We report on investigations of the temporal evolution of nonequilibrium phonon populations in hydrogenated amorphous silicon held at 1.8 K. Two types of a-Si:H were examined, one grown by plasma enhanced chemical vapor deposition (PE) and one by hot-wire assisted chemical vapor deposition (HW). Phonons were created during the relaxation and recombination of optically excited charge carriers, and detected by means of pulsed anti-Stokes Raman spectroscopy. In the same setup, pulsed luminescence experiments were performed, under identical experimental conditions. The temporal shape of the Raman signals turned out to be determined both by the electronic processes responsible for the phonon generation and by the anharmonic decay of the excited phonon population itself. In the PE films we observed a slowly decaying $(\ensuremath{\gg}100$ ns) contribution to the Raman signal, which was not present in the HW layers. We propose a model to explain this slow background as resulting from laser-induced fast nonradiative recombination of mobile with localized charge carriers. The results of the pulsed luminescence experiments support our model. In addition, phonon decay times were observed to be the same in all samples: decay times of $\ensuremath{\sim}70$ ns were obtained for LA- and TO-like vibrations, whereas TA-like vibrations decayed faster $(<10$ ns) than could be resolved with the experimental setup. We propose that the extreme longevity of the LA and TO phonons is related to the microstructure of amorphous silicon.
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