NiFe Layer Research Articles

Crystal structure and exchange bias of Ni-Mn-based films

Crystal structure and hysteresis properties of Ni-Mn/FeNi-based films are studied with respect to the composition of the Ni-Mn layer, annealing conditions, temperature, and the presence of an auxiliary layer. The exchange bias is confirmed to originate from the pinning effect of the antiferromagnetic γ-NiMn (A1 fcc) or θ-NiMn (L10 fct) phases formed in the Ni-Mn layer through the epitaxial growth on the seed layer or due to the annealing, respectively. The composition range of Ni-Mn and annealing temperatures providing the formation of the antiferromagnetic phases are determined, as well as their influence on temperature dependences of the exchange bias field and coercivity of the FeNi layer.

Magnetic Properties of Exchange-Coupled Fe-Ni/Fe22Ni78 Double-Layered Thick Films

We prepared exchange-coupled Fe-Ni/Fe22Ni78 double-layered thick films ( $24~\mu \text{m}$ in thickness) using an electroplating method and evaluated their soft magnetic properties. The total Fe content of the double-layered films was varied by the change in the Fe content in Fe-Ni layer, and the coercivity was evaluated. The double-layered films with the same layer thickness ( $12~\mu \text{m}$ for Fe-Ni layer and $12~\mu \text{m}$ for Fe22Ni78 one) showed lower coercivity compared with the single-layered Fe-Ni films. To confirm the effect of the exchange coupling between both layers, we changed the layer thickness for the Fe22Ni78 magnetic phase from 1 to $12~\mu \text{m}$ , keeping at $24~\mu \text{m}$ of the total film thickness. The coercivity of the double-layered films was dramatically decreased with increasing the layer thickness of the Fe22Ni78 phase from 1 to $6~\mu \text{m}$ . This result suggests that the exchange coupling works effectively to reduce the coercivity of the Fe-Ni phase when the Fe22Ni78 layer thickness is $> 6~\mu \text{m}$ . Consequently, we increased the saturation magnetization without the increase in the coercivity and concluded that the use of the exchange coupling is one of the attractive methods to prepare soft magnetic materials with good magnetic properties.

Modulation of iron–nickel layers composition by an external magnetic field

In this article, characterization of FeNi layers deposited on a Cu plate for variable magnetic field arrangement is shown. Layers were prepared using a simple electrodeposition process, from an aqueous solution of Fe2+ and Ni2+ sulfate salts containing boric acid, an iron activator. By application of variation of current values, times, and external magnetic field orientations, the resultant film quality was examined and the efficiency of the embedded elements was investigated. The studies show differences in the coating morphology and relative composition of ferromagnetic metals (Ni, Fe) electrodeposited on a not ferromagnetic (paramagnetic) metal (Cu). The obtained layers were investigated by Scanning Electron Microscopy and Energy Dispersive X-ray Spectroscopy.

Density functional and Monte Carlo investigation of FeNi/MoS2 junction

In this paper, first principles computations are performed to investigate structural, electronic, magnetic, and thermodynamic properties of a novel two-dimensional ferromagnet/semiconductor junction, consisting of a monolayer of FeNi on a single monolayer of ${\mathrm{MoS}}_{2}$. After investigating more than 30 different arrangements of Fe and Ni atoms on ${\mathrm{MoS}}_{2}$, it is concluded that Ni-S bonding is more likely at the FeNi/${\mathrm{MoS}}_{2}$ interface, while highly spin polarized Fe atoms prefer to stay well above the ${\mathrm{MoS}}_{2}$ monolayer, forming a zigzag FeNi layer at the surface. Accurate investigation of the electronic structure of the most stable configuration of FeNi/${\mathrm{MoS}}_{2}$ junction evidences appearance of some majority and minority surface charge carriers with very different mobilities, predicting a high spin polarized conductivity in the junction. Tens of different spin orderings are applied to the FeNi monolayer in a $3\ifmmode\times\else\texttimes\fi{}3$ supercell to achieve reliable Heisenberg exchange constants for parametrization of the magnetic energy of the FeNi/${\mathrm{MoS}}_{2}$ junction. The obtained exchange constants are then used for classical Monte Carlo simulation of magnetic thermodynamic properties of the system, including magnetic order parameter, heat capacity, and magnetic susceptibility. The predicted very high paramagnetic transition temperature ($g1300\phantom{\rule{0.28em}{0ex}}\text{K}$) along with the speculated high spin polarized conductivity evidences potential application of this junction in spintronics.

Improving the magnetodynamical properties of NiFe/Pt bilayers through Hf dusting

We investigate the effect of hafnium (Hf) dusting on the magnetodynamical properties of NiFe/Pt bilayers using spin-torque-induced ferromagnetic resonance measurements on 6 μm wide microstrips on high-resistive Si substrates. Based on two series of NiFe(tNiFe)/Hf(tHf)/Pt(5) stacks, we first demonstrate that the zero-current magnetodynamic properties of the devices benefit from Hf dusting: (i) the effective magnetization of the NiFe layer increases by 4%–8% with Hf present and (ii) the damping α decreases linearly with tHf by up to 40%. The weaker anisotropic magnetoresistance (AMR ≃ 0.3%–0.4%) of the 3 nm NiFe series is largely unaffected by the Hf, while the stronger AMR of the 5 nm NiFe series drops from 0.7% to 0.43% with increasing tHf. We find that the spin Hall efficiency ξSH is independent of the NiFe thickness, remaining unaffected (ξSH = 0.115) up to tHf = 0.4 nm and then decreasing linearly for higher tHf. The different trends of α and ξSH suggest that there is an optimum Hf thickness (≃0.4 nm) for which the threshold current for auto-oscillation should have a minimum, while the much lower damping should improve mutual synchronization. Our results also indicate that the spin-orbit torque is entirely damping-like with no field-like torque component. Finally, the internal spin Hall angle of Pt is estimated to be θSH = 0.22 by calculating the transparency of the interface.

Time domain magnetization dynamics study to estimate interlayer exchange coupling constant in Nd-Fe-B/Ni80Fe20 films

Interlayer exchange coupling (Jex) between a hard magnetic Nd-Fe-B layer and a soft magnetic Ni80Fe20 layer is studied by means of time-resolved magneto-optical Kerr effect (TRMOKE) microscope. Whereas a single 16 nm thick Nd-Fe-B layer without Ni80Fe20 showed high coercivity of μ0Hc = 2 T and resonance frequency of fr = 161 GHz at external bias magnetic field of μ0Hb = 2 T due to the high anisotropy field, those of the bi-layer Nd-Fe-B (16 nm)/Ni80Fe20 (5 nm) are dramatically reduced to μ0Hc = 1.34 T and fr = 74.4 GHz. When the Nd-Fe-B and Ni80Fe20 are separated by a 1 nm thick non-magnetic Mo layer, by contrast, the coercivity recovered partially to μ0Hc = 1.9 T but the frequency further reduced to fr = 63.4 GHz. We derived Jex based on a simple macrospin model, whose value reduced from 3.9 ± 0.1 mJ/m2 for the bi-layer without the Mo layer to 0.1 ± 0.1 mJ/m2 with the Mo layer. The reduction in Jex suggested that the interlayer exchange decoupling between the Nd-Fe-B and the Ni80Fe20 layers was responsible to the recovery of μ0Hc and the reduction of fr by the insertion of the non-magnetic layer. We successfully estimated the interlayer exchange coupling constant in the hard/soft magnetic bilayer system by TRMOKE and macrospin-modeling, which had been previously difficult because of its high anisotropy and high coercivity. This method is applicable also to the quantitative estimation of the intergranular exchange coupling.

Magnetoelectric Spin Wave Modulator Based On Synthetic Multiferroic Structure

We describe a spin wave modulator – spintronic device aimed to control spin wave propagation by an electric field. The modulator consists of a ferromagnetic film serving as a spin wave bus combined with a synthetic multiferroic comprising piezoelectric and magnetostrictive materials. Its operation is based on the stress-mediated coupling between the piezoelectric and magnetostrictive materials. By applying an electric field to the piezoelectric layer, the stress is produced. In turn, the stress changes the direction of the easy axis in the magnetostrictive layer and affects spin wave transport. We present experimental data on a prototype consisting of a piezoelectric [Pb(Mg1/3Nb2/3)O3](1-x) –[PbTiO3]x substrate, and 30 nm layer of magnetostrictive Ni film, where the film is attached to a 30 nm thick Ni81Fe19 spin wave bus. We report spin wave signal modulation in Ni81Fe19 layer by an electric field applied across the piezoelectric layer. The switching between the spin wave conducting and non-conducting states is achieved by applying ±0.3 MV/m electric field. We report over 300% modulation depth detected 80 μm away from the excitation port at room temperature. The demonstration of the spin wave modulator provides a new direction for spin-based device development by utilizing an electric field for spin current control.

Anomalous optical nonreciprocity in magnetic nanoisland arrays

We study the phenomenon of optical nonreciprocity in multilayer systems of magnetic nanoislands [FeNi–Al2O3]N. An anomalously large optical nonreciprocity was observed in these systems. The effect was manifested in nonequivalence of polarization plane rotation of reflected light for the sample in an initial position and rotated by . We assume that the super-vortex magnetization in the FeNi layers is responsible for the optical nonreciprocity effect. It was found that the value of nonreciprocity effect depends on the effective thickness of FeNi island layer and reaches a maximum with the super-vortex magnetization formation. The nonreciprocity magnitude is significantly higher than the values observed recently in systems of specially formed magnetic nanoparticles. Nonreciprocity magnitude is strongly dependent on interlayer interaction between nanoisland layers at large distances.

Tuning Ni Surfaces for Enhanced Oxygen Evolution Reaction in Alkaline pH

Mixed-metal oxide (MMO) films consisting of Ni-Fe and Ni-Co-Fe were investigated as electrocatalysts for the oxygen evolution reaction (OER) under alkaline conditions.[1] High surface area Ni-Fe-Co films on a Raney nickel support were produced by using aniline as a capping agent to optimize the catalyst morphology. The Raney nickel support provides excellent catalyst dispersion which results in high-active site utilization. This catalyst shows enhanced mass activity when compared to other Ni-Fe OER electrocatalysts.[2-4] Cyclic voltammetry of binary MMO catalysts shows changes in the Ni2+/3+ transitions in films containing Fe or Co. In-situ X-ray absorption spectroscopy (XAS) analysis verifies the hypothesis that Fe stabilizes Ni in the 2+ oxidation state while Co facilitates oxidation to the 3+ state. The enhancement of the OER from the Ni-Fe-Co catalyst is a result of two effects (1) the presence of Co effectively “shrinks” the Ni and Fe local geometry resulting in an optimized Fe-OH/OOH bond strength and (2) the formation of a conductive NiIIIOOH phase at a lower overpotential as a result of charge transfer effects from Co. This conductive phase activates Fe sites which are inaccessible to electron transfer in the nonconductive NiII(OH)2 lattice. Heat treatment studies of films at 400 oC in the presence of air show an improvement the OER activity of the Ni-Fe-Co catalyst but deactivates the Ni-Fe. This presentation will entail detailed correlation of electrochemical data (RDE and single cell) with in situ spectroscopy obtained using Raman and Synchrotron x-ray absorption. Acknowledgements: The authors gratefully acknowledge the financial support of the Department of Energy (DOE) via Energy Efficiency and Renewable Energy (EERE), under the auspices of an incubator effort lead by Proton On-Site and a new grant (DE-EE0006958 ) under the HydroGen initiative. Authors also acknowledge the support from arpa.e under their open initiative via a grant lead by Pajarito Powders, Albuquerque (DE-AR0000688). The support from (DOE) office of science under contract no DE-SC0012704 for building and maintaining the National Synchrotron Light Source-II (NSLS-II) at Brookhaven National Laboratory (BNL), Upton, NY and Thermo Fisher for instrumental support is gratefully acknowledged. References Bates, M.K., et al., Charge-Transfer Effects in Ni–Fe and Ni–Fe–Co Mixed-Metal Oxides for the Alkaline Oxygen Evolution Reaction. ACS Catalysis, 2016. 6(1): p. 155-161.Song, F. and X. Hu, Exfoliation of layered double hydroxides for enhanced oxygen evolution catalysis. Nature communications, 2014. 5.Gong, M., et al., An Advanced Ni–Fe Layered Double Hydroxide Electrocatalyst for Water Oxidation. Journal of the American Chemical Society, 2013. 135(23): p. 8452-8455.Tang, D., et al., Carbon Quantum Dot/NiFe Layered Double-Hydroxide Composite as a Highly Efficient Electrocatalyst for Water Oxidation. ACS Applied Materials & Interfaces, 2014. 6(10): p. 7918-7925.

Giant Enhancement in Rashba Spin‐Seebeck Effect in NiFe/p‐Si Thin Films

The spin‐Seebeck effect mediated thermoelectric energy conversion can provide an efficient alternative to traditional thermoelectrics for waste heat recovery. To achieve this goal, efficient spin to charge conversion using earth‐abundant materials is essential. Proximity induced Rashba effect arises from the charge potential mediated by structural inversion asymmetry, which has been reported in Si thin films and can be manipulated by controlling the thickness of Rashba layer. We demonstrate a giant Rashba spin‐Seebeck effect in NiFe/p‐Si (polycrystalline) bilayer thin films. The bilayer thin film specimens have p‐Si layer thickness of 5, 25, and 100 nm while keeping the NiFe layer thickness at 25 nm. The Rashba spin‐Seebeck coefficient has been estimated to be μV K−1 for 100 nm p‐Si, and increases by an order of magnitude to μV K−1 for 5 nm p‐Si. The measured spin‐Seebeck coefficient in 5 nm p‐Si specimen is one of the largest coefficients ever reported. The measured voltage of 100.3 μV is one of the largest reported spin‐Seebeck voltages, with smallest area of ≈160 × 10 μm2 used in any spin‐Seebeck measurement. This scientific and technological breakthrough using earth abundant elements brings the spin mediated thermoelectric energy conversion for waste heat recovery closer to reality.

Collective magnetic response of inhomogeneous nanoisland FeNi films around the percolation transition

By using superconducting quantum interference device (SQUID) magnetometry, we investigated anisotropic high-field (H ≲ 7T) low-temperature (10 K) magnetization response of inhomogeneous nanoisland FeNi films grown by rf sputtering deposition on Sitall (TiO2) glass substrates. In the grown FeNi films, the FeNi layer nominal thickness varied from 0.6 to 2.5 nm, across the percolation transition at the d c ≃ 1.8 nm. We discovered that, beyond conventional spin-magnetism of Fe21Ni79 permalloy, the extracted out-of-plane magnetization response of the nanoisland FeNi films is not saturated in the range of investigated magnetic fields and exhibits paramagnetic-like behavior. We found that the anomalous out-of-plane magnetization response exhibits an escalating slope with increase in the nominal film thickness from 0.6 to 1.1 nm, however, it decreases with further increase in the film thickness, and then practically vanishes on approaching the FeNi film percolation threshold. At the same time, the in-plane response demonstrates saturation behavior above 1.5–2T, competing with anomalously large diamagnetic-like response, which becomes pronounced at high magnetic fields. It is possible that the supported-metal interaction leads to the creation of a thin charge-transfer (CT) layer and a Schottky barrier at the FeNi film/Sitall (TiO2) interface. Then, in the system with nanoscale circular domains, the observed anomalous paramagnetic-like magnetization response can be associated with a large orbital moment of the localized electrons. In addition, the inhomogeneous nanoisland FeNi films can possess spontaneous ordering of toroidal moments, which can be either of orbital or spin origin. The system with toroidal inhomogeneity can lead to anomalously strong diamagnetic-like response. The observed magnetization response is determined by the interplay between the paramagnetic- and diamagnetic-like contributions.

Stable room temperature magnetocurrent in electrodeposited permeable n-type metal base transistor

We investigated a permeable metal base transistor consisting of a ZnO/NiFe/Si heterostructure. Both ZnO and NiFe layers were grown by electrodeposition techniques, using only adhesive tape masks to define deposition regions. The base permeability can thus be controlled by varying the NiFe deposition time. We report here our best results obtained for the permeable NiFe base close to the electrical percolation threshold, which gives reasonable sensitivity to the device. Magnetocurrent measurements carried out at room temperature show that this permeable metal base transistor is stable and sensitive under applied magnetic fields of low intensities, ∼100 Oe, required for electronics integration.

Tuning Electronic Structure of NiFe Layered Double Hydroxides with Vanadium Doping toward High Efficient Electrocatalytic Water Oxidation

AbstractBinary NiFe layer double hydroxide (LDH) serves as a benchmark non‐noble metal electrocatalyst for the oxygen evolution reaction, however, it still needs a relatively high overpotential to achieve the threshold current density. Herein the catalyst's electronic structure is tuned by doping vanadium ions into the NiFe LDHs laminate forming ternary NiFeV LDHs to reduce the onset potential, achieving unprecedentedly efficient electrocatalysis for water oxidation. Only 1.42 V (vs reversible hydrogen electrode (RHE), ≈195 mV overpotential) is required to achieve catalytic current density of 20 mA cm−2 with a small Tafel slope of 42 mV dec−1 in 1 m KOH solution, which manifests the best of NiFe‐based catalysts reported till now. Electrochemical analysis and density functional theory +U simulation indicate that the high catalytic activity of NiFeV LDHs mainly attributes to the vanadium doping which can modify the electronic structure and narrow the bandgap thereby bring enhanced conductivity, facile electron transfer, and abundant active sites.

A flexible giant magnetoresistive device for sensing strain direction

Miniaturized strain sensors are of value in a variety of areas, including wearable devices and structural health monitoring. Strain gauges based on magnetoresistance effects have previously been developed and offer potential advantages over conventional devices. However, these approaches have so far focused on sensing only the magnitude of the strain. Here, we show that a flexible giant magnetoresistive device can be used to detect the direction of strain in a material. Our trilayer devices, which are fabricated on a flexible substrate, consist of a strain-sensitive ferromagnetic cobalt layer and a strain-insensitive ferromagnetic permalloy (NiFe) layer, separated by a non-magnetic copper layer. We also show that the strain-sensitive and strain-insensitive layers can be made from a single ferromagnetic material by engineering the magnetoelastic properties of cobalt layers. Our integration of spintronics and flexible electronics could lead to the development of a flexible sensor sheet capable of mapping local strain directions. The direction of strain in a material can be detected using flexible giant magnetoresistive devices that consist of a strain-sensitive free layer and a strain-insensitive pinned layer.

Spin-valve Josephson junctions for cryogenic memory

Josephson junctions containing two ferromagnetic layers are being considered for use in cryogenic memory. Our group recently demonstrated that the ground-state phase difference across such a junction with carefully chosen layer thicknesses could be controllably toggled between zero and $\ensuremath{\pi}$ by switching the relative magnetization directions of the two layers between the antiparallel and parallel configurations. However, several technological issues must be addressed before those junctions can be used in a large-scale memory. Many of these issues can be more easily studied in single junctions, rather than in the superconducting quantum interference device (SQUID) used for phase-sensitive measurements. In this work, we report a comprehensive study of spin-valve junctions containing a Ni layer with a fixed thickness of 2.0 nm and a NiFe layer of thickness varying between 1.1 and 1.8 nm in steps of 0.1 nm. We extract the field shift of the Fraunhofer patterns and the critical currents of the junctions in the parallel and antiparallel magnetic states, as well as the switching fields of both magnetic layers. We also report a partial study of similar junctions containing a slightly thinner Ni layer of 1.6 nm and the same range of NiFe thicknesses. These results represent the first step toward mapping out a ``phase diagram'' for phase-controllable spin-valve Josephson junctions as a function of the two magnetic layer thicknesses.

Spin Seebeck effect and thermal spin galvanic effect in Ni80Fe20/p-Si bilayers

The development of spintronics and spin-caloritronics devices needs efficient generation, detection, and manipulation of spin current. The thermal spin current from the spin-Seebeck effect has been reported to be more energy efficient than the electrical spin injection methods. However, spin detection has been the one of the bottlenecks since metals with large spin-orbit coupling is an essential requirement. In this work, we report an efficient thermal generation and interfacial detection of spin current. We measured a spin-Seebeck effect in Ni80Fe20 (25 nm)/p-Si (50 nm) (polycrystalline) bilayers without a heavy metal spin detector. p-Si, having a centrosymmetric crystal structure, has insignificant intrinsic spin-orbit coupling, leading to negligible spin-charge conversion. We report a giant inverse spin-Hall effect, essential for the detection of spin-Seebeck effects, in the Ni80Fe20/p-Si bilayer structure, which originates from Rashba spin orbit coupling due to structure inversion asymmetry at the interface. In addition, the thermal spin pumping in p-Si leads to spin current from p-Si to the Ni80Fe20 layer due to the thermal spin galvanic effect and the spin-Hall effect, causing spin-orbit torques. The thermal spin-orbit torques lead to collapse of magnetic hysteresis of the 25 nm thick Ni80Fe20 layer. The thermal spin-orbit torques can be used for efficient magnetic switching for memory applications. These scientific breakthroughs may give impetus to the silicon spintronics and spin-caloritronics devices.

Antidot patterned single and bilayer thin films based on ferrimagnetic Tb–Co alloy with perpendicular magnetic anisotropy

Hysteresis properties and magnetization reversal in TbCo(30 nm) and FeNi(10 nm)/TbCo(30 nm) films with nanoscale antidot lattices are investigated to test the effect of nanoholes on the perpendicular anisotropy in the TbCo layer and the induced exchange bias in the FeNi layer. The antidots are introduced by depositing the films on top of hexagonally ordered porous anodic alumina substrates with pore diameter and interpore distance fixed to 75 nm and 105 nm, respectively. The analysis of combined vibrating sample magnetometry, Kerr microscopy and magnetic force microscopy imaging measurements has allowed us to link macroscopic and local magnetization reversal processes. For magnetically hard TbCo films, we demonstrate the tunability of magnetic anisotropy and coercive field (i.e., it increases from 0.2 T for the continuous film to 0.5 T for the antidot film). For the antidot FeNi/TbCo film, magnetization of FeNi is confirmed to be in plane. Although an exchange bias has been locally detected in the FeNi layer, the integrated hysteresis loop has increased coercivity and zero shift along the field axis due to the significantly decreased magnetic anisotropy of TbCo layer.

Spin valve heterostructures built using the shadowing effect: Setting NiFe and Co magnetization directions for non-collinear couplings

An experimental method was developed to set the magnetization direction in ferromagnetic layers of Si(100)/Cu/NiFe/Cu/Co/IrMn/Cu morphologically modified spin valves. Large uniaxial anisotropies emerged in the NiFe and Co layers due to modifications of their morphologies induced by the shadowing effect that arises from oblique depositions. Therefore, we set the uniaxial anisotropy axes in pre-set directions by controlling the sputtered beam direction relative to the sample reference. We were able to tune the angle between the magnetization directions of the NiFe and Co layers in a continuous interval from 0° to 90° due to the interplay between the Co and NiFe uniaxial anisotropies and the unidirectional anisotropy at the Co/IrMn interface. This type of non-collinear coupling cannot be found in conventional spin valve devices with passive spacers through which the coupling is governed by bilinear and biquadratic couplings. The methodology of preparation proposed here allows an extra control over the magnetism of the spin valves, which can be promising for technological applications.

Interface perpendicular magnetic anisotropy in ultrathin Ta/NiFe/Pt layered structures

Interface perpendicular magnetic anisotropy (PMA) in ultrathin Ta/NiFe/Pt layered structures was investigated through magnetization measurements. Ta/NiFe/Pt films with NiFe layer thickness (t) values of 2 nm or more showed typical in-plane magnetization curves, which was presumably due to the dominant contribution of the shape magnetic anisotropy. The thickness dependence of the saturation magnetization of the entire NiFe layer (Ms) was well analyzed using the so-called dead-layer model, showing that the magnetically active part of the NiFe layer has saturation magnetization () independent of t and comparable to the bulk value. In the perpendicular direction, the saturation field Hk was found to clearly decrease with decreasing t, while the effective field of shape magnetic anisotropy due to the active NiFe saturation magnetization should be independent of t. These observations show that there exists interface PMA in the layered structures. The interface PMA energy density was determined to be ∼0.17 erg/cm2 using the dead-layer model. Motivated by the correlation observed between Ms and Hk, we also attempted to interpret the experimental results using an alternative approach beyond the dead-layer model; however, it gives only implications on the incomplete validity of the dead-layer model and no better understanding.

Au/NiFe/M(Au, MoS2, graphene) trilayer magnetoplasmonics DNA-hybridized sensors with high record of sensitivity.

The demonstration of biosensors based on the surface plasmon effect holds promise for future high-sensitive electrodeless biodetection. The combination of magnetic effects with surface plasmon waves brings additional freedom to improve sensitivity and signal selectivity. Stacking biosensors with two-dimensional (2-D) materials, e.g., graphene (Gr) and MoS2, can influence plasmon waves and facilitate surface physiochemical properties as additional versatility aspects. We demonstrate magnetoplasmonic biosensors through the detuning of surface plasmon oscillation modes affected by magnetic effect via the presence of the NiFe (Py) layer and different light absorbers of Gr, MoS2, and Au ultrathin layers in three stacks of Au/Py/M(MoS2, Gr, Au) trilayers. We found minimum reflection, resonance angle shift, and transverse magneto-optical Kerr effect (TMOKE) responses of all sensors in the presence of the ss-DNA monolayer. Very few changes of ∼5×10-7 in the ss-DNA's refractive index result in valuable TMOKE response. We found that the presence of three-layer Gr and two-layer MoS2 on top of the Au/Py bilayer can dramatically increase the sensitivity by nine and four times, respectively, than the conventional Au/Co/Au trilayer. Our results show the highest reported DNA sensitivity based on the coupling of light with 2-D materials in magnetoplasmonic devices.