Noise Parameter Extraction Research Articles

Measuring Noise Parameters Using an Open, Short, Load, and λ/8-Length Cable as Source Impedances

Noise parameters are a set of four measurable quantities which determine the noise performance of a radio-frequency device under test. The noise parameters of a 2-port device can be extracted by connecting a set of 4 or more source impedances at the device's input, measuring the noise power of the device with each source connected, and then solving a matrix equation. However, sources with high reflection coefficients cannot be used due to a singularity that arises in entries of the matrix. Here, we detail a new method of noise parameter extraction using a singularity-free matrix that is compatible with high-reflection sources. We show that open, short, load and an open cable ("OSLC") can be used to extract noise parameters, and we detail a practical measurement approach. The OSLC approach is particularly well-suited for low-noise amplifier measurement at frequencies below 1 GHz, where alternative methods require physically large apparatus.

Automatic Bridge Design Parameter Extraction for Scan-to-BIM

Building information modeling (BIM), which can efficiently manage the life cycle of structures, has been increasingly applied in the construction industry. However, it is difficult to implement BIM for existing structures, due to the differences between the design and as-built conditions. Point cloud data (PCD) can be obtained through the scan-to-BIM process, which builds a model based on the current state of the structure. The scan-to-BIM process is complicated for bridge structures and consumes significant time and resources. Therefore, this study developed a system to extract bridge design parameters automatically to reduce the time and resources for the scan-to-BIM process. The proposed automatic bridge design parameter extraction is performed in three steps: (1) noise reduction, (2) 3D transformation, and (3) parameter extraction. The validation test was conducted on the Osong test track fifth bridge in Nojang-ri, Jeondong-myeon, Yeongi-gun, Chungcheongnam-do, Korea. The system developed in this study successfully extracted the design parameters of the bridge from the PCD automatically, resulting in 0.8% error rate.

A Measure of Well-Spread Points in Noise Wave-Based Source Matrix for Wideband Noise Parameter Measurement: The SKA-Low Example

The existence of a figure of merit for measuring the degree of well-spread source points in noise parameter extraction has long been conjectured. This article proposes a measure based on noise waves that is physically motivated and is directly connected to linear algebra through the matrix condition number and/or determinant. The key to this figure of merit is the selection of the noise temperature equation and the removal of singularity due to the $1/(1-|\Gamma _{s}|^{2})$ factor. The result is a well-scaled source matrix with entries bounded within a unit circle. We demonstrate the effectiveness of this measure by extracting the noise parameters of an amplifier in the low-frequency Square Kilometre Array (SKA-Low) band of 50–350 MHz using seven tuner positions. The noise parameters in the 50–100-MHz band are successfully measured despite being below the 100-MHz tuner rating. This outcome is very well predicted by the condition number and the determinant of the source matrix in question.

Cold-Source Noise Measurement of a Differential Input Single-Ended Output Low-Noise Amplifier Connected to a Low-Frequency Radio Astronomy Antenna

We present two methods for measuring the noise temperature of a differential input single-ended output (DISO) Low-Noise Amplifier (LNA) connected to an antenna. The first method is direct measurement of the DISO LNA and antenna in an anechoic chamber at ambient temperature. The second is a simple and low-cost noise parameter extraction of the DISO device using a coaxial long cable. The reconstruction of the DISO noise parameter from the noise wave measurements of the DISO LNA with one terminated input port is discussed in detail. We successfully applied these methods to the Murchison Widefield Array LNA and antenna.

On Impedance-Pattern Selection for Noise Parameter Measurement

Several signal-source impedances (admittances) are required to fully characterize the noise behavior of a linear device. This paper expands the theory of choosing admittances required for noise parameter extraction by finding sets that are guaranteed to form systems of linearly independent equations. A minimal set of four admittances is chosen from four linearly independent admittance regions. Most prior methods require a least-squares solution to noise parameters, using a redundant number of admittances. The proposed method employs a direct solution to the noise parameters using the four admittances. The proposed method also allows adapting the four admittances to overcome signal-source admittance-tuner frequency limitations and/or reducing uncertainty in the minimum noise factor extraction provided approximate knowledge of optimal admittance for minimum noise. The measurement and simulation results demonstrated that the adaptable selection criterion extracted noise parameters well within $3\sigma$ uncertainties of noise parameters found with patterns previously reported in literature. Measurements and theory in this work demonstrate that, in general, absolute reflection coefficients of source admittances do not need to exceed approximately 0.4 but should also be less than 0.9. The flexibility of selecting the signal-source admittances has immediate advantages in accurately determining noise parameters of conditionally stable amplifiers, low-frequency devices operating beyond the tuner specifications, devices operating at high frequencies where tuner losses are high, minimizing measurement time, and cases where available admittances do not encompass regions required by other methods.

A Real-time Auto-detection Method for Random Telegraph Signal (RTS) Noise Detection in CMOS Active pixel sensors

CMOS Active pixel sensors (CMOS APS) are attractive for use in the innermost layers of charged particle trackers, due to their good tradeoffs among the key performances. However, CMOS APS can be greatly influenced by random telegraph signal (RTS) noise, which can cause particle tracking or energy calculation failures. In-depth research of pixels' RTS behavior stimulates the interest of the methods for RTS noise detection, reconstruction and parameters extraction. In this paper, a real-time auto-detection method is proposed, using real-time Gaussian noise standard deviation as the detection threshold. Experimental results show that, compared with current methods using signal standard deviation as the thresholds, the proposed method is more sensitive in multi-level RTS detection and more effective in the case of RTS noise degradation.

On the determination of noise parameters of low‐noise transistor devices

AbstractIn this paper, we discuss the experimental determination of noise parameters for high‐electron‐mobility transistor (HEMT) devices and analyze the problems encountered with conventional extraction techniques. HEMT devices are distinguished by a very small minimum noise figure of only a fraction of a dB, and this minimum noise is accomplished with a source reflection coefficient very close to the edge of the Smith chart. These properties impede a direct experimental determination of the optimum noise impedance by means of a tuner, and it has to be extrapolated from measurements of a large number of tuner states. Common linear regression techniques are found to yield erroneous results and even may fail completely to determine the noise parameters. We develop criteria to check the uncertainty of the result from the linear regression and show that, in general, the result needs to be examined for consistency. The occasional failure of extraction is traced back to a consistency violation in the conditions the elements of the correlation matrix need to satisfy. A new iterative technique is suggested for the extraction of noise parameters that warrants consistency. Moreover, a correction of the receiver gain is found to be necessary to obtain a good reproduction of the measured power patterns by the extracted noise parameters. This fact was attributed to thermal drift of the receiver. Copyright © 2015 John Wiley & Sons, Ltd.

An Extraction of Two-Port Noise Parameters From Measured Noise Powers Using an Extended Six-Port Network

In this paper, we present a formulation for extracting the noise wave correlation matrix of a linear two-port device-under-test (DUT) from measured noise powers using a designed six-port network. The noise powers are measured using a conventional noise figure analyzer. The extracted noise wave correlation matrix can then be converted into conventional two-port noise parameters. The proposed measurement equipment is very simple and leads to a very low cost. The proposed method is experimentally verified through measurements of various DUT samples.

Substrate-Induced Noise Model and Parameter Extraction for High-Frequency Noise Modeling of Sub-Micron MOSFETs

In this paper, a substrate-induced drain-current noise model is developed in addition to the channel thermal noise to explain the non-white-noise characteristic found in the measured drain-current noise in the gigahertz range. The substrate-induced drain-current noise model is derived from the proposed small-signal equivalent circuit with a substrate coupling network and a substrate thermal noise source. The model parameter extraction method utilizing Y-parameter analysis on the proposed small-signal equivalent circuit is demonstrated. The model for the total drain-current noise, the gate-current noise, their cross-correlation, and thereafter the four noise parameters is presented and verified experimentally. Excellent agreement between simulated and measured noise data has been obtained over different dimensions and operating conditions.

Methodology for 1/f noise parameter extraction for high-voltage MOSFETs

This paper proposes a detailed low frequency noise (LFN) parameter extraction method for high-voltage (HV) MOSFETs at low (50mV) and medium (3V) drain biases. In Vd=3V region, noise coming from the channel is dominant while in linear region there is an extra contribution of noise from the drift region part especially for long-channel devices in strong inversion region. Flicker noise of 50V and 20V N- and P-channel HV-MOSFETs was measured over a large current range from weak to strong inversion, making possible the extraction of the noise parameters related to the different noise contributions, such as mobility fluctuations in low current regime, carrier number fluctuations and Coulomb scattering in medium and high current regime. In some cases, series resistance noise contribution especially at high current is apparent as well. The parameter extraction procedure is devised for a recently established charge-based flicker noise model for HV-MOSFETs. Noise parameters related to the carrier number fluctuation effect in the gate oxide extension in drift region are also extracted in high current regime of long-channel devices under low drain bias condition. The frequency exponent AF related to the slope of the measured noise spectra is also extracted. Measurements and analysis include both long as well as short N- and P-channel HV-MOSFETs.

Automated extraction of device noise parameters based on multi-frequency, source-pull data

In this paper a novel approach for determining the four noise parameters of FET devices over frequency is presented. Such methodology is made of two parts: the first one allows to straightforwardly extract single-frequency noise parameters from source-pull data; the second one extends this capability to multi-frequency, source-pull data to obtain a full description of device noise behavior over frequency by means of at most 10 constant parameters (depending on the required accuracy). The whole process is automated via a software routine and does not need a previous knowledge of the FET equivalent circuit's topology, or the values of its elements. This peculiarity makes the proposed method very well suited to quick characterization campaigns of active devices, avoiding the burden of a whole set of prior, different measurements and the relevant, critical extraction procedures, which are strongly dependent on the device.

Transistor Modeling: Robust Small-Signal Equivalent Circuit Extraction in Various HEMT Technologies

Small-signal equivalent circuit (SSEC) models prove indispensable to a broad range of activities, ranging from the understanding of device physics, the analysis of device performance, the characterization and comparison of fabrication processes, the bottom-up construction of large-signal models, the extraction of intrinsic noise parameters, and the design of monolithic microwave integrated circuits (MMICs). Because the SSEC model links the physical structure of the device to its circuit behavior, it allows analysis of the microwave performance as a function of the device geometry. A physically representative model can therefore be used for frequencies extending beyond those of the measurement setup. One must keep in mind that a model is only a physical approximation of a given device, and the more we demand of a model, the more likely we are to expose its various shortcomings. For example, one can stress the limits of a model by extending its frequency range or by applying it to dissimilar technologies; experience shows that with newer material systems, models tend to provide poorer fits to the measured data. In the course of our work, we specifically investigated differences brought about by different materials for devices implemented with a given mask set.

Evaluation of Tuner-Based Noise-Parameter Extraction Methods for Very Low Noise Amplifiers

This paper compares the performance of source-tuner noise-parameter extraction methods used to measure noise parameters of low-noise amplifiers that have very low (1 dB) noise figures. The methods discussed are known as the Cold method and the modified Y -factor method (or Hot-Cold method). The paper describes equations used in the extraction algorithms. In a Monte Carlo analysis by randomly adding various sources of uncertainties to ?measurements,? created with a computer simulation, performances of the noise parameter extraction methods are compared. It is shown that the iterative Cold method and the direct Cold method are the best at extracting Rn and ?opt noise parameters in terms of lowest standard deviation and close proximity of the extracted mean values to the true values. The simplified Cold method, used in a number of commercial systems, has largest systematic offsets in extracted noise parameters while being the quickest to perform. The modified Y-factor method is the slowest to perform due to additional time required for hot measurements. This method is marginally the most accurate to extract F min. These conclusions are also supported with measurement results. This study assembles in one place necessary theoretical background information to serve as a reference for those who are working in the field of noise parameter extraction using tuner-based methods.

Thermal Study of the High-Frequency Noise in GaN HEMTs

The high-frequency noise performance of the GaN HEMT is studied for temperatures between 297-398 K. The access resistances RS and RD have a limiting effect on the noise performance, and in this paper, their temperature dependence is studied in detail for a 2 times 100 mum GaN HEMT. RS and RD show an increase of 0.71 and 0.86 %/K, respectively. The self-heating effect due to dissipated power is also studied to allow accurate intrinsic small-signal and noise parameter extraction. The thermal resistance is measured by infrared microscopy. Based on these results, a temperature dependent noise model including self-heating and temperature-dependent access resistances is derived and verified with measurements.

ACCURACY ISSUES OF ON-WAFER MICROWAVE NOISE MEASUREMENTS

The accuracy issues of on-wafer noise characterization for a linear noisy two-port are presented in this paper. It starts with the description of a microwave noise measurement system and the possible source of error due to the microwave power meter in the measurement system. With the description of noise characterization techniques, this paper reviews a couple of methods for noise parameter extraction to handle the errors in the measured noise powers, noise factors, and source admittances. It also presents the methods to extract the physical noise parameters and to take care of different source admittances in the hot and cold states for accuracy enhancement.

Bipolar Junction Transistor 1/f Noise Simulation and Parameter Extraction Technique

In many cases it is important for practical applications to determine 1/f noise parameters of BJT for SPICE model but their exact values could not be theoretically predicted and must be obtained from the measurements. In this paper error sources in determination of noise parameters from measurement data are discussed. Different bipolar junction transistor noise measurement circuits are analysed using simulation technique to determine the most favourable circuit configuration and bias conditions. Some specific cases and problems related to noise parameter extraction are discussed. Ill. 8, bibl. 8 (in English; summaries in Lithuanian, English and Russian).

Direct extraction of InP HBT noise parameters based on noise-figure measurement system

A new method for the determination of the four noise parameters of an InP double heterojunction bipolar transistor (DHBT) based on a 50-/spl Omega/ noise measurement system without a microwave tuner is presented. The noise parameters are determined based on the noise correlation matrix technique by fitting the measured noise figure of the active device. On-wafer experimental verification up to 20 GHz is presented and a comparison with a tuner based method is given. Good agreement is obtained between measured and calculated results up to 20 GHz for the InP/InGaAs DHBT with a 1.6/spl times/20 /spl mu/m/sup 2/ emitter over a wide range of bias points.

Static and low frequency noise characterization in surface- and buried-mode 0.1 μm PMOSFETS

In this work, static and low frequency noise parameter extraction are carried out on surface- and buried-mode 0.1 μm PMOSFETs. The two architectures are based either on a surface mode of operation (SC) or on a buried one (BC) featuring P+ and N+ polygate, respectively. The impact of the gate architecture i.e. P+ and N+ polysilicon, on the static and noise parameters is analyzed. The 1/ f noise, which can be interpreted in terms of carrier number fluctuations, is found to be about one decade lower for buried-mode devices. The statistical sample-to-sample dispersion of the noise level has also been studied and found to be as large as 4–5 decades for the nominal area devices. Standard RTS analysis has also been performed on representative PMOS devices.

Material and device characterization using a correlation spectrum analyzer

The paper presents the possibilities offered by the Correlation Spectrum Analyzer in the characterisation of semiconductor materials and microelectronic devices. The instrument performs noise analysis in a frequency range from a few mHz to 1MHz with an extraordinary sensitivity of 1fA/√Hz in current noise measurements and of 20pV/√Hz in voltage noise measurements. Noise spectra taken in these conditions can be used as a non-destructive-sensitive probe to investigate physical properties of semiconductor materials as well as quantify the noise produced by new devices. As an example of these applications, the text reports on the extraction of noise parameters from a MOSFET operated in strong sub-threshold regime to be inserted in noise models for circuit simulation and on the determination of carrier mobility in single-crystal cadmium telluride (CdTe) samples.