Noise Figure Of Amplifier Research Articles

Exploring Design Tradeoffs and Rate Gain Regions in Full-Duplex Wireless Communications

Conventional HD wireless networks operated by using distinct time slots or frequency (freq.) sub-bands for transmission and reception within the same family. Therefore, the wireless research community aims to develop FD operation to enable simultaneous transmission along with reception inside a single time/ freq. channel. This research aims to conduct an analytical investigation of the conditions under which real FD systems may attain higher data rates compared to analogous HD systems. The primary obstacle in real FD systems is to the uncancelled self-interference (SI) signal, which arises due to a confluence of hardware along with implementation defects. First, provide a signal model that encompasses the impact of notable impairments, including oscillator phase noise (PN), along with low-noise amplifier (LNA) noise figure, along with mixer noise, along with analog-to-digital converter quantization noise. The rate gain area (RGA) is examined in this research using the comprehensive signal model. A~1.2x to ~1.4x that of HD systems for short-range applications like class-3 Bluetooth. To get the same rate gain with Class-1 Bluetooth, −70dB in-band PN must be paired with 50dB passive SI suppression.

High efficient net gain and low noise figure based vertical cavity semiconductor optical amplifiers for wavelength division multiplexing applications

Abstract This paper has demonstrated the high efficient net gain and low noise figure based vertical cavity semiconductor light amplifiers for wavelength division multiplexing applications. Previous study on the chip reflective gain variations versus SOA current under temperature effects is clarified. We have transferred light semiconductor amplifiers for wavelength multiplexing schemes applications. Amplifier output power is demonstrated with bias current and amplifier active layer region length variations based input signal power of 3, 6.5, 10 dBm, 1550 nm wavelength and optimum amplifier confinement factor of 0.45. The amplifier output noise variations are clarified against the bias current and amplifier active layer region width variations based input signal power of 3, 6.5, 10 dBm, 1550 nm wavelength and optimum amplifier confinement factor of 0.45. The output OSNR variations are studied clearly and deeply against the bias current and amplifier active layer region length variations based input signal power of 3, 6.5, 10 dBm, 1550 nm wavelength and optimum amplifier confinement factor of 0.45. The signal loss is demonstrated versus both active layer width/length and temperature based optimum 30 % gallium core dopant ratio and 28 % arsenide cladding dopant ratio at optimum input signal power of 10 dBm, 1550 nm wavelength and optimum amplifier confinement factor of 0.45. SOA amplifier output power can be enhance with the management of both bias current and input signal power and the reduction of active amplifier length. The amplifier output noise can be enhance with the management of both bias current and input signal power and the reduction of active amplifier width. Output OSNR system can be improved with the management of both bias current and input signal power and the reduction of active amplifier length. The SOA amplifier gain can be improved with the management of both bias current and input signal power and the reduction of active amplifier length. The SOA amplifier noise figure can be improved with the management of both bias current and input signal power and the reduction of active amplifier width. The signal loss can be controlled and managed by adjusting optimum 30 % gallium core dopant ratio and 28 % arsenide cladding dopant ratio, optimum active layer/with and the presence of room temperature.

Experimental investigation on the internal stress of bismuth-doped fiber and its effect on the noise figure of Bismuth-doped fiber amplifier.

The noise figure (NF) of a fiber amplifier is one of the key measures of amplification performance, which characterizes the quality of the amplified signal. Residual stresses are inevitably generated during the manufacturing process of optical fibers, and this can lead to changes in the refractive index (RI) distribution of the fiber. Further, the change in RI distribution causes the mode-field characteristics of the fiber to change as well, and this ultimately has an impact on the NF performance of the amplifier. However, until now, there have been fewer studies on the effect of residual stress on the NF of the fiber amplifiers. In this work, we took a commercial single-mode bismuth-doped fiber (BDF) as an example and used a self-developed stress test device to measure its residual stress and refractive index distribution and compare it with that of a passive fiber. We also comprehensively compared the distribution of residual stress and refractive index of the fiber at different pump powers and pump wavelengths. Finally, we performed numerical simulations of the bismuth-doped fiber amplifier (BDFA) based on the BDF under the theoretical mode field area and BDF after the expansion of the mode field area due to stresses to compare the NF performance. The results demonstrate that: the entire cross-section (core and cladding) of the BDF exhibits tensile stress (>0 MPa), where the residual stress at the core of the BDF is nearly 9.8 MPa higher than that of the passive fiber; The residual stress makes the mode-field area of the BDF expand by 26.7% compared with the theoretical values, which ultimately makes the NF of the BDFA rise from 4.6 dB to 4.7 dB; The stress at the BDF core is exacerbated by pump excitation, where it is elevated by about 26% and 5% compared to vacancy at 1240 nm and 1310 nm pumps, which is most likely attributed to thermal effects. Therefore, it is necessary to consider the effect of residual stresses in the fabrication of optical fibers to better achieve the radius of the expected indicators. This work contributes to the better development of O-band BDFAs, especially for pre-simulation of the actual performance of BDFAs with a practical reference.

Low-noise phase-sensitive optical parametric amplifier with lossless local pump generation using a digital dither optical phase-locked loop.

The low noise figure of phase-sensitive amplifiers (PSAs) is attractive for optically pre-amplified measurement and communication systems. However, a major practical implementation difficulty pertains to the requirement of phase-locked signal, idler, and pump waves. Previously, injection locking to a co-propagating weak pump pilot or tapping portions of the received signal (lossy) for carrier re-generation have been used. Here we present a novel, lossless approach without any pump pilot, that generates a phase-locked receiver-local pump within the PSA using a digital dither-based optical phase-locked loop. We experimentally demonstrate a 2 dB noise figure with a low 0.3 dB penalty due to imperfect locking. By comparing the phase-locking performance in a PSA to that in a 50/50-coupler, we discuss and predict potential performance improvements connected to loop delay and laser phase characteristics.

On the Coupling Imbalance of the UWB BLC in the 5G Low Noise Amplifier Design

In this article, the design and the development of ultra-wideband UWB branch-line couplers BLCs with a novel method to control the coupling imbalance are proposed. The proposed UWB BLC is suitable for the 5G low-noise amplifier (LNA) design. UWB 4-branch BLC is designed using design curves developed using even and odd mode analyses to cover the 5G (3.3-5 GHz) frequency bands. The vertical branches of the UWB BLC are replaced by modified ones, and their effect on the coupling imbalance is investigated. The proposed BLC occupies an area of 33.9 × 15.7 mm2 Both conventional and modified BLC are fabricated, and their measured S-parameters are compared with analytical and simulated models. Based on the balanced amplifier topology, a 5G UWB low-noise amplifier is designed. The proposed BLCs and the MGF3022AM InGaP-HBT (Heterojunction Bipolar Transistor) are used to produce acceptable UWB performance. The balanced amplifier return loss, noise figure, and gain are investigated as BLCs coupling imbalance varies. The ultra-wideband LNA exhibits an acceptable small-signal gain, noise figure, input return loss, and output return loss across the 5G different frequency bands.

A 24–30-GHz 256-Element Dual-Polarized 5G Phased Array Using Fast On-Chip Beam Calculators and Magnetoelectric Dipole Antennas

We present a 24–30-GHz 256-element dual-polarization transceiver (TRX) phased array based on a 16-element beamformer integrated circuit (BF-IC), 2-element frequency conversion integrated circuit (FC-IC), liquid crystal polymer (LCP)-based combiners and filters, and a tileable package with 64 embedded dual-polarized (dual-pol) antennas. The phased array presented in this work overcomes three key challenges in current 5G millimeter-wave (mmWave) antenna arrays: 1) it supports a dramatic increase in the number of supported fast-access beams; 2) it offers improved power efficiency; and 3) it provides a path to lower solution cost. 1) We enable fast switching among >30000 beams—orders of magnitude improvement over prior work—by employing an on-chip beam calculator in the BF-IC, achieving 200-ns beam setup and 8-ns over-the-air (OTA)-switching time. 2) We enable a module-level transmitter (TX) mode peak power added efficiency (PAE) of 20% using a modular architecture that preserves power amplifier (PA) linearity and efficiency as well as receiver (RX) mode low noise amplifier (LNA) noise figure (NF). The module achieves Psat effective isotropically radiated power (EIRP) of 68.5 dBm and BF-IC NF < 3.9 dB. 3) We lower the solution cost by enabling a wider steering range to reduce the number of phased arrays required in a sectorized coverage scheme, by reducing the IC and package area, and by avoiding calibration. The wider steering range is enabled by using an in-package magnetoelectric dipole antenna (for the first time in silicon-based phased arrays), resulting in steering over ±70° in H- and V-pol in both E- and H-planes without requiring any calibration. Moreover, the module achieves >20-dB cross-polarization isolation across the entire ±70° beam steering range.

A 21–41-GHz Common-Gate LNA With TLT Matching Networks in 28-nm FDSOI CMOS

A wideband common-gate (CG) cascode low-noise amplifier (LNA) is demonstrated with a 28-nm fully depleted silicon on insulator (FDSOI) CMOS process. Wide bandwidth is achieved with a CG structure in the first stage and tightly coupled ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$k=0.86$ </tex-math></inline-formula> ) transmission line transformer (TLT) matching networks. A gm-boosting technique with cross-coupled capacitors improves the gain and noise figure (NF) of the CG amplifier. A high-input 1-dB gain compression point (IP1 dB) can be achieved by introducing an inter-stage inductor at the second-stage cascode amplifier. The LNA shows 19.3 dB gain, 3.1 dB NF, 19.8 GHz (63%) of 3 dB bandwidth, and −15.7 dBm IP1 dB at 28 GHz.

Benefits of counterpropagating Raman amplification for multiband optical networks

Multiband (MB) optical fiber transmission systems can unlock additional capacity in existing optical fiber infrastructures, enabling them to keep up with the increase in traffic demand while postponing costly optical fiber deployments. However, due to the worse transmission characteristics of MB systems than C-band-only transmission, the network’s overall spectral efficiency decreases when increasing the transmission bandwidth. The extent of this performance degradation is paramount to determining the commercial viability of deploying MB systems. By estimating the generalized signal-to-noise ratio using the GNPy library, this work analyzes the impact of using counterpropagating Raman amplification to improve the performance of an S + C + L -band transmission system comprising a total bandwidth of 15.5 THz. Raman amplification is proposed to mitigate the worse system performance resulting from the stimulated Raman scattering effect and the worse noise figure of the S-band optical amplifier. We show that the optimized deployment of a counterpropagating Raman pump makes it possible not only to improve but also to equalize the network-wide optical performance of the S + C + L -band transmission system, which potentially reduces the complexity of routing and wavelength assignment algorithms. The capacity, spectral efficiency, and number of feasible lightpaths of the S + C + L -band system are compared with C- and C + L -band systems with and without Raman amplification on two reference networks. Results show that the spectral efficiency of the S + C + L -band system with Raman amplification is similar to the C-band-only system without Raman amplification. These results provide evidence that this strategy can be effectively used to compensate for the worse transmission characteristics of MB systems, the higher noise figure of the S-band optical amplifier, the SRS effect, and the additional losses from the band demultiplexer and coupler required at every amplification stage to separate the transmission bands. Overall, the simulation results highlight that a single optical fiber can approximately carry the same data when using a 15.5 THz transmission band (and Raman amplification) as three parallel fibers using C-band-only transmission (without Raman amplification).

Models and Programs of the Gain and Noise Figure of the Nd-doped Fiber Amplifier in 1.7-1.8μm Band

This paper gives an introduction and research results on the Nd-doped fiber amplifier. We have constructed calculation models and programs of the Gain and Noise Figure with changing pump power, signal power, number of doped ions per unit volume, and fiber length using MATLAB. When the pump power or ion concentration increases, or the signal power decreases, the Gain has an increasing trend as presented in the research results. The Gain reaches a maximum when the fiber length is 1.35m. The Noise Figure decreases with increasing signal power or decreasing ion concentration. It reaches a minimum with a high pump power and a fiber length of 1.4m.

Low-Noise Integrated Phase-Sensitive Waveguide Parametric Amplifiers

Low-noise optical amplifiers play a vital role in optical communications and signal processing. Recently, there has been a pursuit for compact, waveguide-based, parametric amplifiers which employ the four-wave mixing process relying on the 3 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rd</sup> order nonlinearity, χ <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">(3)</sup> , of the material. Here, we present an analytic model for the gain and noise figure of phase-sensitive parametric amplifiers based on nonlinear optical waveguides, which includes the impact of the linear loss of the waveguide. We provide insights into the importance of this loss for the gain, but more importantly also for the amplifier noise figure. In particular, we study waveguides based on Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> and find that a gain of 28 dB with a 0.8 dB noise figure is feasible in a 3 m long waveguide having a loss of 1.5 dB/m. We finally investigate the impact of the Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> waveguide cross section on the dispersion and the nonlinear coefficient for the improvement of PSA performance.

Quasiballistic electron transport in cryogenic SiGe HBTs studied using an exact, semi-analytic solution to the Boltzmann equation

Silicon–germanium heterojunction bipolar transistors (HBTs) are of interest as low-noise microwave amplifiers due to their competitive noise performance and low cost relative to III–V devices. The fundamental noise performance limits of HBTs are thus of interest, and several studies report that quasiballistic electron transport across the base is a mechanism leading to cryogenic non-ideal IV characteristics that affect these limits. However, this conclusion has not been rigorously tested against theoretical predictions because prior studies modeled electron transport with empirical approaches or approximate solutions of the Boltzmann equation. Here, we study non-diffusive transport in narrow-base SiGe HBTs using an exact, semi-analytic solution of the Boltzmann equation based on an asymptotic expansion approach. We find that the computed transport characteristics are inconsistent with experiments, implying that quasiballistic electron transport is unlikely to be the origin of cryogenic non-ideal IV characteristics. Our work helps to identify the mechanisms governing the lower limits of the microwave noise figure of cryogenic HBT amplifiers.

Comparison of 1480 nm and 980 nm-pumped Gallium-Erbium fiber amplifier.

Background: One way to reduce the length of the gain medium in Erbium-Doped Fiber Amplifier (EDFA) is by doping the fiber core with a high concentration of Erbium. However, this method caused ion clustering effects, which limits the EDFA's efficiency. In this research, the use of Gallium as a new co-dopant in erbium-doped silica fiber is explored. Methods: The new fiber, namely Gallium co-doped Erbium fiber (Ga-EDF), is used as a gain medium in an optical fiber amplifier setup. A 2-meter length of the Ga-EDF fiber was used in a single pass configuration with a forward pumping scheme at 150 mW pump power. The Ga-EDF amplifier's gain and noise figure while pumping at 980 nm and 1480 nm were compared. The amplifier's performance was evaluated as the input signal power varied between -30 dBm to 3 dBm, over the wavelength range of 1520 nm to 1580 nm. Results: The 980 nm-pumped Ga-EDF amplifier achieved the maximum small-signal gain of 22.45 dB and the corresponding noise figure of 5.71 dB at the input signal wavelength of 1535 nm. Meanwhile, the 1480 nm-pumped Ga-EDF amplifier attained the maximum small-signal gain of 20.83 dB and the corresponding noise figure of 5.09 dB at the input signal wavelength of 1550 nm. At the input signal power below -20 dBm and the wavelength range 1520 nm to 1547 nm, the Ga-EDF performs better when pumped at 980 nm. Their performance is comparable at the input signal wavelength range between 1547 nm to 1580 nm. At the input signal power above -20 dBm, the 1480 nm-pumped Ga-EDF outperformed the 980 nm-pumped amplifier. Conclusions: The overall performance indicates that the gain saturation point of the 1480 nm-pumped amplifier is higher than the 980 nm-pumped.

Novel Design Charts for Optimum Source Degeneration Tradeoff in Conjugately Matched Multistage Low-Noise Amplifiers

Source degenerative feedback is extensively applied in the low-noise amplifier design. The beneficial effects of this technique are well established in the open literature. However, the designer is often left to trial-and-error or optimization procedures to identify the adequate amount of feedback when other linear requirements, such as signal matching, come into play. This issue is even more relevant in multistage designs. In this article, we present a synthesis procedure and the relevant design chart to identify the optimum feedback inductor value on all transistors of an $N$ -stage amplifier to obtain a perfect match at its external ports in conjunction with amplifier noise figure minimization and a specified gain requirement. It is shown that the method is applicable to arbitrary $N$ values although it becomes more elaborate for $N$ greater than 6. The method is deterministic as opposed to optimization or trial-and-error-based procedures. The design flow is illustrated at first through a four-stage design with ideal matching elements and subsequently validated by an monolithic microwave integrated circuit (MMIC) test vehicle designed and realized in the WIN foundry’s Gallium Arsenide PIH1-10 process. The measured performance of the test vehicle is NF = 1.9 dB, 26 dB gain, typical I/O return loss of 15 dB in the 26.5–29.5-GHz bandwidth, and practically ideal behavior at the design frequency of 28 GHz.

Comparison of 1480 nm and 980 nm-pumped Gallium-Erbium fiber amplifier

Background: One way to reduce the length of the gain medium in Erbium-Doped Fiber Amplifier (EDFA) is by doping the fiber core with a high concentration of Erbium. However, this method caused ion clustering effects, which limits the EDFA’s efficiency. In this research, the use of Gallium as a new co-dopant in erbium-doped silica fiber is explored. Methods: The new fiber, namely Gallium co-doped Erbium fiber (Ga-EDF), is used as a gain medium in an optical fiber amplifier setup. A 2-meter length of the Ga-EDF fiber was used in a single pass configuration with a forward pumping scheme at 150 mW pump power. The Ga-EDF amplifier's gain and noise figure while pumping at 980 nm and 1480 nm were compared. The amplifier's performance was evaluated as the input signal power varied between -30 dBm to 3 dB, over the wavelength range of 1520 nm to 1580 nm. Results: The 980 nm-pumped Ga-EDF amplifier achieved the maximum small-signal gain of 22.45 dB and the corresponding noise figure of 5.71 dB at the input signal wavelength of 1535 nm. Meanwhile, the 1480 nm-pumped Ga-EDF amplifier attained the maximum small-signal gain of 20.83 dB and the corresponding noise figure of 5.09 dB at the input signal wavelength of 1550 nm. At the input signal power below -20 dBm and the wavelength range 1520 nm to 1547 nm, the Ga-EDF performs better when pumped at 980 nm. Their performance is comparable at the input signal wavelength range between 1547 nm to 1580 nm. At the input signal power above -20 dBm, the 1480 nm-pumped Ga-EDF outperformed the 980 nm-pumped amplifier. Conclusions: The overall performance indicates that the gain saturation point of the 1480 nm-pumped amplifier is higher than the 980 nm-pumped.

Analysis and mitigation of noise in simultaneous transmission and reception in MRI.

In simultaneous transmission and reception (STAR) MRI, along with the coupling of the excitation pulse to the received signal, noise, and undesired distortions (spurs) coming from the transmit chain also leak into the acquired signal and degrade image quality. Here, properties of this coupled noise and its relationship with the transmit amplifier gain, transmit chain noise density, isolation performance, and imaging bandwidth are analyzed. It is demonstrated that by utilizing a recently proposed STAR technique, the transmit noise can be reduced. The importance of achieving high isolation and careful selection of the corresponding parameters are demonstrated. A cancellation algorithm, together with a vector modulator, is used for transmit-receive isolation. The scanner is modeled as a pipeline of blocks to demonstrate the noise contribution from each block. With higher isolation, coupled transmit noise can be reduced to the point that the dominant noise source becomes acquisition noise, as in the case for pulsed MRI. Amplifiers with different gain and noise properties are used in the experiments to verify the derived noise-transmit parameter relation. With the proposed technique, more than 80 dB isolation in the analog domain is achieved. The leakage noise and the spurs coupled from the transmit chain, are reduced. It is shown that the transmit gain plays the most critical role in determining sufficient isolation, whereas the amplifier noise figure does not contribute as much. The transmit noise and the spurs in STAR imaging are analyzed and mitigated by using a vector modulator.

Generalised expression of the noise figure of phase sensitive amplifiers for an arbitrary number of modes

Phase sensitive amplifiers (PSA), contrary to usual phase insensitive amplifiers (PIA), are in principle capable to achieve noiseless amplification, i.e. exhibit a quantum-limited noise figure (NF) of 0 db. When implemented using four-wave mixing (FWM) in a non-linear fibre, extra waves can be generated by undesired FWM processes, which may introduce extra input ports for vacuum fluctuations, thus potentially degrading the NF. In this situation, we give here a general analytical quantum derivation of the PSA NF, valid for an arbitrary number of nonlinearly coupled modes. This expression is usable as soon as a linear input-output relation can be found for the annihilation and creation operators of the involved modes. It predicts that the noise level depends on the number of interacting waves. We illustrate the usefulness of this expression in the case of six waves, corresponding to four interacting quantum modes. In this example the signal NF is degraded by 0.4 db, compared to 10 db obtained for PIA operation of the same scheme.

"Analytical Model of Pulse Amplification in Erbium Doped Fiber Amplifier "

"Doping a part of the optical fiber core by (Er3+ ) ions in presence of external pumping power will lead to form the erbium-doped fiber amplifier (EDFA).The performance of this optical amplifier depends on (the power and the wavelength of the pumping laser, the power and wavelength of the input signal, amplifier length, ion concentration). These parameters will affect the characteristics of EDFA such as amplifier gain, gain saturation, noise figure and output power. However, these characteristics can be determined by solving the EDFA propagation and rate equations. The solution of these equations of two-level laser medium can be done numerically. In this paper, we are proposed a novel method to solve these equations. The reconstructed results are perfectly coincided the well known numerical results.

A 0.02–4.5-GHz LN(T)A in 28-nm CMOS for 5G Exploiting Noise Reduction and Current Reuse

In this article, a new noise reduction/cancellation technique is proposed to improve noise figure (NF) of a broadband low-noise transconductance amplifier (LNTA) for 5G receivers. The LNTA combines a common-gate (CG) stage for wideband input matching and a common-source (CS) stage for canceling the noise and distortion of the CG stage. Yet, another noise reduction is applied to reduce the channel thermal noise of the noise cancellation stage itself. The technique further exploits current reuse and increases transconductance of the CS transistor while keeping its power consumption low. Fabricated in 28-nm CMOS, the proposed LNTA is capable of driving an external 50-Ω load and achieves a NF of 2.09-3.2 dB and input return loss (S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sub> ) better than -10 dB over the 3-dB bandwidth of 20 MHz-4.5 GHz while consuming 4.5 mW from a single 1-V power supply. The achieved gain (S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">21</sub> ) and IIP3 are 15.2 dB and -4.6 dBm, respectively.

Impact of AlGaN/GaN Interface and Passivation on the Robustness of Low-Noise Amplifiers

Poststress dc characteristics of AlGaN/GaN HEMTs can be used to study the effect of high-power stress on the noise figure (NF) and gain of low-noise amplifiers (LNAs) subjected to large input overdrives. This enables a shift from circuit- to transistor-level measurements to investigate the impact of variations in HEMT design parameters on the robustness (including both recovery time and survivability) by mimicking LNA operation. Using this method, a tradeoff between survivability and recovery time is demonstrated for different AlGaN/GaN interface profiles (sharp interface, standard interface, and AlN interlayer). Furthermore, the impact of different surface passivation schemes (Si-rich, Si-poor, and bilayer SiN x ) on robustness is investigated. The bilayer passivation, which features low leakage current and small gain compression under overdrive stress, exhibits relatively weak survivability. The mechanisms influencing the robustness are analyzed based on transistor physics. The short recovery time is mainly due to impeding the injection of hot electrons into surface traps and high reverse current, whereas the survivability is dependent on the local or global peak electrical fields around the gate under high power stress.

Compact Dual-Band Antenna Module for Glonass/GPS GNSS Receivers

A compact dual-band navigation antenna module, consisting of a planar patch antenna element and a two-channel low-noise amplifier with input protection elements, is proposed. The two-channel scheme for constructing the low-noise amplifier is implemented with the use of two duplex filters, which are calculated by the method of oriented graphs. The patch antenna element is realized in a topology that allows it to be excited at the fundamental resonant mode TM10 both in the lower (L2) and upper (L1) frequency bands, which ensures the identity of the radiation pattern shapes in both frequency bands. The design of the antenna module, the equivalent circuit, the VSWR against frequency, the gain against frequency, the radiation patterns at the central frequencies of the L1 and L2 ranges of the antenna element, the gain and noise figure of the low-noise amplifier against frequency, and the radiation pattern of the entire module are presented.