Properties of Extremely Narrow Gaps Between Electrodes of a Molecular Transistor

Abstract

An electron transport through the extremely small gaps (1–5 nm wide) formed in narrow and thin gold nanowires by the electromigration method is studied in this work at various temperatures. A careful investigation of the final stage of a gap formation has shown a quantum character of a nanowire conductivity on this stage. Analysis of the electron transport characteristics through the resulting gaps was carried out. It shows that regimes of both a direct tunneling between electrodes and a “cold” emission into a barrier region were realized. Significant reduction of electron work function for gold electrodes of prepared gaps is revealed.