Abstract
We investigated a permeable metal base transistor consisting of a ZnO/NiFe/Si heterostructure. Both ZnO and NiFe layers were grown by electrodeposition techniques, using only adhesive tape masks to define deposition regions. The base permeability can thus be controlled by varying the NiFe deposition time. We report here our best results obtained for the permeable NiFe base close to the electrical percolation threshold, which gives reasonable sensitivity to the device. Magnetocurrent measurements carried out at room temperature show that this permeable metal base transistor is stable and sensitive under applied magnetic fields of low intensities, ∼100 Oe, required for electronics integration.
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