Abstract
Transition metal dichalcogenides (TMDs) have received significant attention owing to their thickness-dependent folded current–voltage (Ids–Vds) characteristics, which offer various threshold voltage values. Owing to these astonishing characteristics, TMDs based negative differential resistance (NDR) devices are preferred for the realization of multi-valued logic applications. In this study, an innovative and ground-breaking germanium selenide/hafnium disulfide (p-GeSe/n-HfS2) TMDs van der Waals heterostructure (vdWH) NDR device is designed. An extraordinary peak-to-valley current ratio (≈5.8) was estimated at room temperature and was used to explain the tunneling and diffusion currents by using the tunneling mechanism. In addition, the p-GeSe/n-HfS2 vdWH diode was used as a ternary inverter. The TMD vdWH diode, which can exhibit different band alignments, is a step forward on the road to developing high-performance multifunctional devices in electronics.
Highlights
The nano devices based on 2D-transition metal dichalcogenides (TMDs) van der Waals heterostructure (vdWH) have been efficiently used in FETs,[28] sensors,[29] data storage devices,[30] photodetectors,[31,32,33,34] integrated circuits,[35] energy storage,[36] ampli ers,[37] inverters,[38] spin- eld effect transistors,[39] water splitting,[40] and diodes.[38,41]
The n-type HfS2 was transferred onto the GeSe to form the vdWHs
A er successfully designing the GeSe/HfS2 TMDs vdWH negative differential resistance (NDR) device, the electrical measurement was performed at room temperature
Summary
Black phosphorus (BP) and molybdenum ditelluride (MoTe2) have been widely used in high-performance devices because of their thickness-dependent bandgap and work function, large hole charge carrier densities, and unexpected mobility. The nano devices based on 2D-TMDs vdWHs have been efficiently used in FETs,[28] sensors,[29] data storage devices,[30] photodetectors,[31,32,33,34] integrated circuits,[35] energy storage,[36] ampli ers,[37] inverters,[38] spin- eld effect transistors,[39] water splitting,[40] and diodes.[38,41] Heterostructures and homojunction type devices have been designed by the doping of TMDs materials (chemically and electrostatically), and Fermi-level pinning These techniques are not suitable for use in a high-performance device. These high gate-modulated NDR characteristics, with an extraordinary peak-to-valley current, represent an outstanding potential in electronics, which are likely to be essential when developing highly efficient multi-valued logic applications
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