Nonequilibrium Charge Carriers Research Articles

The Effect оf Laser Radiation оn Functional Properties of MOS Structures

The electrophysical properties of instrument MOSFET structures (capacitor, field-effect transistor with an isolated gate and an induced channel, CMOS integrated circuit) when exposed to unmodulated laser radiation are studied. Static and dynamic characteristics were measured. The theoretical study was carried out using the developed SPICE models and numerical experiments. An expression is obtained for the volt-ampere characteristic of a field-effect transistor operating in a mode with constant optical illumination. It is shown that the characteristics of the structures are determined by the generation and recombination of nonequilibrium charge carriers, the field effect, the photovoltaic effect in p—n junctions, the photo-Dember effect and tunneling of charge carriers through a gate dielectric. The results of the work are of interest from the point of view of creating high-speed transistors and integrated circuits of a new type.

Kinetics of Carrier Lifetime Degradation in High‐Temperature 1 MeV Electron‐Irradiated Cz n‐Si Associated with the Formation of Divacancy‐Oxygen Defects

Kinetics of degradation of the nonequilibrium charge carrier lifetime (τ) in Czochralski‐grown (Cz) n‐Si irradiated with 1 MeV electrons at different temperatures in the range from 20 to 285 °C are experimentally and theoretically investigated. It is established that changes in τ are qualitatively and quantitatively determined by the temperature of electron irradiation. Analysis of experimental data using the Shockley‐Read‐Hall (SRH) theory shows that the formation of recombinationally active divacancy‐oxygen (V2O) and vacancy‐oxygen (VO) complexes is the main mechanism of τ degradation in this experiment.

Effect of Gamma Irradiation on Electrophysical Parameters of Silicon Solar Cells Doped with Nickel

The results of the studies of changes in the electro-physical parameters (Voc – no-load voltage, Isc – short-circuit current density; τ – lifetime of nonequilibrium charge carriers) of photocells made on plates of monocrystalline silicon of the p-type conductivity with the specific resistance ρ 0.5 Ohm cm, doped with nickel, under irradiation with γ-quanta from 60Co source are presented. It is shown that the efficiency of the solar energy conversion in nickel-doped photovoltaic cells remains higher than in standard cells up to irradiation doses of 108 rad. It was established that with increasing diffusion temperature of nickel atoms radiation stability of electrophysical parameters of photovoltaic cells also increases. A decrease in the concentration of recombination-active radiation defects is due to the getterization by nickel atoms of technological (background) impurities and the action of nickel clusters as effluents for radiation-induced vacancies.

Trap states and carrier diffusion lengths in NiO/β-Ga2O3 heterojunctions

We report the electrical properties, deep trap spectra, and diffusion lengths of non-equilibrium carriers in Ni Schottky diodes and NiO/Ga2O3 heterojunctions (HJs) prepared on the same n−/n+ β-Ga2O3 epi structures. The heterojunctions decrease the reverse current of Ga2O3 high-power rectifiers. In HJs, in contrast to Schottky diodes, the capacitance and AC conductance show a prominent frequency and temperature dependence, suggesting the presence of two temperature activation processes with activation energies of 0.17 and 0.1 eV. The deep trap spectra of the Schottky diodes and HJs differ by the absence in the HJ of deep electron traps E2* with level near Ec − 0.7 eV considered to be an important center of non-radiative recombination. This correlates with the observed increase in the diffusion length of non-equilibrium charge carriers in the HJs to 370 nm compared to 240 nm in the Schottky diodes. The diffusion length of charge carriers in p-NiO was found to be quite short, 30 nm. Possible reasons for the observed differences and possible origin of the minority-trap-like feature commonly reported to be present in the deep level spectra of HJs and also observed in our experiments are discussed.

CHANGES IN THE ELECTROPHYSICAL AND DETECTOR PROPERTIES OF THE PROMISING DETECTOR MATERIAL Cd1-xMnxTe DEPENDING ON THE CONCENTRATION OF IMPURITIES, DEFECTS AND MANGANESE CONTENT

A model study was carried out about the behavior of the resistivity ρ, the Fermi level F, and the charge collection efficiency η of detectors based on the promising semiconductor material Cd1-xMnxTe, depending on the donor impurity concentration ND for different values of the manganese molar fraction x: 0.035, 0.07, and 0.3 at room temperature. The values of concentrations Ni , activation energies Ei , and the capture cross sections σi of nonequilibrium charge carriers by i-th defects acted as input data for modeling. The regularities of changes in ρ, F, η depending on the content of impurities and cadmium vacancies have been established. Methods of achieving a highresistance state, proper for a material of detector-quality, are considered. A plan for further research issues using experimental published results is defined.

Photoemission Enhancement of Plasmonic Hot Electrons by Au Antenna-Sensitizer Complexes.

The photoemission of surface plasmon decay-produced hot electrons is usually of very low efficiencies, hindering the practical utilization of such nonequilibrium charge carriers in harvesting photons with less energy than the semiconductor band gap for more efficient solar energy collection and photodetection. However, it has been demonstrated that the photoemission efficiency of small metal clusters increases as the particle size decreases. Recent studies have also shown that the photoemission efficiency of surface plasmon-yielded hot carriers can be intrinsically improved through proper material construction. In this paper, we report that the photoemission efficiency of hot electrons on the Au nanodisk-cluster complex/TiO2 interface can be dramatically enhanced under optical nanoantenna-sensitizer design. Such an enhancement is dominantly attributed to three factors. First, the large plasmonic nanodisk antennas provide a significantly enhanced optical near field, which largely increases light absorption in the small Au clusters that are acting as hot electron injection sensitizers. Second, the sub-3 nm size of the Au clusters facilitates the collection of delocalized spreading charges by the semiconductor. Third, the hybrid interface and molecule-like energy level of the Au cluster result in a much longer lifetime of excited electrons. Our results provide a promising approach for the effective harvesting of solar energy with plasmonic antenna-sensitizer complexes.

Lateral ambipolar drift of the excess charge carriers in the GaAs-based heterostructures with quantum wells and impurity δ-layers in the adjacent barriers

The low-temperature ambipolar photoconduction in the InGaAs/GaAs and GaAs/AlGaAs heterostructures containing the compositional quantum well (QW) tunnel-coupled with the impurity δ-well have been studied under a wide electric field range. The “stretched” bipolar drift length in the InGaAs/GaAs structure is shown to achieve a few mm at the fields of ∼70 V/cm and exceed that in the GaAs/AlGaAs structure at the comparable field strength by half an order of magnitude. The photoconductivity decay is up to several tens μs long and its behavior is fitted by the single- and “stretched-" exponent functions. The obtained results are shown to be caused by spatial separation of the non-equilibrium charge carriers in the potential profile engineered by such QW configuration and the dispersion law of holes in them.

Trap States and Carrier Diffusion in Czochralski (100) Single Crystal β-Ga2O3

Deep trap spectra and carrier diffusion lengths were measured for unintentionally doped β-Ga2O3 bulk crystals with (100) orientation. The 20-mm diameter, 15-mm length boule was pulled by the Czochralski method from gallium oxide in (010) direction. It is found that the net density of shallow donors in (100) plates cleaved from the crystal was 2.6 × 1017 cm−3, with ionization energies of 0.05 eV measured from admittance spectra. Three deep electron traps with respective ionization energies of 0.6 eV (concentration 1.1 × 1014 cm−3), 0.8 eV (concentration 3.9 × 1016 cm−3) and 1.1 eV (concentration 8.9 × 1015 cm−3) were detected by Deep Level Transient Spectroscopy. The dominant 0.8 eV trap is associated with the E2 centers due to Fe acceptors, the two other traps are the well documented E1 and E3 centers. The major deep acceptors in the lower half of the bandgap have optical ionization threshold of 2.3 eV and concentration of 4 × 1015 cm−3 and are believed to be due to the split Ga vacancies acceptors. The diffusion length of non-equilibrium charge carriers was 90 nm. The electrical properties of these (100) oriented crystals grown by Czochralski are quite similar to those synthesized by the undoped Edge-defined Film-Fed Growth technique.

Spectral (in)dependence of nonequilibrium charge carriers lifetime and density of states distribution in the vicinity of the band gap edge in F8BT polymer

Photoelectric properties of the F8BT polymer are investigated by the Constant photocurrent method (CPM) based on the photocurrent spectra Δjph(hν) and absorption spectra αCPM(hν). The negligibly weak dependence of charge carriers lifetime on the photon energy is found for hν = 2.2–2.7 eV. The peculiarities of the absorption spectra and the photoconductivity spectra are revealed to be determined mainly by the Gaussian distribution of the density of states (DOS). The density of trap states in the F8BT polymer thin films in the exponential DOS is estimated to be 103 times higher than in the Gaussian DOS.

OPTICALLY PUMPED BIPOLAR TRANSISTOR

The properties of a bipolar npn transistor were studied when exposed to unmodulated incoherent radiation created by a “white” LED. The static and dynamic characteristics of the transistor were measured at various exposure intensities. It is shown that the change in the characteristics of the transistor under optical influence is due to an increase in the lifetime of nonequilibrium charge carriers and the photovoltaic effect in p-n junctions. For these reasons, the gain increases, the switching threshold decreases, and the transistor speed increases. The results obtained are applicable both to the creation of high-speed transistors and integrated circuits of a fundamentally new type.

Terahertz photoconductive antennas based on silicon-doped GaAs (111)A

In this study we investigate a relatively new material for terahertz (THz) photoconductive antennas (PCAs): GaAs epitaxial films grown on (111)A-oriented semi-insulated GaAs substrates and doped with Si. GaAs:Si (111)A films with the required high resistance without postgrowth annealing have been grown by molecular-beam epitaxy. The Si doping of (111)A-oriented GaAs was expected to lead to the formation of acceptors that facilitate the activation of As[Formula: see text] traps. The relaxation times of nonequilibrium charge carriers in the films were measured in pump-probe experiment, and, finally, the electron mobility was estimated from the carrier lifetime and current–voltage characteristics measured under pulsed pumping by Ti:sapphire femtosecond laser. Dipole and bow-tie PCAs were fabricated, and the THz emission spectra and the total THz emission power were measured with varying applied voltage and optical excitation power. The properties of GaAs:Si (111)A films and the PCAs based on them are compared with LTG-GaAs (100) and (111)A-oriented films.

The effect of micro-deformations created by illumination on the temperature dependence of the mobility of nonequilibrium non-thermalized charge carriers in media without a center of symmetry

It is shown that the energy of nonequilibrium nonthermalized holes in ZnS crystals with a cubic unit cell does not depend on temperature. The nature of the temperature dependence of the nonequilibrium nonthermalized holes mobility in ZnS crystals depends on the average relaxation time upon scattering by ions and neutral impurity atoms, dislocations, and microstrains.

SЕNSORS BASED ON POLYCRYSTALLINE 3C-SiC: IMPACT OF BORON DOPING

As a chemically inert wide bandgap semiconductor material with high hardness and thermal conductivity, stable electrical characteristics, silicon carbide SiC is attractive for harsh environment electronics and sensors applications. The concept of harsh environment includes extremes of temperature, pressure, shock loads, radiation and chemical attacks those arise in aircraft and automotive engines, industrial gas turbines, during oil and gas exploration, etc.
 Lower growing temperatures of polycrystalline cubic silicon carbide, pc-3C-SiC, compared to monocrystalline allow to significantly reduce its cost and expand the possibilities of application. It follows from previous works that the thermal sensitivity of pc -3C-SiC can be significantly increased by doping with an acceptor impurity of boron during the growth of the material. The purpose of this work is to determine the properties of pc-3C-SiC doped with boron for the creation of photosensors and thermosensors, as well as thermal anemometers for extreme operating conditions.
 It is shown that pс-3C-SiC doping with a boron impurity in the growth process causes the formation of acceptor-type centers in the band gap and the appearance of features in the photosensitivity spectrum, which may be of practical interest for photovoltaics. For temperatures T > 150K, the conductivity of the doped sample increases almost exponentially with an activation energy of 0.28 eV, which is close to the activation energy of the photoconductivity of the same sample. This indicates that the ionization process of equilibrium and non-equilibrium charge carriers occurs from the same impurity centers. Boron doping causes the appearance of a broad photoconductivity band with a maximum at 1.7 eV in the impurity absorption region of pc-3C-SiC, similar to the situation in single crystal 3C-SiC.
 It was determined that the temperature coefficient of resistance for boron-doped pc-3C-SiC is 3.0´10-2 K-1 at T=300K and 1.1´10-2 K-1 at T=700K, which is almost an order of magnitude higher than for thermocouples, as well as for metals from which anemometer threads are made. The discussion of the obtained results allows to associate the value of the activation energy E=0.28 eV with the level of shallow boron in pc-3C-SiC and to assume this center is a point defect containing a boron atom that replaces a silicon atom in the 3C-SiC lattice, i.e. BSi.
 Photosensors that can be used as solar cells in the near-IR range of 0.6 - 1.8 μm, and as photocells in the visible range of 0.4 - 0.6 μm are proposed. The ability of pc-3C-SiC to work in extreme operating conditions, as well as the low cost of device manufacturing technology based on it, compared to other SiC polytypes, allow it to be considered a suitable material for creating temperature sensors, thermo-anemometers and photosensors, as well as detectors for monitoring nuclear facilities.

Relaxation features of own photoconductivity in p-GaSe single crystals

The effects of the electric field, temperature, and initial value of the dark resistivity on the relaxation processes of intrinsic photoconductivity in single crystals of gallium monoselenide (p-GaSe) are studied. It is shown that although in all the samples under study, in the processes of establishment and disappearance of photoconductivity, the process of attachment of nonequilibrium charge carriers by attracting and repulsive centers in weak and stronger electric fields is, accordingly, inevitable, however, in samples of high-resistivity crystals, it is also necessary to take into account the significant influence of random macroscopic defects caused by layering.

Transport and trap states in proton irradiated ultra-thick κ-Ga2O3

Changes induced by irradiation with 1.1 MeV protons in the transport properties and deep trap spectra of thick (>80 μm) undoped κ-Ga2O3 layers grown on sapphire are reported. Prior to irradiation, the films had a donor concentration of ∼1015 cm−3, with the two dominant donors having ionization energies of 0.25 and 0.15 eV, respectively. The main electron traps were located at Ec−0.7 eV. Deep acceptor spectra measured by capacitance-voltage profiling under illumination showed optical ionization thresholds near 2, 2.8, and 3.4 eV. The diffusion length of nonequilibrium charge carriers for ɛ-Ga2O3 was 70 ± 5 nm prior to irradiation. After irradiation with 1.1 MeV protons to a fluence of 1014 cm−2, there was total depletion of mobile charge carriers in the top 4.5 μm of the film, close to the estimated proton range. The carrier removal rate was 10–20 cm−1, a factor of 5–10 lower than in β-Ga2O3, while the concentration of deep acceptors in the lower half of the bandgap and the diffusion length showed no significant change.

Tuning the conductance topology in solids

The inertia of trapping and detrapping of nonequilibrium charge carriers affects the electrochemical and transport properties of both bulk and nanoscopic structures in a very peculiar way. An emerging memory response with hysteresis in the current–voltage response and its eventual multiple crossing, produced by this universally available ingredient, are signatures of this process. Here, we deliver a microscopic and analytical solution for these behaviors, understood as the modulation of the topology of the current–voltage loops. Memory emergence thus becomes a characterization tool for intrinsic features that affect the electronic transport of solids such as the nature and number of trapping sites, intrinsic symmetry constraints, and natural relaxation time scales. This method is also able to reduce the seeming complexity of frequency-dependent electrochemical impedance and cyclic voltammetry observable for a variety of systems to a combination of simple microscopic ingredients.

Fractional Model of Multiple Trapping with Charge Leakage: Transient Photoconductivity and Transit–Time Dispersion

The model of multiple trapping into energy-distributed states is a successful tool to describe the transport of nonequilibrium charge carriers in amorphous semiconductors. Under certain conditions, the model leads to anomalous diffusion equations that contain time fractional derivatives. From this perspective, the multiple-trapping model can be used to interpret fractional transport equations, formulate initial and boundary conditions for them, and to construct numerical methods for solving fractional kinetic equations. Here, we shortly review the application of fractional multiple-trapping equations to problems of transient photoconductivity relaxation and transit–time dispersion in the time-of-flight experiment and discuss the connection of the multiple-trapping model with generalized fractional kinetic equations. Different types of charge leakage are discussed. The tempered fractional relaxation is obtained for recombination via localized states and distributed order equations arise for the non-exponential density of states presented as a weighted mixture of exponential functions. Analytical solutions for photocurrent decay in transient photoconductivity and time-of-flight experiments are provided for several simplified situations.

Collective and Quasi-Local Modes in the Optical Spectra of YB6 and YbB6 Hexaborides with Jahn–Teller Structural Instability

The broad-band reflection spectra of YB6 and YbB6 hexaborides with Jahn–Teller instability of the boron cage have been measured at room temperature. An optical conductivity analysis has revealed, along with the Drude electronic components, heavily overdamped collective modes, which are notable in YB6 for high dielectric contributions, Δε = 2000–5700. The fraction of nonequilibrium charge carriers in YB6, which is at the boundary of structural instability in the hexaboride family, reaches 85–90%, whereas this fraction in doped YbB6 semiconductor is not higher than 25%. It has been shown that unlike the predictions of the topological Kondo insulator model, the surface “metallization” in Yb2+B6 crystals can be explained by additional doping of a surface layer with Yb3+ ions.

Influence of the content of impurities and structural defects on the properties of the Cd0.9Mn0.1Te:V-based detector

The paper highlights the results of quantitative studies of the influence of the content of impurities and structural defects on the electrophysical and detector properties of Cd0.9Mn0.1Te:V — resistivity and concentrations of free charge carriers, life time of nonequilibrium charge carriers τ, charge collection efficiency η. The optimal ranges of energy change and deep donor concentration, which ensure a high-resistive state and acceptable values of τ and η, are established. The authors study the compensation of cadmium vacancies with vanadium admixture.

Influence of the content of impurities and structural defects on the properties of the Cd0.9Mn0.1Te:V-based detector

The paper highlights the results of quantitative studies of the influence of the content of impurities and structural defects on the electrophysical and detector properties of Cd0.9Mn0.1Te:V — resistivity and concentrations of free charge carriers, life time of nonequilibrium charge carriers τ, charge collection efficiency η. The optimal ranges of energy change and deep donor concentration, which ensure a high-resistive state and acceptable values of τ and η, are established. The authors study the compensation of cadmium vacancies with vanadium admixture.