The time-resolved photoelectric spectroscopy technique was used for the characterizationof semi-insulating CdTe:V crystals using a short light pulse with 9 ns durationfrom a nitrogen laser (337.1 nm). The stationary monochromatic illumination ofcrystals let us measure the time-resolved photocurrent caused by the detrapping ofthe electrons photogenerated by the pulse laser excitation. The dependence ofthe intensity of pulse photocurrent on the energy of additional monochromaticillumination in the photorefractive CdTe:V crystals with the delay timetd = 5 ns, which corresponds to its maximum value, was investigated. The spectral dependence ofpulse photocurrent produced by the detrapping process of electrons in CdTe:Vcrystals was measured under different intensities of the applied electric field. Itis shown that the additional illumination at leads to the increase of the photocurrent intensity caused by the detrapping processes ofelectrons from impurity centres and intrinsic defects. The nature of the electron traps inCdTe:V was determined.