Negative Temperature Coefficient Of Resistance Research Articles

Effect of milling time on structural and electrical properties of thermomechanically synthesized of Ba0.1 (Bi0.45Na0.45)TiO3 nanoceramics for ferroelectric random-access memory device

Lead-free Ba0.1(Bi0.45Na0.45)TiO3 (BBNTO) nanoceramics were synthesized using high-energy ball milling, followed by a solid-state reaction method. XRD analysis of the microstructure indicated the formation of tetragonal symmetry. The crystallite size of the nanoceramic powder decreased from ∼ 28 nm to 10 nm after milling for 0, 30, 60, and 90 hours. The dielectric properties of the nanoceramics showed significant improvement, with a diffuse phase transition occurring around 80 °C). The dielectric constant increased with temperature across various frequencies, reached a maximum value at approximately at temperature ∼ 380 °C. At lower temperatures and higher frequencies, the relative permittivity and tangent loss depend on the crystallite size and milling duration. Impedance spectroscopy data analysis revealed size-dependent impedance characteristics and dielectric relaxation. The ac conductivity plot adhered to the Arrhenius relation, and the calculated activation energy confirmed the negative temperature coefficient of resistance (NTCR) behavior. P-E loops confirmed ferroelectric properties, indicating potential for use in future ferroelectric-based storage devices.

Chemically driven BaTiO3–CoFe2O4 nanocomposite with strong dielectric and low leakagecharacteristics for electrocatalytic water splitting reaction

The switchable electronic properties at the surface of ferroelectric nanomaterials offer possibilities for electrocatalytic hydrogen and oxygen evolution reactions, HER and OER respectively. Here, 0.5(BaTiO3)-0.5(CoFe2O4) (abbreviated as BTCF0.5) are prepared chemically. The material shows a high dielectric constant in the order of 107. Nyquist plot is consistent with non-Debye-type and negative temperature coefficient of resistance (NTCR) characteristics with low leakage current. BTCF0.5 shows superior electrocatalytic HER and OER with a low overpotential of ∼156 and ∼284 mV at current density10 mA/cm2 along with Tafel slopes of 43.37 mV/dec and 41.52 mV/dec respectively. The stability of the electrocatalyst is checked through a chronoamperometry test and up to 1000 cycles of CV both for HER and OER operations. The non-traditional behavior of the nanocomposite may make it highly desirable for usage in numerous renewable and sustainable energy-related applications in the present-day scenario.

Analysis of the Sr2GdTi2Nb3O15 ceramic: Investigation into its structural properties and complex impedance spectroscopy

In this study, we successfully synthesized tetragonal tungsten bronze with the nominal formula Sr2GdTi2Nb3O15 and systematically examined of its structure, dielectric, and electrical properties. The material was synthesized through the solid-state reaction technique at a temperature of 1350 °C. The formation of the tetragonal tungsten bronze in the P4/mbm space group was verified via Rietveld refinement using X-ray diffraction data. The electrical characteristics of the ceramic were examined using non-destructive complex impedance spectroscopy (CIS) across a range of frequencies (10–106 Hz) at various temperatures. The real component of impedance (Z') displayed a decrease with rising frequency, suggesting a negative temperature coefficient of resistance (NTCR) for this sample. The Cole-Cole plot of the compound exhibits two semicircles, with the compound's resistance gradually decreasing as the temperature increased. Moreover, the activation energy (Ea) was found to be approximately 0.9 eV, which confirms that oxygen vacancies are responsible for the observed relaxation behavior. Complex modulus analysis confirmed the presence of non-Debye relaxations. These results contribute to a thorough comprehension of the structural and electrical characteristics of Sr2GdTi2Nb3O15, opening avenues for potential applications in diverse electronic devices.

Dielectric Relaxation, Electrical Conductivity, Dielectric Permittivity, and Correlated Barrier Hopping Conduction Mechanism Analysis in Ag Doped Bi2S3 at Low Temperatures

AbstractPure and 6% Ag doped bismuth sulfide (Bi2S3) were synthesized via solid‐state reaction method at 500 °C. The X‐ray diffraction method confirmed the orthorhombic phase with average crystallite size ∼25 nm and average lattice strain ∼0.5% and ∼0.6% for pure and 6% Ag doped Bi2S3. The scanning electron microscope (SEM) images confirmed nanobelt morphology. A direct bandgap of ∼3.3 and ∼3.4 eV for pure and doped Bi2S3 was estimated using UV–vis spectroscopy, respectively. AC measurements were performed from 200 Hz to 2 MHz at temperature 223–298 K. Investigation of Nyquist plots of 6% Ag doped Bi2S3 nanobelts suggested space‐charge‐dependent behavior and indicated an negative temperature coefficient of resistance (NTCR). AC conductivity adhered to Jonscher's power law in which the decreasing trend of s‐parameter with increasing temperature indicates correlated barrier hopping conduction mechanism. From this model, hopping distance (∼10−9–10−11 m) and density of states (∼1022–1023 eV−1 cm−3) were estimated. The dielectric permittivity exhibited dispersion at low frequencies due to the combined effect of electronic, ionic, and interfacial polarizations. Presence of two semicircular arcs in the complex modulus analysis suggested the presence of both grain and grain‐boundary effects.

Relaxation behaviour, conductive grains and resistive boundaries of bismuth-based double perovskite Bi2-xLaₓFeGaO₆

The successful synthesis of the ceramic Bi2-xLaxFeGaO6 powder ceramic sample with varying La content (x = 0.01, 0.03, 0.07, 0.10) were synthesized via the solid-state method. Analysis using X-ray diffraction at room temperature was carried out to examine its structure, revealing a crystallite size of approximately 22.07–50.84 nm. This size indicates the potential applications in microwave technology due to its small grain size, which has the capability to enhance microwave absorption properties. The dielectric constant of the material shows an increase with the frequency applied, in accordance with the behaviour anticipated by the dielectric HN model and Debye model. This model proposes that the material's dielectric response can be manipulated by modifying the applied frequency, making it a valuable tool in the material design for specific purposes. The full width at half maximum (FWHM) curve of the electrical modulus displayed variability, suggesting the existence of a non-Debye relaxation mechanism in the material. This indicates that the material could possess distinct electrical properties that might be beneficial for certain applications. The outcomes demonstrated a negative temperature coefficient resistance (NTCR), indicating a decrease in the material's resistance with increasing temperature. Such behaviour can be advantageous in situations where temperature variations require monitoring or regulation. The Cole-Cole plot illustrated that the grains exhibit conductive behaviour at lower frequencies, a crucial insight for comprehending the material's electrical properties. In conclusion, these results indicate that the ceramic Bi2-xLaxFeGaO6 for x = 0.01, 0.03, 0.07, 0.1) showcases promising attributes for various applications, particularly in microwave technology and electrical conductivity.

Investigation of electrical, dielectric and multiferroic properties of 0.7Bi0.95Sm0.05Fe1-xGaxO3-0.3BaTiO3 composite ceramic system for high temperature piezoelectric applications

Lead-free composite ceramics, 0.7Bi0.95Sm0.05Fe1-xGaxO3-0.3BaTiO3 (BSFGx-BT), were made using a solid-state reaction method for x = 2.5, 5, 10, 15, and 20 %. We have investigated the effects of Samarium (Sm) and Gallium (Ga) co-doping on the crystal structure, topography, spectroscopy, electrical and multiferroic characteristics of the 0.7BiFeO3-0.3BaTiO3 (0.7BFO-0.3BTO) system for piezoelectric applications. The structural results indicate that the composite ceramics exhibited rhombohedra R and tetragonal T phases characterized by R3c and P4mm space groups, respectively which was also further confirmed by X-ray Rietveld refinement pattern analysis. In dielectric behaviour study high Curie temperature of 550 °C was obtained with high temperature stability. Furthermore, the study investigated the effects of grain and grain boundaries on capacitive and resistive properties. The ceramics displayed the characteristics of the negative temperature coefficient of resistance (NTCR). It was observed that as the Ga concentration increased, the grain resistance (Rb) also increased, reaching its maximum value for x =10 %. Additionally, at higher temperatures, this composite exhibited lower electrical resistivity. Importantly, the ceramics showed the co-existence of ferromagnetic and ferroelectric behaviour with the enhanced values of remanent magnetization (Mr)= 0.043 emu/g, coercivity (Hc) = 5730 Oe and remanent polarization (Pr) = 6.07 µC/cm2, coercive field (Ec) = 6.78 kV/cm for the composition x =10 %. These findings suggest that Sm & Ga incorporated 0.7BFO-0.3BTO composite ceramics can show promising high-temperature piezoelectric applications.

High-temperature thin-film strain sensors with low temperature coefficient of resistance and high sensitivity via direct ink writing

High-temperature thin-film strain sensors are advanced technological devices for monitoring stress and strain in extreme environments, but the coupling of temperature and strain at high temperature is a challenge for their use. Here, this issue is addressed by creating a composite ink that combines Pb2Ru2O6 and TiB2 using polysilazane (PSZ) as a binder. After direct writing and annealing the PSZ/Pb2Ru2O6/TiB2 film at 800 °C in air, the resulting thin film exhibits a low temperature coefficient of resistance (TCR) of only 281 ppm/°C over a wide temperature range from 100 °C to 700 °C, while also demonstrating high sensitivity with a gauge factor approaching 19.8. This exceptional performance is attributed to the intrinsic properties of Pb2Ru2O6, which has positive TCR at high temperature, and TiB2, which has negative TCR at high temperature. Combining these materials reduces the overall TCR of the film. Tests showed that the PSZ/Pb2Ru2O6/TiB2 film maintains stable strain responses and significant signal output even under varying temperature. These findings provide valuable insights for developing high-temperature strain sensors with low TCR and high sensitivity, highlighting their potential for applications in high-temperature strain measurements.

Polaron assisted hopping mechanism in microwave processed Nd doped second layered aurivillius SrBi2Nb2O9 ceramics

The polycrystalline Sr0.8Sn0.2Bi1.75Nd0.25Nb2O9 (NdSBN) was synthesized using the green synthesis microwave sintering method, which significantly reduced the processing parameters of the NdSBN ceramics. Orthorhombic crystal structure with A21am symmetry was revealed by Rietveld refinement study, whereas the doping-induced strain and crystallite size was studied using the Williamson Hall method. Crossectional SEM micrographs confirm the plate-like structure, with an average grain size of 273.7 nm. A diffuse type of phase transition was observed at 345 °C, which usually arises due to compositional fluctuations and mobile oxygen vacancies; further, the diffusiveness of the NdSBN was studied using Uchino and Nomura function, a modified version of Curie-Weiss law (CW). The frequency and temperature-dependent dielectric study of NdSBN ceramics display a Maxwell-Wagner relaxation with a high loss in a low frequency regime, possibly due to the presence of leakage current in the solid solution. Frequency dependent AC conductivity obeys Jonscher's power law, whereas DC conductivity supports polaron assisted hopping in NdSBN composition with dual activation energies of 0.55 eV and 0.75 eV, which correspond to electrons and ions, respectively. The non-Debye type relaxation mechanism in conjunction with negative temperature coefficient of resistance (NTCR) behavior was demonstrated by temperature dependent impedance spectroscopy, while modulus spectroscopy confirmed the multiple relaxation processes in NdSBN ceramics.

The enhanced antiferromagnetic interaction and tunable temperature coefficient of resistivity in antiperovskite compounds Mn3−xCoxAgN (0≤x≤0.2)

The magnetic and electric evolution with the substitution level of Co element has been investigated in Mn[Formula: see text]CoxAgN. The DC magnetic measurements demonstrate that the substitution of Co for Mn enhances the antiferromagnetic (AFM) interaction and weakens the magnetic irreversibility at low temperature. The strengthening of AFM order in Mn[Formula: see text]CoxAgN has been attributed to the enhanced Co–Mn AFM interaction and weakened Co–N–Mn ferromagnetic (FM) interaction. Additionally, with the gradual increase of Co content, the temperature coefficient of resistivity (TCR) in paramagnetic (PM) region changes from a positive one to a negative one gradually. When [Formula: see text], the TCR value is only [Formula: see text]5[Formula: see text]ppm/K, which is one magnitude smaller than that of conventional standard resistor materials. The negative TCR phenomenon is closely associated with the Co-element-induced lattice disorder, which leads to the weak localization of conduction electrons.

Enhanced dielectric and electrical properties of Ba(1−x)Nd2x∕3Zr0.1Ti0.9O3 (0.00 ≤ x ≤ 0.04) electroceramics for high temperature-based energy storage devices

The demand for high-temperature endurable dielectric materials with higher thermal stability in electronic systems operating under extreme temperatures sets a significant channel for the electronic industry. This work focuses on the dielectric and impedance behavior for lead-free Ba1−xNd2x∕3Zr0.1Ti0.9O3 (BNZT); (0.00 ≤x≤ 0.04) between 300 ∘C – 400 ∘C and synthesized by conventional solid-state reaction method at optimum temperatures. Structural characterizations confirmed the tetragonal (P4mm symmetry) structure formations for the BNZT ceramics. XPS analysis confirmed the Nd-substitution at the Ba-site in the BNZT ceramics. FE-SEM study showed grain growth reduction with enhanced grain boundaries. The dielectric study showed lower dielectric loss with enhanced dielectric permittivity at high temperatures. Impedance analysis confirmed the negative temperature coefficient of resistance (NTCR) and non-Debye type behavior with higher thermal stability. Singly-ionized oxygen vacancies mainly govern the conduction process in BNZT ceramics. Enhanced dielectric and impedance properties suggest that Nd-substituted BNZT electroceramics are promising materials for applications in high-temperature-based energy storage systems.

Exploring the structural characteristics and electrical conductivity of MnTiO3 across ferroelectric and paraelectric phases

In this study, we present the ceramic's structural, dielectric, and impedance characteristics obtained through the solid-state reaction method synthesis. Initial structural analysis was conducted utilizing X-ray diffraction at room temperature. The XRD results show that MnTiO3 exhibits rhombohedral symmetry. SEM images of MnTiO3 show the presence of both cubic and large agglomerated grains. This demonstrates the effectiveness of the dielectric HN model in controlling the mechanism. The alternating current (ac) conductivity, when examined in relation to frequency, displays a remarkable adherence to the Johnscher's power law. The change in electrical modulus and the width at half maximum (FWHM) of the curve indicate that the as-prepared sample exhibits a non-Debye relaxation mechanism. Both the temperature data and the frequency dependence of the impedance were used to analyze the electrical conductivity of the sample, which showed a negative temperature coefficient resistance (NTCR).

Exploring phase transition and charge carrier dynamics in La6MoO12 ionic conductors: impact of metal-substitution

In this research, we effectively substituted Mo with Nb in the La6MoO12 compound by incorporating Sm2O3 through the solution combustion method and investigated their structural and electrical properties. Analysis of the X-ray diffraction patterns validated a shift from the rhombohedral R2 phase to the R1 phase as the Nb concentration increased. Rietveld refinement of the X-ray diffraction data yielded comprehensive microstructural insights into the La5.4Sm0.6Mo0.85Nb0.15O12±δ compound (R1 phase). Energy-dispersive X-ray spectroscopy (EDX) and elemental mapping were employed to validate the homogeneous distribution of all elements across the compositions. Impedance spectra exhibited a negative temperature coefficient of resistance (NTCR) behavior in the samples. The La5.4Sm0.6Mo0.94Nb0.06O12±δ composition (in the R2 phase) displayed the highest bulk conductivity value. Analysis of different spectra revealed a scaling behavior indicative of a temperature-independent mechanism. Current-voltage (I-V) measurements confirmed the presence of leakage current attributed to interface-limited Schottky emission, with the La5.4Sm0.6Mo0.85Nb0.15O12±δ composition exhibiting the highest barrier height (0.83 eV).

Indium tin oxide as a dual region resistance temperature detector

Resistance temperature detectors (RTD’s) have seen an increase in popularity due to their measurement accuracy and reliability compared to thermocouples. Most RTD’s are made from refractory noble metals such as platinum due to their resistance to oxidation at temperatures greater than 800 °C and near linear output over large temperature ranges. Conductive oxides have been investigated in high temperature RTD applications due to their stability in oxidizing environments, inherently large temperature coefficients of resistance (TCR) and high melting points. In this study, thin film RTDs comprised of indium tin oxide (ITO) sputter deposited in an argon rich atmosphere were fabricated and tested. ITO RTD’s exhibited a positive TCR between 20 °C and 500 °C and a negative TCR between 700 °C and 1000 °C, thus making it suitable for temperature measurement in two different temperature regions.

Dielectric behaviour, impedance and conductivity studies of YBaYbSiO oxy-apatite compounds

This paper reports the dielectric behaviour and electrical conduction properties of Y6-xBa4Ybx(SiO4)6O2 (YBaSiO: xYb) compounds. The Scanning Electron Microscopy (SEM) was utilized to obtain the surface microstructure of the compound. The micrographs showed both the circular and elongated shape of grains and their random distribution. The Fourier Transform Infrared Spectroscopy (FTIR) was used to confirm the presence of bond formations in the compounds. From the spectra, it was observed that the peaks at 690 cm−1 and a band from 850 cm−1 to 998 cm−1 are due to the stretching frequency of Y-O molecules and Si-O molecules, respectively. The peak centred at 1464 cm−1 is of vibration modes of Ba2+ions. These peaks confirmed the formation of oxy-apatite compounds. Both the dielectric permittivity and dielectric loss, decreases with increasing values of frequency due to reduction in the polarization effects on the higher side of frequency. This is because the dipole orientation lags with the rapidly reversing alternating current (ac) field. The value of dielectric loss was found to range between, 0 – 3.5 in frequency ∼ 100 Hz and 0 – 0.5 in frequency ∼ 100,000 Hz, up to temperature 500 °C. The impedance value decreases and hence a. c. conductivity increases, at higher frequencies. The increment in ac values followed the universal power law. The Nyquist plot showed that the area under the curves reduces and hence indicates negative temperature coefficient of resistance i.e., NTCR behaviour of compounds. The obtained results suggest the utilization of compound in electrical devices as power loss component, solid oxide fuel cells, and capacitors etc.

Co-relation between Rietveld analysis, dielectric studies and impedance spectroscopy of the Ba1−xSrxTiO3 ceramics

Barium strontium titanate (BST), with varying Sr doping levels (x = 0, 0.05, 0.075, 0.1, 0.15, 0.3), was successfully synthesized using the solid-state reaction technique. The aim was to investigate the microstructural, dielectric, and impedance properties as Sr doping increases. X-ray diffraction analysis revealed a tetragonal phase structure for these materials, belonging to the P4mm space group, confirmed via Rietveld refinement using the Fullprof suite. SEM analysis indicated the decrement in grain sizes ranging from 0.198 to 0.0582 μm as doping concentration increases. The temperature and frequency dependencies of the dielectric constant were examined, with the Curie temperature observed in the range of 295 to 351 K with decreasing trend with substitution of strontium in pure barium titanate, showing an increase in dielectric constant with rising temperatures and non-relaxor behavior. P–E loops of BST samples illustrated bulk ferroelectric behavior, with maximum values of retentivity and coercivity reaching 1.56 and 13.97, respectively, in the highly doped BST sample. Various analytical techniques, including Nyquist plots, real and imaginary components of impedance, conductivity measurements, modulus formalism, and determination of charge carrier activation energy, were employed to elucidate the relationships between microstructure and electrical properties. Temperature-dependent resistivity demonstrated the negative temperature coefficient of resistance (NTCR) behavior in Sr-doped barium titanate. Impedance studies revealed semicircular arcs in Nyquist plots, indicating contributions from both grains and grain boundaries. The formation of well-defined grains in the BST samples was further confirmed through modulus spectroscopy.

Enhancement of dielectric performance in tungsten bronze ceramics by substituting 25 % of Gd into Sr2SmTi2Nb3O15 ceramic

This study investigates the synthesis and systematic examination of tungsten bronze ceramics Sr2GdxSm1-xTi2Nb3O15 (SGSTN, x = 0, 0.25, 0.5, 0.75) using the solid-state reaction method. X-ray diffraction revealed tetragonal tungsten bronze structures with space group P4/mbm for x = 0.25, 0.5, and 0.75, and P4bm for x = 0. Scanning electron microscopy showed high densification and uniform grain dispersion, with grain sizes ranging from 6.2 to 10.8 μm depending on the Gd content. Impedance spectroscopy demonstrated that the dielectric properties were influenced by the addition of Gd3+, with a dielectric constant of 2549.97 at 400 °C and 1 kHz for x = 0.25. Impedance analysis suggested a negative temperature coefficient of resistance (NTCR), and Cole-Cole plots showed single semicircular arcs. Activation energy increased with decreasing (A1)-site ion size, indicating that oxygen vacancies were responsible for the relaxation phenomena. Complex modulus analysis confirmed the presence of non-Debye relaxations in the material.

A Comprehensive Study of Cerium-Modified Bi2FeMnO6 Double Perovskite: Synthesis, Structure, Properties and Applications

This paper presents a detailed synthesis method by solid-state reaction route and typical characterization (structural, microstructural, dielectric, impedance, modulus, and optical properties) of a double perovskite material Bi2FeMn[Formula: see text]Ce[Formula: see text]O6. An orthorhombic crystal structure having an average crystallite size of 32.2[Formula: see text]nm is suggested by X-ray diffraction data (XRD). Scanning electron microscope (SEM) micrograph detects the presence of cylindrical nanorod-shaped distinct grains and well-defined grain boundaries in this material and the average grain size is 5.82[Formula: see text][Formula: see text]m. Furthermore, the purity and the presence of all constituent elements in the material were confirmed from energy dispersive X-ray (EDX) analysis and color mapping. Dielectric, impedance, modulus, and AC conductivity properties are studied within the temperature range of 25–500∘C and frequency range of 1[Formula: see text]kHz to 1[Formula: see text]MHz. The high dielectric constant at a low-frequency zone and low dielectric loss found in this material make it a promising candidate for better energy-storing devices. The negative temperature coefficient of resistance (NTCR) behavior is observed from the impedance study. The non-Debye relaxation is detected in the modulus study. The semiconducting nature of this material is verified by semicircular arcs observed in both Nyquist and Cole–Cole plots. The thermally activated conduction mechanism is confirmed by an AC conductivity study. The existence of Bi–O, Fe–O, Mn–O and Ce–O stretching vibrations are observed from the FTIR study and explain the presence of all constituent elements in the sample. The bandgap energy of 1.7[Formula: see text]eV is calculated from UV-DRS analysis and hence this material can be used for advanced optoelectronic and photovoltaic applications.

Unveiling the structure-property relationship in a disordered inverse Heusler alloy Ti2MnAl

Search for novel spintronic materials in family of Heusler alloys has attained significant interest in recent years. In this context, Ti2MnAl is interesting as it is predicted to host spin gapless semiconducting state and compensated ferrimagnetic ordering. Here we report a detailed experimental investigation of Ti2MnAl. Our studies reveal that Ti2MnAl crystallizes in cubic structure with strong atomic disorder along with Pauli paramagnetic behaviour. The influence of disorder manifests in form of non-interacting superparamagnetic clusters at low temperatures and negative temperature co-efficient of resistivity. The carrier concentration obtained from Hall resistivity rules out the possibility of spin gapless semiconducting state. Our studies indicate that atomic disorder plays an important role in determination of physical properties of Ti2MnAl.

A Comprehensive Study of Cu/W Double Substitution in Strontium Manganate Ceramics for Some Device Applications

AbstractIn this communication, the synthesis and characterizations of modified strontium manganate (SrCu1/3Mn1/3W1/3O3) (SCMWO) by high‐temperature solid‐state method are reported. The structural analysis predicts a monoclinic structure with a crystallite size of 36.8 nm. The analysis of the Raman active modes reveals the presence of all the constituent atomic vibrations. The study of the ultraviolet–visible spectrum provides a bandgap energy of 1.71 eV, which may be suitable for photovoltaic applications. A Maxwell‐Wanger type of polarization effect is observed at low frequency while low dielectric loss makes the material suitable for energy storage devices. The study of the impedance plots reveals the negative temperature coefficient of resistance (NTCR) character. The activation energy increases with both frequency and temperature in the modified perovskite suggesting that conductivity of the sample increases and material characters are changing from dielectric to semiconducting. The symmetrical curves in the electrical modulus plots and shift toward higher frequency region agree with the results of the non‐Debye‐type of relaxation mechanism. The semicircular curves in the Cole–Cole plots confirm the semiconducting nature and are also well supported by the results of Nyquist plots. The studied material exhibits a semiconductor nature, which may be found suitable for energy storage device applications.

Deep Learning‐Assisted Sensitive 3C‐SiC Sensor for Long‐Term Monitoring of Physical Respiration

AbstractIn human life, respiration serves as a crucial physiological signal. Continuous real‐time respiration monitoring can provide valuable insights for the early detection and management of several respiratory diseases. High‐sensitivity, noninvasive, comfortable, and long‐term stable respiration devices are highly desirable. In spite of this, existing respiration sensors cannot provide continuous long‐term monitoring due to the erosion from moisture, fluctuations in body temperature, and many other environmental factors. This research developed a wearable thermal‐based respiration sensor made of cubic silicon carbide (3C‐SiC) using a microfabrication process. The results showed that as a result of the Joule heating effect in the robustness 3C‐SiC material, the sensor offered high sensitivity with the negative temperature coefficient of resistance of approximately 5,200ppmK‐1, an excellent response to respiration and long‐term stability monitoring. Furthermore, by incorporating a deep learning model, this fabricated sensor can develop advanced capabilities to distinguish between the four distinct breath patterns: slow, normal, fast, and deep breathing, and provide an impressive classification accuracy rate of ≈ 99.7%. The results of this research represent a significant step in developing wearable respiration sensors for personal healthcare systems.