Abstract
Resistance temperature detectors (RTD’s) have seen an increase in popularity due to their measurement accuracy and reliability compared to thermocouples. Most RTD’s are made from refractory noble metals such as platinum due to their resistance to oxidation at temperatures greater than 800 °C and near linear output over large temperature ranges. Conductive oxides have been investigated in high temperature RTD applications due to their stability in oxidizing environments, inherently large temperature coefficients of resistance (TCR) and high melting points. In this study, thin film RTDs comprised of indium tin oxide (ITO) sputter deposited in an argon rich atmosphere were fabricated and tested. ITO RTD’s exhibited a positive TCR between 20 °C and 500 °C and a negative TCR between 700 °C and 1000 °C, thus making it suitable for temperature measurement in two different temperature regions.
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