Abstract
A model study was carried out about the behavior of the resistivity ρ, the Fermi level F, and the charge collection efficiency η of detectors based on the promising semiconductor material Cd1-xMnxTe, depending on the donor impurity concentration ND for different values of the manganese molar fraction x: 0.035, 0.07, and 0.3 at room temperature. The values of concentrations Ni , activation energies Ei , and the capture cross sections σi of nonequilibrium charge carriers by i-th defects acted as input data for modeling. The regularities of changes in ρ, F, η depending on the content of impurities and cadmium vacancies have been established. Methods of achieving a highresistance state, proper for a material of detector-quality, are considered. A plan for further research issues using experimental published results is defined.
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