Nitride-based Light-emitting Diodes Research Articles

Light-Field Optimization of Deep-Ultraviolet LED Modules for Efficient Microbial Inactivation

Public awareness of preventing pathogenic microorganisms has significantly increased. Among numerous microbial prevention methods, the deep-ultraviolet (DUV) disinfection technology has received wide attention by using the nitride-based light-emitting diode (LED). However, the light extraction efficiency of DUV LEDs and the utilization rate of emitted DUV light are relatively low at the current stage. In this study, a light distribution design (referred to as the reflective system) was explored to enhance the utilization of emitted DUV from LEDs, leading to successful and efficient surface and air disinfection. Optical power measurements and microbial inactivation tests demonstrated an approximately 79% improvement in average radiation power density achieved by the reflective system when measured at a 5 cm distance from the irradiation surface. Moreover, a statistically significant enhancement in local surface disinfection was observed with low electric power consumption. The reflective system was integrated into an air purifier and underwent air disinfection testing, effectively disinfecting a 3 m3 space within ten minutes. Additionally, a fluorine resin film at the nanolevel was developed to protect the light module from oxidation, validated through a 1200 h accelerated aging test under humid conditions. This research offers valuable guidance for efficient and energy-saving DUV disinfection applications.

The impact of laser lift-off with sub-ps pulses on the electrical and optical properties of InGaN/GaN light-emitting diodes

Laser lift-off (LLO) is an important step in the processing chain of nitride-based light-emitting diodes (LEDs), as it enables the transfer of LEDs from the growth substrate to a more suitable carrier. A distinctive feature of LLO with ultrashort pulses is the ability to use either above- or below-bandgap radiation, since nonlinear absorption becomes relevant for ultrashort pulses. This study addresses the differences in the absorption scheme for below- and above-bandgap radiation and investigates the electrical and optical properties of InGaN/GaN LEDs before and after LLO with 347 and 520 nm laser light via current–voltage and power- as well as temperature-dependent photoluminescence measurements. LLO could be successfully realized with both wavelengths. The threshold fluence required for LLO is about a factor of two larger for 520 nm compared to that for 347 nm. Furthermore, an increase in leakage current by several orders of magnitude and a significant decrease in efficiency with laser fluence are observed for below-bandgap radiation. In contrast, leakage current hardly increases and efficiency is less dependent on the laser fluence for samples lifted with 347 nm. This degradation is ascribed to the absorption of laser light in the active region, which facilitates a modification of the local defect landscape. The effect is more severe for below-bandgap radiation, as more laser light penetrates deep into the structure and reaches the active region. Ultimately, we show that LEDs lifted with ultrashort laser pulses can exhibit good quality, making ultrashort pulse LLO a viable alternative to conventional LLO with nanosecond pulses.

Bidirectional light-emitting diode as a visible light source driven by alternating current

Gallium nitride-based light-emitting diodes have revolutionized the lighting market by becoming the most energy-efficient light sources. However, the power grid, in example electricity delivery system, is built based on alternating current, which raises problems for directly driving light emitting diodes that require direct current to operate effectively. In this paper, we demonstrate a proof-of-concept device that addresses this fundamental issue – a gallium nitride-based bidirectional light-emitting diode. Its structure is symmetrical with respect to the active region, which, depending on the positive or negative bias, allows for the injection of either electrons or holes from each side. It is composed of two tunnel junctions that surround the active region. In this work, the optical and electrical properties of bidirectional light emitting diodes are investigated under direct and alternating current conditions. We find that the light is emitted in both directions of the supplied current, contrary to conventional light emitting diodes; hence, bidirectional light-emitting diodes can be considered a semiconductor light source powered directly with alternating current. In addition, we show that bidirectional light-emitting diodes can be stacked vertically to multiply the optical power achieved from a single device.

Modulation of localized phonon thermal transport at GaN/AlxGa1-xN heterointerface: Polar surface, doping, and compressive Strain

The phonon transport processes within a few atomic layers near heterointerfaces play a crucial role in thermoelectric applications such as nitride-based high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs). However, a systematic investigation of their localized transport characteristics remains unexplored. This article employs the Interfacial Phonons method based on first-principles calculations to extract interface phonon information for GaN/AlxGa1-xN heterostructures. Molecular dynamics simulations are utilized to compare the phonon behaviors between Ga-face and N-face GaN-based heterointerfaces. The research extensively investigates the dependence of interfacial thermal transport on the concentration of Al atoms under ordered substitutional doping and the strength of uniaxial compressive strain. The research revealed that both Ga-face and N-face GaN/AlxGa1-xN heterointerfaces exhibit phonon branch drift. The differences in charge distribution at the polar surfaces lead to varying degrees of Brillouin zone distortion. The vibrational modes of the atoms at the N-face GaN interface are more compact and localized than those of Ga-face GaN, resulting in a stronger degree of localization for the optical phonon branches. When varying the doping concentration of Al atoms, some phonon branches at the GaN interface appear outside the band structure of the intrinsic bulk and surface states, exhibiting strong localized characteristics. The introduction of Al atoms at the heterointerface induces additional phonon scattering, and the lattice vibration mismatch between Al and Ga atoms results in a non-uniform residual stress field at the interface, further enhancing phonon-interface scattering. Moderate compressive strain-induced lattice distortion promotes the overlapping of phonon modes at the interface, allowing some localized phonons to serve as interface transport modes. This optimization enhances phonon transport at the heterointerface. This research provides valuable insights into a comprehensive understanding of interfacial thermal transport in GaN-based semiconductors. Moreover, it offers useful theoretical guidance for thermal management through the manipulation of phonon wave properties.

Dopant concentrations analysis on electro-optic performances of gallium nitride-based ultraviolet light-emitting diode chip

Dopant concentrations analysis on electro-optic performances of gallium nitride-based ultraviolet light-emitting diode chip

Topology-induced chiral photon emission from a large-scale meron lattice

AbstractMerons are a class of topologically protected particle-like structures created in in-plane magnetized magnetic films. The structures can act as information carriers and could be used for magnetic storage. However, the development of such applications is hampered by limitations in the size, thermal stability and magnetic-field requirements of the systems. Here we report the construction of millimetre-scale meron lattices that are stable at room temperature and under zero magnetic field. Our system is based on a trilayer structure composed of a thin iron film sandwiched between films of palladium and magnesium oxide (Pd/Fe/MgO) on a gallium nitride wafer. It is fabricated using a molecular-beam epitaxy approach that is assisted by a high magnetic field, which leads to a strong Dzyaloshinskii–Moriya interaction. The lattices can be used for chirality transfer from merons to electrons and then to photons, and we show that the meron lattices can be used as spin injectors in nitride-based light-emitting diodes. The topology-induced spin light-emitting diode can provide 22.5% circularly polarized electroluminescence at room temperature and under zero magnetic field.

Gallium nitride-based resonant cavity light-emitting diode with single-longitudinal-mode emission.

A novel, to the best of our knowledge, gallium nitride (GaN)-based resonant cavity light-emitting diode (RCLED) with single-longitudinal-mode light emission was demonstrated. A Ta2O5/SiO2 dielectric distributed Bragg reflector (DBR) with a filter-film structure was adopted as the top mirror. In contrast to the flat-topped reflectivity spectrum of the conventional high-reflective-structure DBR, for this filter-film-structure DBR, there is a light-transmitting concave band on the reflectivity spectrum. Owing to the modulation effect of this band on the output light, a single-longitudinal-mode light emission with a full width at half maximum as low as 0.63 nm was realized. Furthermore, the novel RCLED exhibited better wavelength stability. With an increase in the injection current from 50 to 500 mA, the redshift of the emission peak was only 0.2 nm. This novel RCLED with ultra-narrowband emission has a high potential for application in optical communication systems and optical fiber sensing applications.

High Luminous Efficacy Phosphor-Converted Mass-Produced White LEDs Achieved by AlN Prebuffer and Transitional-Refraction-Index Patterned Sapphire Substrate.

Constant advance in improving the luminous efficacy (ηL) of nitride-based light-emitting diodes (LEDs) plays a critical role for saving measurable amounts of energy. Further development is motivated to approach the efficiency limit for this material system while reducing the costs. In this work, strategies of using thin AlN prebuffer and transitional-refraction-index patterned sapphire substrate (TPSS) were proposed, which pushed up the efficiency of white LEDs (WLEDs). The AlN prebuffer was obtained through physical vapor deposition (PVD) method and TPSS was fabricated by dry-etched periodic silica arrays covered on sapphire. Devices in mass production confirmed that PVD AlN prebuffer was able to improve the light output power (φe) of blue LEDs (BLEDs) by 2.53% while increasing the productivity by ~8% through shortening the growth time. Additionally, BLEDs on TPSS exhibited an enhanced top ηext of 5.65% in contrast to BLEDs on the conventional PSS through Monte Carlo ray-tracing simulation. Consequently, φe of BLEDs was experimentally enhanced by 10% at an injected current density (Jin) of 40 A/cm2. A peak ηL of 295.2 lm/W at a Jin of 0.9 A/cm2 and the representative ηL of 282.4 lm/W at a Jin of 5.6 A/cm2 for phosphor-converted WLEDs were achieved at a correlated color temperature of 4592 K.

Neutron irradiation effects on gallium nitride-based blue LEDs

Gallium nitride (GaN) is a promising material for radiation-hardened electronics in outer space environment. This work focuses on radiation hardness evaluation of GaN device using commercial GaN quantum-well light-emitting diodes (LEDs). Both the electrical and optical properties of GaN LEDs were characterized before and after neutron irradiation. The light emission intensity was found to increase significantly after 1014n/cm2 of neutron irradiation in the Ohio State University Research Reactor (OSURR) at room temperature. The extracted values from the I-V curve after irradiation also demonstrate such optical improvements of the GaN LED after 1014n/cm2 of neutron irradiation.

Perspective on light-fidelity and visible light communication

Visible light communication (VLC) is an exciting research area. VLC offers a significantly greater spectrum than radio frequency and is ideal for data communication. In VLC, the visible light spectrum, from 400 to 700 nm, is used for both lighting and communication. Gallium nitride-based light-emitting diodes (LEDs) and laser diodes are the optical sources in visible light communications. Laser diodes have an advantage over LEDs in visible light communication. VLC has applications in underwater communication, vehicle-to-vehicle communications, among others.

Analytical models of electron leakage currents in gallium nitride-based laser diodes and light-emitting diodes.

The electrical-to-optical power conversion efficiencies of the light-emitting devices based on gallium nitride (GaN) are seriously limited by electron leakage currents due to the relatively low mobility and activation ratio of holes. However, there have been few theoretical models on the behavior of the leakage current with an increasing total current. We develop an Ohmic-law-like method to describe the transport behaviors of the systems with electron and hole currents simultaneously. Based on reasonable assumptions, the ratio of the leakage current to the total current is related to the differential resistances of the devices. Through the method, we develop analytical models of the leakage currents in GaN-based laser diodes (LDs) and light-emitting diodes (LEDs). The ratios of the leakage currents with total currents in LDs and LEDs are shown to increase, which explains the sublinear behaviors of the luminescence-current (LI) curves of the devices. The theory agrees well with the numerical simulation and experimental results in larger current ranges in comparison to the traditional ABC model. The above analytical model can be used to fast evaluate the leakage currents in GaN-based LDs and LEDs.

Review of Low-Frequency Noise Properties of High-Power White LEDs during Long-Term Aging.

Low-frequency noise investigation is a highly sensitive and very informative method for characterization of white nitride-based light-emitting diodes (LEDs) as well as for the evaluation of their degradation. We present a review of quality and reliability investigations of high-power (1 W and 3 W) white light-emitting diodes during long-term aging at the maximum permissible forward current at room temperature. The research was centered on the investigation of blue InGaN and AlInGaN quantum wells (QWs) LEDs covered by a YAG:Ce3+ phosphor layer for white light emission. The current-voltage, light output power, and low-frequency noise characteristics were measured. A broadband silicon photodetector and two-color (blue and red) selective silicon photodetectors were used for the LED output power detection, which makes it possible to separate physical processes related to the initial blue light radiation and the phosphor luminescence. Particular attention was paid to the measurement and interpretation of the simultaneous cross-correlation coefficient between electrical and optical fluctuations. The presented method enables to determine which part of fluctuations originates in the quantum well layer of the LED. The technique using the two-color selective photodetector enables investigation of changes in the noise properties of the main blue light source and the phosphor layer during the long-term aging.

III-Nitride Light-Emitting Devices

III-nitride light-emitting devices have been subjects of intense research for the last several decades owing to the versatility of their applications for fundamental research, as well as their widespread commercial utilization. Nitride light-emitters in the form of light-emitting diodes (LEDs) and lasers have made remarkable progress in recent years, especially in the form of blue LEDs and lasers. However, to further extend the scope of these devices, both below and above the blue emission region of the electromagnetic spectrum, and also to expand their range of practical applications, a number of issues and challenges related to the growth of materials, device design, and fabrication need to be overcome. This review provides a detailed overview of nitride-based LEDs and lasers, starting from their early days of development to the present state-of-the-art light-emitting devices. Besides delineating the scientific and engineering milestones achieved in the path towards the development of the highly matured blue LEDs and lasers, this review provides a sketch of the prevailing challenges associated with the development of long-wavelength, as well as ultraviolet nitride LEDs and lasers. In addition to these, recent progress and future challenges related to the development of next-generation nitride emitters, which include exciton-polariton lasers, spin-LEDs and lasers, and nanostructured emitters based on nanowires and quantum dots, have also been elucidated in this review. The review concludes by touching on the more recent topic of hexagonal boron nitride-based light-emitting devices, which have already shown significant promise as deep ultraviolet and single-photon emitters.

Antibiofilm and cytotoxic effect of 3,3′-dihydroxycurcumin (DHC) as photosensitizer agent in antimicrobial photodynamic therapy for endodontic purposes

BackgroundCurcuminoids have been designed not only to improve chemical and metabolic stability of curcumin (CUR), but also to increase its antimicrobial activity, without effecting its ability as photosensitizer agent in antimicrobial photodynamic therapy (aPDT) with light emitting diode (LED). This study evaluated the antimicrobial and antibiofilm action of curcumin analog DHC (or 3,3′-dihydroxycurcumin), submitted or not to LED irradiation, on microorganisms of endodontic importance and its influence on fibroblasts viability. MethodsDHC was synthetized by modified Pablon's methodology and the experiments were conducted under irradiation or not with indium gallium nitride-based LED (440-480nm, 100 mW/cm2, 0.78 cm2,60 s). The antimicrobial activity of CUR and DHC were determined by the Minimum Inhibitory and Bactericidal Concentration assays against Gram-positive and Gram-negative bacteria and the effect of both compounds on fibroblast viability was tested using colorimetric assays. They were also evaluated on 72h and 7days single-species biofilms and on 14 days multispecies biofilms formed inside dentin tubules by bacterial colonies counts and confocal microscopy, respectively. Data were analyzed statistically considering p<0.05. ResultsDHC had bactericidal effect against all bacteria tested higher than CUR, in planktonic conditions. CUR and DHC (at 39 and 19 μg/mL, respectively) were cytocompatible and LED irradiation reduced fibroblast viability, regardless of compound. CUR and DHC reduced the growth of single-species biofilms and the effect of aPDT was bacteria dependent. DHC reduced more than 70% of microorganisms from multispecies biofilms, superior to CUR effect. ConclusionsDHC showed low cytotoxicity and antibiofilm effect similar to curcumin, when submitted or not to aPDT, and could be further explored as a bioactive compound for endodontic purposes.

Observation of Acoustic Charge Transport in GaN-Based Quantum Well Structures Under Surface Acoustic Wave Excitations.

Though the acoustoelectric and acoustooptic interactions have been widely studied on III-V semiconductors, most studies were conducted at low temperature to avoid the influence of lattice scattering. Here, we demonstrate larger-than-1-GHz optical oscillation and acoustic charge transport at room temperature from a nitride-based LED (light-emitting diode) by acoustic wave excitation. The optical oscillation is generated by the harmonics of acoustic waves, while the acoustic transport of carriers was observed from the LED light output at different acoustic excitation frequencies. Furthermore, with the change of bias voltage, the frequency response of light output varies correspondingly due to the thermal disturbance that affects the lattice vibration and acoustic wave propagation. The results also suggest that we are able to achieve a tunable optical resonant frequency by varying bias voltages without changing the LED structure.

Enhanced Heat Dissipation in Gallium Nitride-Based Light-Emitting Diodes by Piezo-phototronic Effect.

As a new generation of light sources, GaN-based light-emitting diodes (LEDs) have wide applications in lighting and display. Heat dissipation in LEDs is a fundamental issue that leads to a decrease in light output, a shortened lifespan, and the risk of catastrophic failure. Here, the temperature spatial distribution of the LEDs is revealed by using high-resolution infrared thermography, and the piezo-phototronic effect is proved to restrain efficaciously the temperature increment for the first time. We observe the temperature field and current density distribution of the LED array under external strain compensation. Specifically, the temperature rise caused by the self-heating effect is reduced by 47.62% under 0.1% external strain, which is attributed to the enhanced competitiveness of radiative recombination against nonradiative recombination due to the piezo-phototronic effect. This work not only deepens the understanding of the piezo-phototronic effect in LEDs but also provides a novel, easy-to-implement, and economical method to effectively enhance thermal management.

A review of high ideality factor in gallium nitride-based light-emitting diode

Theory concerning the high ideality factor of gallium nitride (GaN) based light- emitting diode (LED) has been reviewed. The presence of a high ideality factor indicates a large forward voltage that results in efficiency reduction. The paper suggests that tunneling is the main reason defining the exponential behaviour of current-voltage measurements, which leads to a high ideality factor. However, there is also a paper that suggests that the design of current geometry in the LED chip defines the value of ideality factor. An effective current spreading geometry in the LED chip will minimize the ideality factor and make it fall between the ideal range of 1 to 2. Besides, how the ideality factor is calculated will also play a major role in defining its value. By calculating the ideality factor based solely on the radiative recombination current formula, the value of ideality factor can result in an ideal ideality factor of 1.08.

Heavily Si-doped pulsed sputtering deposited GaN for tunneling junction contacts in UV-A light emitting diodes

We report the characteristics of heavily Si-doped GaN prepared by pulsed sputtering deposition (PSD) and its application as tunneling junction (TJ) contacts for nitride-based light-emitting diodes (LEDs). We determined that the use of PSD allows us to grow extremely heavily Si-doped wurtzite GaN epitaxial layers with [Si] = 1.0 × 1021 cm−3 on commercially available UV-A LED wafers. Then, we processed these samples into LED structures to investigate their device characteristics as TJ-contact LEDs. Compared to commercially available UV-A LEDs with transparent conductive oxide contacts, TJ-contact LEDs with [Si] = 1.0 × 1021 cm−3 at the tunnel-junction interface showed lower differential resistance and, consequently, worked well under a high injection current density of ∼1 kA/cm2 without any degradation. These results indicate that PSD-grown heavily doped n-type GaN is promising for application as a TJ-contact in group III nitride-based optoelectronic devices.

Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction.

Nitride-based light-emitting diodes (LEDs) are well known to suffer from a high built-in electric field in the quantum wells (QWs). In this paper we determined to what extent the electric field is screened by injected current. In our approach we used high pressure to study this evolution. In LEDs with a narrow QW (2.6 nm) we found that even at a high injection current a large portion of built-in field remains. In LEDs with very wide QWs (15 and 25 nm) the electric field is fully screened even at the lowest currents. Furthermore, we examined LEDs with a tunnel junction in two locations - above and below the active region. This allowed us to study the cases of parallel and antiparallel fields in the well and in the barriers.

Passivation to Improve the Efficiency and Reliability of III-Nitride Micro-Light-Emitting Diode

Because group III-V and nitride-based micro light-emitting diodes (micro-LEDs) exhibit excellent performance, such as fast response, low power consumption, and thermal stability, they have been widely applied for display and biomedical applications, including optogenetics and multi-site neuron. However, unlike conventional LEDs (> 300 × 300 µm2), micro-LEDs (> 100 × 100 µm2) suffer from severe Shockley Read-Hall (SRH) non-radiative recombination, which is related to sidewall damage introduced by ICP-RIE dry-etching process for LED isolation. As the size of LEDs decreases, such non-radiative recombination phenomenon increases due to the increase in the sidewall surface ratio. Many attempts have been made to improve such defect-related recombination in micro-LEDs. In other words, sidewall passivation using dielectric materials was reported to be effective in alleviation sidewall-related leakage characteristics.In this study, we investigated the electrical and optical properties of GaN-based micro-LEDs (blue) as a function of the number of passivation layers. The passivation layers were deposited using plasma enhanced chemical vapor deposition (PECVD) or/and atomic layer deposition (ALD). It is shown that by employing combined deposition techniques of ALD and PECVD, the optical and electric performance of 10 µm-size micro-LEDs are significantly improved. Compared with the conventional PECVD passivation method, the combined ALD/PECVD passivation showed the smaller ideality factor. For the 10 µm-size micro-LEDs, maximum external quantum efficiency (EQE) was obtained at 35 A/cm2 when the stacked ALD/PECVD passivation layer was used, whereas it was attained at 79 A/cm2 when the PECVD passivation was used. Based on the emission microscopy results, leakage paths were observed. The results show that the use of stacked ALD/PECVD passivation layer could serve as a potentially important process for the fabrication of high-performance micro-LEDs (< 10 × 10 µm2).