Abstract
Gallium nitride (GaN) is a promising material for radiation-hardened electronics in outer space environment. This work focuses on radiation hardness evaluation of GaN device using commercial GaN quantum-well light-emitting diodes (LEDs). Both the electrical and optical properties of GaN LEDs were characterized before and after neutron irradiation. The light emission intensity was found to increase significantly after 1014n/cm2 of neutron irradiation in the Ohio State University Research Reactor (OSURR) at room temperature. The extracted values from the I-V curve after irradiation also demonstrate such optical improvements of the GaN LED after 1014n/cm2 of neutron irradiation.
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