Negative Differential Resistance Devices Research Articles

Density functional theory study of the electronic and optical properties of pentagraphyne nanotubes.

Pentagraphyne (PG-yne), a recently predicted two-dimensional (2D) carbon allotrope with appealing properties, has opened up possibilities for a wide range of applications. In this study, we investigate the structural, electronic, optical, and electrical transport properties of a novel one-dimensional (1D) system called pentagraphyne nanotubes (PG-yneNTs), formed by rolling a PG-yne sheet, using density functional theory (DFT) calculations. We design PG-yneNTs with diameters ranging from 6.94 Å to 13.62 Å and employ state-of-the-art theoretical calculations to confirm their energetic, dynamic, and thermodynamic stability. Our electronic band structure calculations reveal that all these nanotubes are wide indirect band gap semiconductors. Remarkably, PG-yneNTs exhibit superior optical properties, including high absorption coefficients and absorption spectra covering the visible regime of the electromagnetic spectrum, making them potential candidates for visible-light-driven photocatalysis and solar cells. Interestingly, both the electronic and optical band gaps increase with the diameter of the nanotubes. Additionally, the observation of negative differential resistance (NDR) phenomena in (4, 0) PG-yneNT suggests their potential applications in NDR devices such as fast switches, frequency multipliers, and memory devices.

Junctionless Negative-Differential-Resistance Device Using 2D Van-Der-Waals Layered Materials for Ternary Parallel Computing.

Negative-differential-resistance (NDR) devices offer a promising pathway for developing future computing technologies characterized by exceptionally low energy consumption, especially multivalued logic computing. Nevertheless, conventional approaches aimed at attaining the NDR phenomenon involve intricate junction configurations and/or external doping processes in the channel region, impeding the progress of NDR devices to the circuit and system levels. Here, an NDR device is presented that incorporates a channel without junctions. The NDR phenomenon is achieved by introducing a metal-insulator-semiconductor capacitor to a portion of the channel area. This approach establishes partial potential barrier and well that effectively restrict the movement of hole and electron carriers within specific voltage ranges. Consequently, this facilitates the implementation of both a ternary inverter and a ternary static-random-access-memory, which are essential components in the development of multivalued logic computing technology.

Light-Triggerable and Gate-Tunable Negative Differential Resistance in Small Molecules Heterojunction.

Negative differential resistance (NDR), a phenomenon in which the current decreases when the applied voltage is increased, is attracting attention as a unique electrical property. Here, we propose a broad spectral photo/gate cotunable channel switching NDR (CS-NDR) device. The proposed CS-NDR device has superior linear gate-tunable NDR behavior and highly reproducible properties compared to the previously reported NDR devices, as the fundamental mechanism of the CS-NDR device is directly related to a charge transport channel switching by the linear increase of the applied drain voltage. We also experimentally demonstrate that the photoinduced NDR behavior of the CS-NDR device was derived from the grain boundaries of dinaphtho[2;3-b:2',3'-f]-thieno[3,2-b]thiophene. Furthermore, this work produces a 9 × 9 CS-NDR device array composed of 81 devices, providing the reproducibility and uniformity of the CS-NDR device. Finally, we successfully demonstrate the detection of text images with 81 CS-NDR devices using the proposed photo/gate cotunable NDR behavior.

Synthesis of Nb‐Doped‐WS2–NbS2: A Degenerate‐Semiconductor–Metal Heterostructure

AbstractThe synthesis of semiconductor–metal (S–M) heterostructures comprising semiconducting (S)‐transition metal dichalcogenides (TMDs) and metallic (M)‐TMDs via chemical vapor deposition (CVD) has emerged as a highly promising avenue for achieving low contact resistance in TMD‐based devices. However, CVD‐grown S–M heterostructures are mainly focused on non‐degenerate semiconductors, despite degenerate semiconductors also being essential for semiconductor technology, such as negative differential resistance (NDR) device. In this study, a degenerate‐S–M heterostructure, Nb‐doped‐WS2–NbS2, is synthesized via CVD with a liquid‐metal precursor. Optimizing the growth parameters, such as growth temperature, precursor ratio, and H2 content in the mixture gas, affords the desirable degenerate‐Nb‐doped‐WS2–NbS2 heterostructure. Raman and photoluminescence spectroscopies, transmission electron microscopy, and energy‐dispersive spectroscopy clearly clarify the doping signal and layer structure of the heterostructure. A growth mechanism has been proposed using in‐plane and vertical models based on structural analysis. Electrical transport measurements reveal degenerate p‐type behavior in the Nb‐doped‐WS2. In the Nb‐doped‐WS2–NbS2 degenerate‐S–M heterostructure, the device flows about twice as much on‐state current as that by an Nb‐doped‐WS2/Cr contact.

Temperature‐Dependent Phase Transition in WS2 for Reinforcing Band‐to‐Band Tunneling and Photoreactive Random Access Memory Application

In the era of big data, negative differential resistance (NDR) devices have attracted significant attention as a means of handling massive amounts of information. While 2D materials have been used to achieve NDR behavior, their intrinsic material characteristics have produced limited performance improvements. In this article, a facile phase modification method is presented via a plasma‐assisted sulfidation process to synthesize multiphased WS2 thin films, including distorted 1 T (D‐1 T) phase and 2 H phases for photoreactive NDR devices with p‐Si. The D‐1 T phase offers a feasible route to achieve high‐performance NDR devices with excellent stability and semimetallic properties. A comprehensive investigation of experimental and computational analyses elucidates the phase transition mechanism with various temperatures and electrical properties of D‐1 T WS2. In addition, optimizing electron tunneling in the multiple‐phased tungsten disulfide (MP‐WS2)/p‐Si heterojunction at MP‐WS2 with 77.4% D‐1 T phase results in superior NDR performance with a peak‐to‐valley current ratio of 13.8 and reliable photoreactive random‐access memory. This unique phase engineering process via plasma‐assisted sulfidation provides a pioneering perspective in functionalization and reliability for next‐generation nanoelectronics.

Highly Tunable Negative Differential Resistance Device Based on Insulator-to-Metal Phase Transition of Vanadium Dioxide.

Negative differential resistance (NDR) based on the band-to-band tunneling (BTBT) mechanism has recently shown great potential in improving the performance of various electronic devices. However, the applicability of conventional BTBT-based NDR devices is restricted by their insufficient performance due to the limitations of the NDR mechanism. In this study, we develop an insulator-to-metal phase transition (IMT)-based NDR device that exploits the abrupt resistive switching of vanadium dioxide (VO2) to achieve a high peak-to-valley current ratio (PVCR) and peak current density (Jpeak) as well as controllable peak and valley voltages (Vpeak/valley). When a phase transition is induced in VO2, the effective voltage bias on the two-dimensional channel is decreased by the reduction in the VO2 resistance. Accordingly, the effective voltage adjustment induced by the IMT results in an abrupt NDR. This NDR mechanism based on the abrupt IMT results in a maximum PVCR of 71.1 through its gate voltage and VO2 threshold voltage tunability characteristics. Moreover, Vpeak/valley is easily modulated by controlling the length of VO2. In addition, a maximum Jpeak of 1.6 × 106 A/m2 is achieved through light-tunable characteristics. The proposed IMT-based NDR device is expected to contribute to the development of various NDR devices for next-generation electronics.

Ion-tunable antiambipolarity in mixed ion–electron conducting polymers enables biorealistic organic electrochemical neurons

Biointegrated neuromorphic hardware holds promise for new protocols to record/regulate signalling in biological systems. Making such artificial neural circuits successful requires minimal device/circuit complexity and ion-based operating mechanisms akin to those found in biology. Artificial spiking neurons, based on silicon-based complementary metal-oxide semiconductors or negative differential resistance device circuits, can emulate several neural features but are complicated to fabricate, not biocompatible and lack ion-/chemical-based modulation features. Here we report a biorealistic conductance-based organic electrochemical neuron (c-OECN) using a mixed ion–electron conducting ladder-type polymer with stable ion-tunable antiambipolarity. The latter is used to emulate the activation/inactivation of sodium channels and delayed activation of potassium channels of biological neurons. These c-OECNs can spike at bioplausible frequencies nearing 100 Hz, emulate most critical biological neural features, demonstrate stochastic spiking and enable neurotransmitter-/amino acid-/ion-based spiking modulation, which is then used to stimulate biological nerves in vivo. These combined features are impossible to achieve using previous technologies.

Negative differential resistance based on phase transformation.

The negative differential resistance (NDR) device is attracting attention because of its broad potential application in neuromorphic computing and non-volatile memory. However, only a limited range of materials show NDR and, therefore, there is less choice in material selection for NDR devices. Considering this issue, we here demonstrate a novel current controlled NDR device based on phase transformation. To the best of our knowledge, this report is the first experimental demonstration that NDR can be induced by phase transformation. We believe that the impact of this demonstration is very large, as phase transformation is the most common phenomenon in materials and consequently most materials can be reconsidered as possible candidates for NDR devices. The prototype NDR device is constructed using hydrogen absorbing metal palladium (Pd) thin-wire and the phase transformation from metal-hydride to metal is employed for the demonstration. The observed NDR property shows a strong dependence on the current sweep speed. Also, it exhibits no current polarity dependence. Therefore, the NDR device based on phase transformation is significantly different from typical NDR devices such as tunnel diodes and memristors. The prototype NDR device has been found to be very useful for evaluating the hydrogen storage properties of metals. The advantage of this analysis method is that the storage properties can be acquired just by sweeping the applied current. This demonstration offers novel directions for both the development and utilization of NDR devices.

Magnetic and spin transport properties of a two-dimensional magnetic semiconductor kagome lattice Nb<sub>3</sub>Cl<sub>8</sub> monolayer

Two-dimensional semiconductor materials with intrinsic magnetism have great application prospects in realizing spintronic devices with low power consumption, small size and high efficiency. Some two-dimensional materials with special lattice structures, such as kagome lattice crystals, are favored by researchers because of their novel properties in magnetism and electronic properties. Recently, a new two-dimensional magnetic semiconductor material Nb<sub>3</sub>Cl<sub>8</sub> monolayer with kagome lattice structure was successfully prepared, which provides a new platform for exploring two-dimensional magnetic semiconductor devices with kagome structure. In this work, we study the electronic structure and magnetic anisotropy of Nb<sub>3</sub>Cl<sub>8</sub> monolayer. We also further construct its <i>p-n</i> junction diode and study its spin transport properties by using density functional theory combined with non-equilibrium Green's function method. The results show that the phonon spectrum of the Nb<sub>3</sub>Cl<sub>8</sub> monolayer has no negative frequency, confirming its dynamic stability. The band gap of the spin-down state (1.157 eV) is significantly larger than that of the spin-up state (0.639 eV). The magnetic moment of the Nb<sub>3</sub>Cl<sub>8</sub> monolayer is 0.997 μ<sub>B</sub>, and its easy magnetization axis is in the plane and along the <i>x</i> axis direction based on its energy of magnetic anisotropy. Nb atoms make the main contribution to the magnetic anisotropy. When the strain is applied, the band gap of the spin-down states will decrease, while the band gap of the spin-up state is monotonously decreased from the negative (compress) to positive (tensile) strain. As the strain variable goes from -6% to 6%, the contribution of Nb atoms to the total magnetic moment gradually increases. Moreover, strain causes the easy magnetization axis of the Nb<sub>3</sub>Cl<sub>8</sub> monolayer to flip vertically from in-plane to out-plane. The designed <i>p-n</i> junction diode nanodevice based on Nb<sub>3</sub>Cl<sub>8</sub> monolayer exhibits an obvious rectification effect. In addition, the current in the spin-up state is larger than that in the spin-down state, exhibiting a spin-polarized transport behavior. Moreover, a negative differential resistance (NDR) phenomenon is also observed, which could be used in the NDR devices. These results demonstrate that the Nb<sub>3</sub>Cl<sub>8</sub> monolayer material has great potential application in the next generation of high-performance spintronic devices, and further experimental verification and exploration of this material and related two-dimensional materials are needed.

Magnetic and spin transport properties of a two-dimensional magnetic semiconductor kagome lattice Nb<sub>3</sub>Cl<sub>8</sub> monolayer

Two-dimensional semiconductor materials with intrinsic magnetism have great application prospects in realizing spintronic devices with low power consumption, small size and high efficiency. Some two-dimensional materials with special lattice structures, such as kagome lattice crystals, are favored by researchers because of their novel properties in magnetism and electronic properties. Recently, a new two-dimensional magnetic semiconductor material Nb<sub>3</sub>Cl<sub>8</sub> monolayer with kagome lattice structure was successfully prepared, which provides a new platform for exploring two-dimensional magnetic semiconductor devices with kagome structure. In this work, we study the electronic structure and magnetic anisotropy of Nb<sub>3</sub>Cl<sub>8</sub> monolayer. We also further construct its <em>p-n</em> junction diode and study its spin transport properties by using density functional theory combined with non-equilibrium Green's function method. The results show that the phonon spectrum of the Nb<sub>3</sub>Cl<sub>8</sub> monolayer has no negative frequency, confirming its dynamic stability. The band gap of the spin-down state (1.157 eV) is significantly larger than that of the spin-up state (0.639 eV). The magnetic moment of the Nb<sub>3</sub>Cl<sub>8</sub> monolayer is 0.997 μ<sub>B</sub>, and its easy magnetization axis is in the plane and along the <em>x</em> axis direction based on its energy of magnetic anisotropy. Nb atoms make the main contribution to the magnetic anisotropy. When the strain is applied, the band gap of the spin-down states will decrease, while the band gap of the spin-up state is monotonously decreased from the negative (compress) to positive (tensile) strain. As the strain variable goes from -6% to 6%, the contribution of Nb atoms to the total magnetic moment gradually increases. Moreover, strain causes the easy magnetization axis of the Nb<sub>3</sub>Cl<sub>8</sub> monolayer to flip vertically from in-plane to out-plane. The designed <em>p-n</em> junction diode nanodevice based on Nb<sub>3</sub>Cl<sub>8</sub> monolayer exhibits an obvious rectification effect. In addition, the current in the spin-up state is larger than that in the spin-down state, exhibiting a spin-polarized transport behavior. Moreover, a negative differential resistance (NDR) phenomenon is also observed, which could be used in the NDR devices. These results demonstrate that the Nb<sub>3</sub>Cl<sub>8</sub> monolayer material has great potential application in the next generation of high-performance spintronic devices, and further experimental verification and exploration of this material and related two-dimensional materials are needed.

Three-Dimensional-Topological-Insulator Tunnel Diodes

Topological insulators (TIs) open up many avenues for designing future electronic devices. Using the Bardeen transfer Hamiltonian method, we calculate the current density of electron tunneling between two slabs of $\mathrm{Bi}$${}_{2}$$\mathrm{Se}$${}_{3}$. We calculate the three-dimensional TI tunnel-diode current-voltage (J-V) characteristics for different doping concentrations, tunnel-barrier heights and thicknesses, and 3D-TI band gaps. The difference in the Fermi levels of the slabs determines the peak and valley voltages. The tunnel-barrier width and height affect the magnitude of the current without affecting the shape of the $J$-$V$ characteristics. The band gap of the 3D TI determines the magnitude of the tunnel current, albeit at a lesser rate than the tunnel-barrier potential; thus the device characteristics are robust under changing TI material. The high peak-to-valley ratio of 3D-TI tunnel diodes, the controllability of the valley-current location, and the simple construction provide advantages over other negative-differential resistance devices.

Low-Power Negative-Differential-Resistance Device for Sensing the Selective Protein via Supporter Molecule Engineering.

Van der Waals (vdW) heterostructures composed of atomically thin two-dimensional (2D) materials have more potential than conventional metal-oxide semiconductors because of their tunable bandgaps, and sensitivities. The remarkable features of these amazing vdW heterostructures are leading to multi-functional logic devices, atomically thin photodetectors, and negative differential resistance (NDR) Esaki diodes. Here, an atomically thin vdW stacking composed of p-type black arsenic (b-As) and n-type tin disulfide (n-SnS2 ) to build a type-III (broken gap) heterojunction is introduced, leading to a negative differential resistance device. Charge transport through the NDR device is investigated under electrostatic gating to achieve a high peak-to-valley current ratio (PVCR), which improved from 2.8 to 4.6 when the temperature is lowered from 300 to 100K. At various applied-biasing voltages, all conceivable tunneling mechanisms that regulate charge transport are elucidated. Furthermore, the real-time response of the NDR device is investigated at various streptavidin concentrations down to 1pm, operating at a low biasing voltage. Such applications of NDR devices may lead to the development of cutting-edge electrical devices operating at low power that may be employed as biosensors to detect a variety of target DNA (e.g., ct-DNA) and protein (e.g., the spike protein associated with COVID-19).

Negative Differential Resistance in Oxygen-ion Conductor Yttria-stabilized Zirconia for Extreme Environment Electronics.

Oxygen-ion conductors have traditionally been studied in the context of high temperature (≈ 873 to 1773 K) energy conversion and sensor technologies. However, there is growing interest in exploring ion-based electronics for harsh environments (400 to 573 K) that represents an emerging field. Here, we utilize a blocking electrode to modify the interface properties of oxygen-ion conducting yttria-stabilized zirconia (YSZ) thin film electrochemical cells. The modified YSZ cell exhibits negative differential resistance (NDR) in the current-voltage curves at 543 K in the air. A double-sweep method and analysis of the scan-rate dependence of the j-V characteristics clearly suggest that the NDR behavior is formed by the reduction reaction of adsorbed oxygen or platinum oxide at the YSZ/Pt interface. A stable and switchable YSZ NDR device is realized with a high peak-to-valley current ratio of 5.8 at 543 K. Utilizing the NDR effect, we demonstrate a proof-of-concept switchable ternary inverter by interfacing with a silicon transistor. Oxygen-ion conductors and their interfaces offer new directions to design electronics for extreme environments.

Evolution of Electrical Transport Property in Ge‐Based Negative Differential Resistance Devices under Pulsed High Magnetic Field

Negative differential resistance (NDR) effect has its research significance and application value. However, the evolution of the NDR under magnetic fields (especially ultrahigh magnetic fields) is rarely reported and unclear. Herein, the electrical transport properties of the Ge‐based devices of Ag/p‐Ge:Ga/Ag are investigated. In these devices, the NDR behavior is observed from 77 to 300 K, which is mainly related to the minority injection effect. Under static magnetic field conditions, the NDR is effectively enhanced and presented with geometrical‐related anisotropy. Using a 50 T pulsed high magnetic field, the evolution of the NDR is further investigated at 300 K, and an unusual NDR is observed in a high field region due to stronger suppression of local impact ionization processes. This investigation results help to predict the performance evolution of the prospective NDR device in an ultrahigh‐magnetic‐field environment.

Negative Differential Resistance Effect in “Cold” Metal Heterostructure Diodes

Negative differential resistance (NDR) devices are significant for logic, memory and radiofrequency applications. Herein, we study the electronic and quantum transport properties of &#x201C;cold&#x201D; metals 2H MX₂ (M &#x003D; Nb, Ta; X &#x003D; S, Se) and their heterojunction (HJ) NDR diodes. Owing to the energy gaps of such 2H MX₂ close to the Fermi level, the broken-gap structure can be formed by the MSe₂/MS₂ HJs. A favorable peak current thus is achieved benefitting from the large conductivity of metallic 2H MSe₂/MS₂ HJs. The promising peak-valley ratio PVR (51) and peak current (<inline-formula> <tex-math notation="LaTeX">$5.1\times 10^{4} \mu \text{A}/\mu \text{m}$ </tex-math></inline-formula>) is obtained by edge contact NbSe₂/NbS₂ HJ NDR device. The study of &#x201C;cold&#x201D; metal NDR performance provides a practical solution for NDR devices to achieve desired PVR and peak currents simultaneously.

Voltage-programmable negative differential resistance in memristor of single-crystalline lithium niobate thin film

Negative differential resistance (NDR) in memristor has attracted considerable attention due to its nonlinear dynamic characteristic accompanied by resistive switching behavior. Here, we demonstrated the voltage-programmable NDR effect in an Au/LNO/Pt memristor based on a single-crystalline lithium niobate (SC-LNO) thin film tuned by low-energy Ar+ irradiation. A typical N-Shape NDR behavior occurs in reverse bias and can be programmed by changing the positive sweeping voltage. Moreover, thickness-dependent of the NDR behavior was also investigated. Thanks to the merit of the SC-LNO thin film, our memristor reveals excellent uniformity and reproducibility with low cycle-to-cycle variation (down to 1.82% for Ipeak and 2.94% for Vvalley). The carrier transport mechanism of our device is attributed to the interplay of trap-controlled space-charge-limited conduction (SCLC) and the Fowler–Nordheim (FN) tunneling. The transition from bulk-limited conduction (SCLC) to interfacial one (FN) tuned by Ar+ irradiation is crucial for our NDR devices.

High performance and gate-controlled GeSe/HfS2 negative differential resistance device.

Transition metal dichalcogenides (TMDs) have received significant attention owing to their thickness-dependent folded current–voltage (Ids–Vds) characteristics, which offer various threshold voltage values. Owing to these astonishing characteristics, TMDs based negative differential resistance (NDR) devices are preferred for the realization of multi-valued logic applications. In this study, an innovative and ground-breaking germanium selenide/hafnium disulfide (p-GeSe/n-HfS2) TMDs van der Waals heterostructure (vdWH) NDR device is designed. An extraordinary peak-to-valley current ratio (≈5.8) was estimated at room temperature and was used to explain the tunneling and diffusion currents by using the tunneling mechanism. In addition, the p-GeSe/n-HfS2 vdWH diode was used as a ternary inverter. The TMD vdWH diode, which can exhibit different band alignments, is a step forward on the road to developing high-performance multifunctional devices in electronics.

First-principle investigations of cove edged GaN nanoribbon for nanoscale resonant tunneling applications

This work investigates the impact of cove edges in gallium nitride nanoribbons (GaNNRs) as cove edges nanoribbons are energetically more stable and facilitates further tunability of electronic properties of nanoribbons. Here structural, electronic, and transport properties of cove edged GaNNRs with hydrogen (H) passivation are investigated. For this investigation, the framework of non-equilibrium Green function (NEGF) formalism based on density functional theory (DFT) has been deployed. The effect of cove edge at nitrogen (N), gallium (Ga), and at both the edges for its potential ultra-scaled device applications are studied. As compared to the pristine semiconducting nature of H–GaN–H, present DFT-based calculations of cove edged GaNNRs exhibit a metallic nature via selective H-passivation. A comparative study of binding energy (Eb) revealed that the C–GaN–H nanoribbon is structurally more stable irrespective of the width in all considered cove edged GaNNRs. Interestingly, the proposed two-terminal cove edged GaNNRs devices exhibit negative differential resistance (NDR) effect based on selective edge passivation with hydrogen atoms. The observed NDR behavior suggests that cove edged GaNNRs with selective H-passivated GaNNRs have immense potential applications for preparing nanoscale NDR devices.

Gate-Tunable Negative Differential Resistance Behaviors in a hBN-Encapsulated BP-MoS2 Heterojunction.

Two-dimensional (2D) heterostructures show great potential in achieving negative differential resistance (NDR) effects by Esaki diodes and or resonant tunneling diodes. However, most of the reported Esaki diode-based NDR devices realized by bulk 2D films lack sufficient gate tunability, and the tuning of NDR behavior from appearing to vanishing remains elusive. Here, a gate-tunable NDR device is reported based on a vertically stacked black phosphorus (BP) and molybdenum disulfide (MoS2) thin 2D heterojunction. At room temperature, a rectifying ratio of ∼6 orders of magnitude from a reverse rectifying diode to a forward rectifying diode by gate modulation is obtained. Through analyzing the temperature-dependent electrical properties, the tunneling mechanism at a certain gate voltage range is revealed. Moreover, the switchable and continuously gate-tunable NDR behavior is realized with a maximum peak-to-valley ratio of 1.23 at 77 K, as shown in the IDS mappings by sweeping VDS under different VGS. In addition, a compact model for gate-tunable NDR behavior in 2D heterostructures is proposed. To our best knowledge, this is the first demonstration of NDR behavior in BP-MoS2 heterostructures. Consequently, this work sheds light on the gate-tunable NDR devices and reconfigurable logic devices for realizing ternary and reconfigurable logic systems.

Unprecedentedly Uniform, Reliable, and Centimeter-Scale Molybdenum Disulfide Negative Differential Resistance Photodetectors.

Negative differential resistance (NDR) can be applied to various devices such as reflection amplifiers, relaxation oscillators, and neuromorphic devices. However, the development of NDR photodetectors with uniformity, stability, and reproducibility for use in practical applications is still lacking. Herein, we demonstrate highly reliable NDR photodetectors by constructing a MoS2/p-Si heterostructure. Owing to the formation of a MoS2 layer with uniform thickness by the plasma-enhanced sulfurization process, a 100% yield with high uniformity (peak-to-valley ratio = 1.195 ± 0.065) was achieved for 120 devices. Furthermore, the proposed NDR photodetectors exhibit unprecedented high cycle-to-cycle endurance, which maintains their NDR characteristics through 100 000 consecutive sweeps without operational failure. This work paves the way for the development of a reliable NDR device and reports unprecedented results of high uniformity, reproducibility, and robustness for practical applications.