Abstract
We discuss how to control dc Josephson current by influencing the structure and nonequilibrium population of Andreev levels via external electrostatic gates, current injection and electromagnetic radiation. In particular we will consider the ‘giant’ Josephson critical current in ‘long’ SIS tunnel junctions and the regular and anomalous nonequilibrium Josepson currents in three terminal SNS junctions. We will briefly discuss applications to the Josephson field effect transistor (JOFET) and to the newly invented Josephson interference transistor (JOINT).
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