Analysis of nano sheet field effect transistor based on performance under different temperature and doping concentrations for 12 nm device

Abstract

This paper presents a simulation study on a 12 nm Gate-all-around n-type Metal Oxide Semiconductor (GAA-nMOSFET), investigating the effects of temperature variations and doping concentrations. The structure of the device has three fins, and the channel is surrounded by gate material to reduce the short channel effect (SCE) and electrostatic capacitance. Various parameters such as threshold voltage (Vth), Ion/Ioff ratio, drain-induced barrier lowering (DIBL), and sub-threshold swing (SS) are evaluated at different temperatures 250 K, 300 K, and 350 K, doping concentrations of 1016cm−3, 1017cm−3, and 1018cm−3, with a high voltage of 0.65V. At a temperature of 250 K, in comparison to the 1016cm−3 doping concentration attention, the Vth is observed to be 0.31V, while the Ion/Ioff ratio is measured at 0.33e−14. Moreover, the DIBL experiences a reduction of 25 %, whereas the SS increases by 76 %. Furthermore, when the temperature is raised to 300 K relative to the 1017cm−3 doping concentration, the Vth increases to 0.32 V, and the Ion/Ioff current ratio rises to 0.45e−14. Meanwhile, the DIBL experiences a decrease of 20 %, and the SS increases by 71 %. Finally, at a temperature of 350 K concerning 1018cm−3 doping concentration, the Vth is measured at 0.34 V, and the Ion/Ioff current ratio reaches 0.47e−14 Concurrently, the DIBL shows a decrease of 28 %, While the SS increases to 79 %. To reduce electrostatic capacitance and leakage current, the use of a high-k dielectric material in a GAA-nMOSFET device is investigated. Improved performance traits such as decreased SCE, low DIBL, and strong SS are displayed. Additionally, the connection between threshold voltage and doping concentration is investigated. The effect of temperature variations and doping concentration on many essential characteristics of 12 nm GAA-nMOSFET shows the potential benefits of the device's unique architecture and material. The conclusions are supported through circuit schematics, simulations, and experimental data in this article.