Abstract
Abstract This paper has demonstrated the high efficient net gain and low noise figure based vertical cavity semiconductor light amplifiers for wavelength division multiplexing applications. Previous study on the chip reflective gain variations versus SOA current under temperature effects is clarified. We have transferred light semiconductor amplifiers for wavelength multiplexing schemes applications. Amplifier output power is demonstrated with bias current and amplifier active layer region length variations based input signal power of 3, 6.5, 10 dBm, 1550 nm wavelength and optimum amplifier confinement factor of 0.45. The amplifier output noise variations are clarified against the bias current and amplifier active layer region width variations based input signal power of 3, 6.5, 10 dBm, 1550 nm wavelength and optimum amplifier confinement factor of 0.45. The output OSNR variations are studied clearly and deeply against the bias current and amplifier active layer region length variations based input signal power of 3, 6.5, 10 dBm, 1550 nm wavelength and optimum amplifier confinement factor of 0.45. The signal loss is demonstrated versus both active layer width/length and temperature based optimum 30 % gallium core dopant ratio and 28 % arsenide cladding dopant ratio at optimum input signal power of 10 dBm, 1550 nm wavelength and optimum amplifier confinement factor of 0.45. SOA amplifier output power can be enhance with the management of both bias current and input signal power and the reduction of active amplifier length. The amplifier output noise can be enhance with the management of both bias current and input signal power and the reduction of active amplifier width. Output OSNR system can be improved with the management of both bias current and input signal power and the reduction of active amplifier length. The SOA amplifier gain can be improved with the management of both bias current and input signal power and the reduction of active amplifier length. The SOA amplifier noise figure can be improved with the management of both bias current and input signal power and the reduction of active amplifier width. The signal loss can be controlled and managed by adjusting optimum 30 % gallium core dopant ratio and 28 % arsenide cladding dopant ratio, optimum active layer/with and the presence of room temperature.
Published Version
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