Abstract
The paper highlights the results of quantitative studies of the influence of the content of impurities and structural defects on the electrophysical and detector properties of Cd0.9Mn0.1Te:V — resistivity and concentrations of free charge carriers, life time of nonequilibrium charge carriers τ, charge collection efficiency η. The optimal ranges of energy change and deep donor concentration, which ensure a high-resistive state and acceptable values of τ and η, are established. The authors study the compensation of cadmium vacancies with vanadium admixture.
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