A 21–41-GHz Common-Gate LNA With TLT Matching Networks in 28-nm FDSOI CMOS

Abstract

A wideband common-gate (CG) cascode low-noise amplifier (LNA) is demonstrated with a 28-nm fully depleted silicon on insulator (FDSOI) CMOS process. Wide bandwidth is achieved with a CG structure in the first stage and tightly coupled ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$k=0.86$ </tex-math></inline-formula> ) transmission line transformer (TLT) matching networks. A gm-boosting technique with cross-coupled capacitors improves the gain and noise figure (NF) of the CG amplifier. A high-input 1-dB gain compression point (IP1 dB) can be achieved by introducing an inter-stage inductor at the second-stage cascode amplifier. The LNA shows 19.3 dB gain, 3.1 dB NF, 19.8 GHz (63%) of 3 dB bandwidth, and −15.7 dBm IP1 dB at 28 GHz.