Native Oxide Research Articles

Native Silicon Oxide Properties Determined by Doping.

The physico-chemical properties of native oxide layers, spontaneously forming on crystalline Si wafers in air, can be strictly correlated to the dopant type and doping level. In particular, our investigations focused on oxide layers formed upon air exposure in a clean room after Si wafer production, with dopant concentration levels from ≈1013 to ≈1019 cm-3. In order to determine these correlations, we studied the surface, the oxide bulk, and its interface with Si. The surface was investigated using the contact angle, thermal desorption, and atomic force microscopy measurements which provided information on surface energy, cleanliness, and morphology, respectively. Thickness was measured with ellipsometry and chemical composition with X-ray photoemission spectroscopy. Electrostatic charges within the oxide layer and at the Si interface were studied with Kelvin probe microscopy. Some properties such as thickness, showed an abrupt change, while others, including silanol concentration and Si intermediate-oxidation states, presented maxima at a critical doping concentration of ≈2.1 × 1015 cm-3. Additionally, two electrostatic contributions were found to originate from silanols present on the surface and the net charge distributed within the oxide layer. Lastly, surface roughness was also found to depend upon dopant concentration, showing a minimum at the same critical dopant concentration. These findings were reproduced for oxide layers regrown in a clean room after chemical etching of the native ones.

Photoswitching effect of graphene photogated diodes with interfacial layers

Graphene/semiconductor heterojunction-based photodetectors are expected to achieve high performance in various wavelength regions. Graphene photogated diodes (GPDs) based on such heterojunctions are promising for the fabrication of high-performance photodetectors, which cannot be achieved using conventional technologies. However, their action mechanism has not yet been theoretically demonstrated. In this study, we investigated the mechanism of GPDs with and without an interfacial layer. We demonstrated that the thin interfacial native oxide layer is responsible for the reduction in the Fermi level induced by photogating, which is similar to “photoswitching.” This effect induces an extraordinarily large output current in GPDs with a barrier layer.

Ferroelectric Al1−xBxN thin films integrated on Si

Ferroelectric Al0.93B0.07N thin films are prepared (100) Si substrates. The necessary c-axis out-of-plane orientation to observe macroscopic ferroelectric switching was achieved by implementing an initial Ar/N2 plasma treatment, followed by a thin layer of AlN to initiate the desired texture and a 150 nm W layer. The plasma treatment facilitates crystallinity enhancement of the AlN template layer, allowing for subsequent growth of highly oriented W and Al0.93B0.07N layers. The W layer exhibits random in-plane orientation and exclusive (110) out-of-plane orientation with a rocking curve width of 1.4°. When grown on these W surfaces, 175 nm thick Al0.93B0.07N films exhibit random in-plane orientation and exclusive (001) texture with rocking curve full-width-half-max values of 1.6° and RMS roughness values less than 1 nm. Polarization hysteresis measurements show robust hysteresis with coercive field values of 5.4 MV/cm and remanent polarization values of 136 μC/cm2. XPS depth profile analysis suggests that the plasma treatment converts the existing native oxide to a nitrogen rich oxynitride with approximate composition Si3O0.5N3.67. Cross-sectional TEM reveals that the oxynitride interlayer is amorphous and ∼3.4 nm thick, more than double the native oxide thickness measured by multiwavelength ellipsometry, implying that (oxy)nitride growth continues after conversion of the native oxide. This new family of ferroelectric wurtzites is interesting from an integration perspective given their chemical compatibility with mainstream semiconductors. Developing synthesis routes that promote needed texture while preserving compatible processing windows is an important step toward practical integration.

Photocatalytic Performance of Sol-Gel Prepared TiO2 Thin Films Annealed at Various Temperatures.

Titanium dioxide (TiO2) in the form of thin films has attracted enormous attention for photocatalysis. It combines the fundamental properties of TiO2 as a large bandgap semiconductor with the advantage of thin films, making it competitive with TiO2 powders for recycling and maintenance in photocatalytic applications. There are many aspects affecting the photocatalytic performance of thin film structures, such as the nanocrystalline size, surface morphology, and phase composition. However, the quantification of each influencing aspect needs to be better studied and correlated. Here, we prepared a series of TiO2 thin films using a sol-gel process and spin-coated on p-type, (100)-oriented silicon substrates with a native oxide layer. The as-deposited TiO2 thin films were then annealed at different temperatures from 400 °C to 800 °C for 3 h in an ambient atmosphere. This sample synthesis provided systemic parameter variation regarding the aspects mentioned above. To characterize thin films, several techniques were used. Spectroscopic ellipsometry (SE) was employed for the investigation of the film thickness and the optical properties. The results revealed that an increasing annealing temperature reduced the film thickness with an increase in the refractive index. Atomic force microscopy (AFM) was utilized to examine the surface morphology, revealing an increased surface roughness and grain sizes. X-ray diffractometry (XRD) and UV-Raman spectroscopy were used to study the phase composition and crystallite size. The annealing process initially led to the formation of pure anatase, followed by a transformation from anatase to rutile as the annealing temperature increased. An overall enhancement in crystallinity was also observed. The photocatalytic properties of the thin films were tested using the photocatalytic decomposition of acetone gas in a home-built solid (photocatalyst)-gas (reactant) reactor. The composition of the gas mixture in the reaction chamber was monitored using in situ Fourier transform infrared spectroscopy. Finally, all of the structural and spectroscopic characteristics of the TiO2 thin films were quantified and correlated with their photocatalytic properties using a correlation matrix. This provided a good overview of which film properties affect the photocatalytic efficiency the most.

High-temperature interactions of liquid magnesium with a pure copper substrate

For the first time, experimental results of the high-temperature interaction of liquid magnesium with pure copper are presented. The investigation was performed using the sessile drop method and capillary purification procedure allowing both non-contact heating of the Mg/Cu couple and in situ cleaning of the Mg drop from a native oxide film. The test was done under isothermal conditions at 710 °C in a protective atmosphere, which was a mixture of Ar + 5 wt% H2.The images of the Mg/Cu couple collected during the high-temperature measurements were used to determine the time-dependent values of the contact angle (θ) formed between the liquid magnesium drop and the copper substrate.The solidified couple was subjected to detailed microstructural observations by scanning electron microscopy (SEM) and transmission electron microscopy (TEM), both coupled with energy-dispersive X-ray spectroscopy (EDS).Under the applied measurement conditions, immediately after contact with the Cu substrate, the liquid Mg drop showed a very good wetting (θ0 ∼ 22°), followed by rapid spreading over the substrate, forming a final contact angle θf ∼ 11°. However, SEM/EDS analysis revealed that θf is an apparent angle due to the deep crater (∼200 μm) formed in the substrate under the Mg drop by the dissolution of Cu in liquid Mg.The comparative SEM/TEM/EDS analysis suggests that good wetting and rapid spreading in the Mg/Cu couple are dominated by the reactive wetting mechanism due to the dissolution of the Cu substrate in the liquid Mg drop and its saturation with a high amount of dissolved Cu. Consequently, the microstructure of the solidified drop was composed of large Cu-rich primary MgCu2 crystals surrounded with a two-phase eutectic mixture (MgCu2 + Mg2Cu) formed at the final stage of cooling. In addition, the MgCu2 phase was also nucleated and grown at the Mg/Cu interface to form a continuous layer.

Wet Chemical Treatment and Mg Doping of p‐InP Surfaces for Ohmic Low‐Resistive Metal Contacts

Manufacturing a low‐resistive Ohmic metal contact on p‐type InP crystals for various applications is a challenge because of the Fermi‐level pinning via surface defects and the diffusion of p‐type doping atoms in InP. Development of wet‐chemistry treatments and nanoscale control of p‐doping for InP surfaces is crucial for decreasing the device resistivity losses and durability problems. Herein, a proper combination of HCl‐based solution immersion, which directly provides an unusual wet chemical‐induced InP(100)c(2 × 2) atomic structure, and low‐temperature Mg‐surface doping of the cleaned InP before Ni‐film deposition is demonstrated to decrease the contact resistivity of Ni/p‐InP by the factor of 10 approximately as compared to the lowest reference value without Mg. Deposition of the Mg intermediate layer on p‐InP and postheating of Mg/p‐InP at 350 °C, both performed in ultrahigh‐vacuum (UHV) chamber, lead to intermixing of Mg and InP elements according to X‐ray photoelectron spectroscopy. Introducing a small oxygen gas background (O2 ≈ 10−6 mbar) in UHV chamber during the postheating of Mg/p‐InP enhances the indium outdiffusion and provides the lowest contact resistivity. Quantum mechanical simulations indicate that the presence of InP native oxide or/and metal indium alloy at the interface increases In diffusion.

Controlling the surface silanol density in capillary columns and planar silicon via the self-limiting, gas-phase deposition of tris(dimethylamino)methylsilane, and quantification of surface silanols after silanization by low energy ion scattering

Surface silanols (Si-OH) play a vital role on fused silica surfaces in chromatography. Here, we used an atmospheric-pressure, gas-phase reactor to modify the inner surface of a gas chromatography, fused silica capillary column (0.53 mm ID) with a small, reactive silane (tris(dimethylamino)methylsilane, TDMAMS). The deposition of TDMAMS on planar witness samples around the capillary was confirmed with X-ray photoelectron spectroscopy (XPS), ex situ spectroscopic ellipsometry (SE), and wetting. The number of surface silanols on unmodified and TDMAMS-modified native oxide-terminated silicon were quantified by tagging with dimethylzinc (DMZ) via atomic layer deposition (ALD) and counting the resulting zinc atoms with high sensitivity-low energy ion scattering (HS-LEIS). A bare, clean native oxide – terminated silicon wafer has 3.66 OH/nm2, which agrees with density functional theory (DFT) calculations from the literature. After TDMAMS modification of native oxide-terminated silicon, the number of surface silanols decreases by a factor of ca. 10 (to 0.31 OH/nm2). Intermediate surface testing (IST) was used to characterize the surface activities of functionalized capillaries. It suggested a significant deactivation/passivation of the capillary with some surface silanols remaining; the modified capillary shows significant deactivation compared to the native/unmodified fused silica tubing. We believe that this methodology for determining the number of residual silanols on silanized fused silica will be enabling for chromatography.

2D Amorphous GaOX Gate Dielectric for β-Ga2O3 Field-Effect Transistors.

Appropriate gate dielectrics must be identified to fabricate metal-insulator-semiconductor field-effect transistors (MISFETs); however, this has been challenging for compound semiconductors owing to the absence of high-quality native oxides. This study uses the liquid-gallium squeezing technique to fabricate 2D amorphous gallium oxide (GaOX) with a high dielectric constant, where its thickness is precisely controlled at the atomic scale (monolayer, ∼4.5 nm; bilayer, ∼8.5 nm). Beta-phase gallium oxide (β-Ga2O3) with an ultrawide energy bandgap (4.5-4.9 eV) has emerged as a next-generation power semiconductor material and is presented here as the channel material. The 2D amorphous GaOX dielectric is combined with a β-Ga2O3 conducting nanolayer, and the resulting β-Ga2O3 MISFET is stable up to 250 °C. The 2D amorphous GaOX is oxygen-deficient, and a high-quality interface with excellent uniformity and scalability forms between the 2D amorphous GaOX and β-Ga2O3. The fabricated MISFET exhibits a wide gate-voltage swing of approximately +5 V, a high current on/off ratio, moderate field-effect carrier mobility, and a decent three-terminal breakdown voltage (∼138 V). The carrier transport of the Ni/GaOX/β-Ga2O3 metal-insulator-semiconductor (MIS) structure displays a combination of Schottky emission and Fowler-Nordheim (F-N) tunneling in the high-gate-bias region at 25 °C, whereas at elevated temperatures it shows Schottky emission and F-N tunneling in the low- and high-gate-bias regions, respectively. This study demonstrates that a 2D GaOX gate dielectric layer can be produced and incorporated into an active channel layer to form an MIS structure at room temperature (∼25 °C), which enables the facile fabrication of MISFET devices.

Thermal Instability of Gold Thin Films

The disintegration of a continuous metallic thin film leads to the formation of isolated islands, which can be used for the preparation of plasmonic structures. The transformation mechanism is driven by a thermally accelerated diffusion that leads to the minimalization of surface free energy in the system. In this paper, we report the results of our study on the disintegration of gold thin film and the formation of nanoislands on silicon substrates, both pure and with native silicon dioxide film. To study the processes leading to the formation of gold nanostructures and to investigate the effect of the oxide layer on silicon diffusion, metallic film with a thickness of 3 nm was deposited by molecular beam epitaxy (MBE) technique on both pure and oxidized silicon substrates. Transformation of the thin film was observed by low-energy electron microscopy (LEEM) and a scanning electron microscope (SEM), while the nanostructures formed were observed by atomic force microscope (AFM) method. Structural investigations were performed by low-energy electron diffraction (LEED) and X-ray photoelectron spectroscopy (XPS) methods. Our experiments confirmed a strong correlation between the formation of nanoislands and the presence of native oxide on silicon substrates.

Effect of atomic layer annealing in plasma-enhanced atomic layer deposition of aluminum nitride on silicon

The effect of adding an atomic layer annealing step to a plasma-enhanced atomic layer deposition process of aluminum nitride was investigated with commonly available materials. The refractive index, crystallinity, stoichiometry, and impurity concentrations were studied from films grown from trimethylaluminum and ammonia precursors at 300°C on Si(111) substrates. Additional energy provided by the atomic layer annealing step during each deposition cycle was found to enhance the crystallinity and stoichiometry and increase the refractive index and film density. A polycrystalline hexagonal film with a weak c-axis orientation was obtained on substrates with and without native oxide, which is promising for applications that require high quality films at low temperatures.

Ultrahigh porosity photoluminescent silicon aerocrystals with greater than 50% nanocrystal ensemble quantum yields

Three types of mesoporous silicon flakes were fabricated by anodization in methanoic hydrofluoric acid from the same substrates (heavily doped p-type). Even though anodization current density, rinsing, drying method, and storage condition were the same for all three wafers, the resulting porous silicon (PSi) structures had very different properties. They had very different colors. Two of them showed quite high luminescence quantum yields (QYs), confirmed by very long luminescence lifetimes. The highest QY exceeded 50% for a peak photoluminescence wavelength of ∼750 nm. To date, this QY is the highest obtained for PSi and very importantly for silicon with large mesopores, which is typically not highly efficient (as opposed to silicon with small mesopores and microporous silicon). Large mesopores (>15 nm diameter) facilitate impregnation of various substances into luminescent material, such as metals for plasmonics and drugs for theranostics. The differing luminescent properties were correlated to electrolyte temperature during anodization, and evolution of the electrolyte batch (lowering of active fluoride content and buildup of hexafluorosilicate) used to anodize several wafers, whose effects are often overlooked when mass-producing PSi. Supercritical drying and completion of the slow growth of native oxide passivation in the dark leading to different final partially oxidized PSi structures are also important factors for the high QYs obtained. The highest QY was obtained with the structure having the most isolated Si nanocrystals in an amorphous Si oxide tissue.

Engineering of niobium surfaces through accelerated neutral atom beam technology for quantum applications

A major roadblock to scalable quantum computing is phase decoherence and energy relaxation caused by qubits interacting with defect-related two-level systems (TLSs). Native oxides present on the surfaces of superconducting metals used in quantum devices are acknowledged to be a source of TLS that decrease qubit coherence times. Reducing microwave loss by “surface engineering” (i.e., replacing the uncontrolled native oxide of superconducting metals with a thin, stable surface with predictable characteristics) can be a key enabler for pushing performance forward with devices of higher intrinsic quality factor. In this work, we present a novel approach to replace the native oxide of niobium (typically formed in an uncontrolled fashion when its pristine surface is exposed to air) with an engineered oxide, using a room-temperature process that leverages accelerated neutral atom beam (ANAB) technology at 300 mm wafer scale. This ANAB is composed of a mixture of argon and oxygen, with tunable energy per atom, which is rastered across the wafer surface. The ANAB-engineered Nb-oxide thickness was found to vary from 2 to 6 nm depending on ANAB process parameters. The modeling of variable-energy x-ray photoelectron spectroscopy data confirms the thickness and compositional control of Nb surface oxide by the ANAB process. These results correlate well with those from transmission electron microscopy and x-ray reflectometry. Since ANAB is broadly applicable to material surfaces, the present study indicates its promise for modification of the surfaces of superconducting quantum circuits to achieve longer coherence times.

Evolution of surface recombination property of silicon wafers during laser irradiation by differential photocarrier radiometry

Understanding the surface recombination property of semiconductor materials is beneficial for improving the performance of optoelectronic devices. In this paper, differential photocarrier radiometry (PCR) is carried out to investigate the evolution of the surface recombination velocities of silicon wafers induced by laser irradiation. The PCR signal and the surface recombination velocities were found to be strongly dependent on the quality of the wafer surface and the duration of laser irradiation. The native oxide surface was more susceptible to laser irradiation than the Al2O3 passivated surface due to more surface defects being annealed. A surface-defect annealing model was used to explain the transient behavior of the PCR signal and the surface recombination velocity.

Adsorption of 2-Mercaptobenzothiazole Organic Inhibitor and its Effects on Copper Anodic Oxidation in Alkaline Environment

The adsorption of 2-MBT organic inhibitor on copper and its effects on anodic oxide growth in NaOH were investigated using cyclic voltammetry, X-ray photoelectron spectroscopy, and time-of-flight secondary ion mass spectrometry techniques. It is shown that 2-MBT significantly impedes the growth of the Cu(I) oxide by forming a multilayered organic film on the surface. A major factor influencing the formation and properties of the organic barrier layer is the presence and structure of the interfacial native oxide on which it forms. The 2-MBT multilayer bonds to the metallic copper substrate mostly via its sulphur atoms along with a small fraction of the nitrogen atoms also bonding to the metallic substrate. Additionally, there is an interaction between the inhibitor molecules and copper released from the surface to form metal-organic complexes in the outer layers of the thicker films.

Density control of GaN nanowires at the wafer scale using self-assembled SiN x patches on sputtered TiN(111)

The self-assembly of heteroepitaxial GaN nanowires using either molecular beam epitaxy (MBE) or metal-organic vapor phase epitaxy (MOVPE) mostly results in wafer-scale ensembles with ultrahigh (>10 μm−2) or ultralow (<1 μm−2) densities, respectively. A simple means to tune the density of well-developed nanowire ensembles between these two extremes is generally lacking. Here, we examine the self-assembly of SiN x patches on TiN(111) substrates which are eventually acting as seeds for the growth of GaN nanowires. We first found that if prepared by reactive sputtering, the TiN surface is characterized by {100} facets for which the GaN incubation time is extremely long. Fast GaN nucleation is only obtained after deposition of a sub-monolayer of SiN x atoms prior to the GaN growth. By varying the amount of pre-deposited SiN x , the GaN nanowire density could be tuned by three orders of magnitude with excellent uniformity over the entire wafer, bridging the density regimes conventionally attainable by direct self-assembly with MBE or MOVPE. The analysis of the nanowire morphology agrees with a nucleation of the GaN nanowires on nanometric SiN x patches. The photoluminescence analysis of single freestanding GaN nanowires reveals a band edge luminescence dominated by excitonic transitions that are broad and blue shifted compared to bulk GaN, an effect that is related to the small nanowire diameter and to the presence of a thick native oxide. The approach developed here can be principally used for tuning the density of most III–V semiconductors nucleus grown on inert surfaces like 2D materials.

Native oxide film powered corrosion protection of underlying Pb-free Sn solder substrate

The development of new Pb-free Sn-based solder alloys in the packaging industry increasingly focuses on corrosion resistance enhancing. In this work, the positive effect by surface native oxide film in postponing the solder substrate degradation has been identified, and besides the corrosion resistance of native oxide film varies greatly on different compositional phases in the substrate. It is suggested that obtaining a corrosion-resistant native oxide film is one promising method in improving the corrosion resistance of solder alloys, and thus small additions of elements, prone to form a passivated native oxide film, are preferentially of interest.

Experimental demonstration of the strong impact of plasma excitation frequency range on electronic properties of silicon nitride/GaAs interfaces

Passivation/encapsulation of III–V electronic and photonic circuits and devices is often performed using plasma-enhanced chemical vapor deposited SixNy with a standard high frequency excitation of 13.56 MHz. The hypothesis of a possible higher passivation process efficiency for low frequency SixNy deposition on GaAs has been suggested by comparison with published work on high frequency. In this work, we report a direct experimental demonstration of the effect of the RF plasma source frequency on electronic properties of GaAs/SixNy interfaces during a passivation process. GaAs substrates from the same wafer are processed in the same reactor using the same plasma conditions except for the plasma excitation frequency and MIS structures are fabricated to probe interface electronic properties. Comparing interfaces obtained with a plasma source frequency below or over the ion transit frequency (∼ 2 MHz) shows drastic difference in electrical behavior. While Fermi level is pinned when a high frequency plasma (13.56 MHz) is used, a good modulation of surface potential is observed with a low frequency plasma (380 kHz), indicating an interface states density lower by orders of magnitude. X-ray photoelectron spectra analysis is performed in order to investigate GaAs/SixNy interface formation in relation with plasma excitation frequency. We show that a short exposure to the low frequency plasma results in the almost complete removal of native oxides species. To the contrary, a significant amount of oxides remains on structures treated by the high frequency technique. The low frequency plasma technique could be a better alternative to the standard high frequency, as it is less reliant on wet chemical treatments like ammonium sulfide passivation and could allow for processing at lower temperatures.

Simulation of Native Oxide‐Passivated CsSn0.5Ge0.5I3 Highly Stable Lead‐Free Inorganic Perovskite Solar Cell

The search for a lead‐free, nontoxic, highly stable perovskite phase could end at the native oxide‐passivated composition of CsSn0.5Ge0.5I3. Mainly its remarkable stability is due to a thin native oxide layer (Sn‐doped GeO2) formation over CsSn0.5Ge0.5I3, which suppresses the Sn2+ oxidation to Sn+4. Herein, the performance of this mixed Sn–Ge perovskite and the role of native oxide is analyzed. The experimental device with 7% efficiency is numerically replicated, utilizing reasonable device configuration, material parameters, and defect model. The low efficiency of CsSn0.5Ge0.5I3 is due to high bulk defects. The simulation result shows that Sn oxidation suppressing the native oxide layer imparts stability but does not significantly impact device efficiency. The optimization provides passivated design for absorbers with high bulk defects. Low thickness at high defect density is preferable, and higher thickness at lower defect density is optimal for device design. The final optimized device achieves an efficiency of 21%. The results summarized here can provide a guideline for high‐efficiency, lead‐free, nontoxic stable perovskite solar cells.

The spatial structures of iron oxide formed on an ordered Pt(111) electrode in pH 3 sulfate and chloride media

Platinum (Pt) electrodes modified with iron (Fe) have been used as electrocatalysts to split water, to reduce oxygen, and to oxidize methanol. The current study employed cyclic voltammetry and in situ scanning tunneling microscopy (STM) to probe the redox chemistry and spatial structure of an iron hydroxide thin film adsorbed on an ordered Pt(111) electrode in pH 3 sulfate solution (1 mM H2SO4 + 0.1 M K2SO4) containing 10 mM FeSO4. The Pt(111) electrode was pretreated with the conventional annealing-and-quenching method, which resulted in a sub-monolayer native oxide. After this native oxide was stripped off, the adsorption of Fe2+ ions and the reduction of oxygen concurred to yield an ordered FeOH film on the Pt(111) electrode. In situ STM imaging revealed a unique spoke – wheel (SW) structure between 0.1 and -0.1 V (vs. Ag/AgCl). As opposed to the hexagonal FeO(111) bilayer structure observed on Pt(111) in the vacuum, a distorted hexagonal adlattice was seen with this SW pattern. Shifting the potential positively and negatively resulted in transformations of the SW structure into distorted moiré patterns. The same STM experiment performed with Fe2(SO4)3 led to a disordered film, indicating that ferrous, not ferric, ions were orderly adsorbed on the Pt(111) electrode. The role of anion in the formation of the FeOH film on the Pt(111) electrode was also conducted in pH 3 chloride solution (1 mM HCl + 0.1 M KCl + FeCl2).

AlGe wafer bonding in ultra-high vacuum environment

Despite it being known that native oxides impair diffusion processes during eutectic wafer bonding, the possibility of oxide removal combined with avoidance of oxide regrowth on the surfaces is not usually employed in AlGe eutectic wafer bonding. In the present work, the focus is on the impact of different process parameters like temperature, concentration, and oxide regrowth on the AlGe bonding layer, while processing inside ultra-high vacuum. Based on the results, it could be shown that the in situ AlGe eutectic bonding process enables acceptable bonding results already below the eutectic temperature Te = 423 °C, which would be required to liquefy the AlGe bonding layer at the eutectic concentration ce = 28.4 at. % Ge. Even if the AlGe system was not entering the liquid state, solid-state diffusion is sufficient to achieve a high bonding quality. The applied bonding force corresponds to a pressure of ∼0.16 MPa, which is much lower compared to the typical (ex situ) AlGe bonding process. In addition, it could be clarified that extreme variations of concentrations below and above ce were not as critical as expected. A good phase mixture as well as a low number of voids has been observed even if the resulting concentration did not fit ce. The main feature of the bonding system, which is oxide removal while suppressing the oxide re-growth, enhanced the quality of bonding result compared to the regular ex situ eutectic bonding approach.