Aluminum nitride (AlN) ceramics are becoming cutting-edge materials for electronic information and communication. However, raw AlN hydrolyzed rapidly, and the high storage costs of this material prevent widespread application. In this study, raw AlN was modified by boric acid (H3BO3) at 30 °C to enhance hydrolysis resistance. Transmission electron microscope (TEM), X-ray diffraction (XRD), the magic angle spinning nuclear magnetic resonance (27Al-MAS-NMR and 11B-MAS-NMR), and the fourier transform infrared spectrometer (FTIR) were used to characterize the powder before and after treatment, and the mechanism of hydrolysis resistance was determined. Modification with 0.1 M boric acid did not change the crystal phase of the AlN particles. The modified powder did not hydrolyse at 90% humidity and 70° Celsius. In the presence of boric acid, a network structure of B–O–B linkages ([BOn], n = 3 or 4) formed that was connected to the AlN core via chemical bonds of B–N–Al and B–O–Al. The protective 6 – 10 nm-thick layer that formed on the surface of the AlN crystal, prevented attack by water molecules and hindered the hydrolysis of aluminium nitride. This study provides an alternative means of preparing anti-hydrolysis AlN powders.