An electron transport through the extremely small gaps (1–5 nm wide) formed in narrow and thin gold nanowires by the electromigration method is studied in this work at various temperatures. A careful investigation of the final stage of a gap formation has shown a quantum character of a nanowire conductivity on this stage. Analysis of the electron transport characteristics through the resulting gaps was carried out. It shows that regimes of both a direct tunneling between electrodes and a “cold” emission into a barrier region were realized. Significant reduction of electron work function for gold electrodes of prepared gaps is revealed.