Nanowires Research Articles

Site-Selective Nanowire Synthesis and Fabrication of Printed Memristor Arrays with Ultralow Switching Voltages on Flexible Substrate.

Large area electronics (LAE) with the capability to sense and retain information are crucial for advances in applications such as wearables, digital healthcare, and robotics. The big data generated by these sensor-laden systems need to be scaled down or processed locally. In this regard, brain-inspired computing and in-memory computing have attracted considerable interest. However, suitable architectures have mainly been developed using costly and resource-intensive conventional lithography-based methods. There is a need for the development of innovative, resource-efficient fabrication routes that enable such devices and concepts. Herein, we present ZnO nanowire (NW)-based memristors on a polyimide substrate fabricated by a LAE-compatible and resource-efficient route comprising solution processing and printing technologies. High-resolution "drop-on-demand" and "direct ink write" printers are employed to deposit metallic layers (silver and gold) and a ZnO seed layer, needed for the site-selective growth of ZnO NWs via a low-cost hydrothermal method. The printed memristors show high bipolar resistance switching (ON/OFF ratio >103) between two nonvolatile states and consistent switching at ultralow voltages (all devices showed switching at amplitudes <200 mV), with the best performing device showing consistent cycled resistance switching over 4 orders of magnitude with SET and RESET voltages of about 71 and -57 mV, respectively. Thus, the presented devices offer reliable high resistance switching at the lowest reported voltage for printed memristors and prove to be competitive with many conventional nanofabrication-based devices. The presented results show the potential printed memristors technology holds for large-area, low-voltage sensing applications such as electronic skin.

Switching dynamics in Al/InAs nanowire-based gate-controlled superconducting switch

The observation of the gate-controlled supercurrent (GCS) effect in superconducting nanostructures increased the hopes for realizing a superconducting equivalent of semiconductor field-effect transistors. However, recent works attribute this effect to various leakage-based scenarios, giving rise to a debate on its origin. A proper understanding of the microscopic process underlying the GCS effect and the relevant time scales would be beneficial to evaluate the possible applications. In this work, we observed gate-induced two-level fluctuations between the superconducting state and normal state in Al/InAs nanowires (NWs). Noise correlation measurements show a strong correlation with leakage current fluctuations. The time-domain measurements show that these fluctuations have Poissonian statistics. Our detailed analysis of the leakage current measurements reveals that it is consistent with the stress-induced leakage current (SILC), in which inelastic tunneling with phonon generation is the predominant transport mechanism. Our findings shed light on the microscopic origin of the GCS effect and give deeper insight into the switching dynamics of the superconducting NW under the influence of the strong gate voltage.

Plasmon-enhanced two photon excited emission from edges of one-dimensional plasmonic hotspots with continuous-wave laser excitation.

One-dimensional junctions between parallelly and closely arranged multiple silver nanowires (NWs) exhibit a large electromagnetic (EM) enhancement factor (FR) owing to both localized and surface plasmon resonances. Such junctions are referred to as one-dimensional (1D) hotspots (HSs). This study found that two-photon excited emissions, such as hyper-Rayleigh, hyper-Raman, and two-photon fluorescence of dye molecules, are generated at the edge of 1D HSs of NW dimers with continuous-wave near-infrared (NIR) laser excitation and propagated through 1D HSs; however, they were not generated from the centers of 1D HSs. Numerical EM calculations showed that FR of the NIR region for the edges of 1D HSs was larger than that for the centers by ∼102 times, resulting in the observation of two-photon excited emissions only from the edge of 1D HSs. The analysis of the NW dimer gap distance dependence of FR revealed that the lowest surface plasmon (SP) mode, compressed and localized at the edges of 1D HSs, was the origin of the large FR in the NIR region. The propagation of two-photon-excited emissions was supported by the higher-order coupled SP mode.

Nanoscale Wet Etching of Molybdenum Interconnects with Organic Solutions.

Molybdenum (Mo) has emerged as a promising material for advanced semiconductor devices, especially in the design and fabrication of interconnects requiring sub-10nm metal nanostructures. However, current wet etching methods for Mo using aqueous solutions struggle to achieve smooth etching profiles at such scales. To address this problem, we explore wet chemical etching of patterned Mo nanowires (NWs) using an organic solution: ceric ammonium nitrate (CAN) dissolved in acetonitrile (ACN). In this study, we demonstrate two distinct etching pathways by controlling the reaction temperature: i) digital cyclic scheme at room temperature, with a self-limiting Mo recess per cycle of ≈1.6nm, and ii) direct etching at elevated temperature (60°C), with a time-controlled Mo recess of ≈2nm min-1. These methods not only offer a highly controllable nanoscale Mo etching but also ensure smooth and uniform etching profiles independent of the crystal grain orientation of the metal.

Dielectric Modulated Nanotube Tunnel Field-Effect Transistor with Core-Shell Cavity as a Label-Free Biosensor: Proposal and Analysis.

Dielectric Modulated Field-Effect Transistors (DMFETs) have emerged as promising candidates for label-free bioanalyte detection. However, the inherent short-channel effects in conventional DMFETs increase their static power dissipation significantly and limit their scalability and sensitivity. Therefore, FETs based on alternate conduction mechanism such as tunneling (TFETs), which are immune to the short-channel effects, appear to be a lucrative alternative to the MOSFETs for biosensing application. In this work, we propose a novel Dual Cavity Dielectric Modulated Nanotube Tunnel FET (DCDM NTTFET)-based label-free biosensor consisting of a Ge source and nanocavities within the core as well as a shell gate stack, which not only outperforms the conventional MOSFET and advanced nanowire (NW) TFET-based biosensors in terms of energy-efficiency and scalability but also exhibits a significantly high drain current sensitivity (SION = 2.9 × 108) and a threshold voltage sensitivity (SVth = 0.85), and a considerably high selectivity of more than 6 orders of magnitude. We also perform a comprehensive design space exploration for the proposed DCDM NTTFET and provide necessary design guidelines to further improve its performance considering the practical artifacts such as steric hindrance.

Single walled carbon nanotubes/ZnO nanowires heterostructure array for NO2 gas sensing at low ppm levels

A layer-by-layer ZnO nanowire (NW)-Single Walled Carbon Nanotube (CNT) hybrid gas sensor has been proposed for effective detection of NO2 gas under a low exposure limit of 5 ppm. The fabricated hybrid sensor displayed good sensor response (S %), good selectivity and fast response time towards the target gas. S % value of 36.4 % under 5 ppm NO2 level at 250 °C and good selectivity response towards different interfering gases like SO2, CO and H2 have been observed. Meanwhile, fast response time values of 44.08 s (response) and 62.11 s (recovery) were observed at 300 °C under 5 ppm NO2 level. The sensor baseline resistance of the hybrid heterostructure (HS) was also found to be lower when compared to that of a bare ZnO NW sensor. In addition, the presence of Single Walled CNT in the HS was also shown to reduce the operational temperature of the sensor. Temperature played a significant role by controlling the adsorption and desorption kinetics of gas molecules on the surface. Moreover, the formation of p-n interface between Single Walled CNT (p-type) and ZnO NW (n-type) might have modulated the potential charge barrier on interacting with the adsorbed gases which inturn might have impacted the response of the hybrid sensor. In addition, the large surface areas offered by both NWs and nanotubes might have improved the gas adsorption capability thereby enhancing the overall hybrid sensor’s response.

Room-temperature infrared photoluminescence and broadband photodetection characteristics of Ge/GeSi islands on silicon-on-insulator.

In this study, molecular beam epitaxial growth of strain-driven three-dimensional self-assembled Ge/GeSi islands on silicon-on-insulator (SOI) substrates, along with their optical and photodetection characteristics, have been demonstrated. The as-grown islands exhibit a bimodal size distribution, consisting of both Ge and GeSi alloy islands, and show significant photoluminescence (PL) emission at room temperature, specifically near optical communication wavelengths. Additionally, these samples were used to fabricate a Ge/GeSi islands/Si nanowire (NW) based phototransistor using a typical e-beam lithography process. The fabricated device exhibited broadband photoresponse characteristics, spanning a wide wavelength range (300-1600 nm) coupled with superior photodetection characteristics and relatively low dark current (~ tens of pA). The remarkable photoresponsivity of the fabricated device, with a peak value of ~11.4 A/W (λ ~ 900 nm) in the near-infrared (NIR) region and ~ 1.36 A/W (λ ~ 1500 nm) in the short-wave infrared (SWIR) region, is a direct result of the photoconductive gain exceeding unity. The room-temperature optical emission and outstanding photodetection performance, covering a wide spectral range from the visible to the SWIR region, showcased by the single layer of Ge/GeSi islands on SOI substrate, highlight their potential towards advanced applications in broadband infrared Si-photonics and imaging. These capabilities make them highly promising for cutting-edge applications compatible with complementary metal-oxide-semiconductor (CMOS) technology.

Optical and Structural Properties of Anisotropic ZnS Nanoparticle Suspensions.

We studied the optical and structural properties of highly ordered arrays of surfactant-capped ZnS nanowires (NWs) and nanorods (NRs) in organic suspensions. The photoluminescence (PL) emission measured under different concentrations and postsynthesis washing cycles interestingly showed increasing emission upon decreasing nanoparticle (NP) concentration. Synchrotron small angle X-ray scattering measurements elucidated the liquid-crystal-like structure of the NPs in suspension under different concentrations and temperatures. The NWs are stacked in a simple structure with a hexagonal cross-section, whereas the structure of the NRs is more complex, resembling a smectic-c liquid crystal, and shows unusual thermal expansion versus temperature. The results point out that a certain amount of bound surfactant must be present on the NP surface to maximize the PL intensity.

Nanowires for Solid‐State Lithium Batteries

AbstractA vital approach to accessing high‐safety and high‐energy‐density lithium batteries is to develop solid‐state electrolytes (SSEs) instead of liquid electrolytes. However, lithium‐ion transport and interface stability issues puzzle the construction of solid‐state lithium batteries (SSLBs). Thus, developing fast‐ionic conductors with high electrochemical performances and chemical stability is crucial to SSLBs. Nanowires (NWs) possess high aspect ratios for maintaining carrier transport along the radial direction, thus being extensively employed in SSLBs for the enhancement of ion transport efficiency, mechanical properties, thermostability, flame retardancy, and interface stability between electrodes and electrolytes, consequently boosting the cycle stability and safety of SSLBs. In this work, the advances in NWs for SSLBs, from rational design and synthesis strategies to applications in composite cathodes, anode materials, and SSEs of SSLBs, are systematically reviewed. The key role of NWs in electrodes and the enhancement mechanism of SSE performance by introducing NWs are concluded in detail. Finally, the existing challenges and anticipated prospects for the future development of advanced nanowire‐based SSLBs are summarized and demonstrated. This review aims to provide a comprehensive understanding to facilitate the application of NWs in SSLBs.

Flexible and Stretchable Photoelectrochemical Sensing toward True-to-Life Monitoring of Hydrogen Peroxide Regulation in Endothelial Mechanotransduction.

Hydrogen peroxide (H2O2) levels play a vital role in redox regulation and maintaining the physiological balance of living cells, especially in cell mechanotransduction. Despite the achievements on strain-induced cellular H2O2 monitoring, the applied voltage for H2O2 electrooxidation possibly gave rise to an abnormal expression and inadequate accuracy, which was still an inescapable concern. Hence, we decorated an interlaced CuO@TiO2 nanowires (NWs) semiconductor meshwork onto a polydimethylsiloxane film-supported gold nanotubes substrate (Au NTs/PDMS) to construct a flexible photoelectrochemical (PEC) sensing platform. Under white light irradiation, CuO@TiO2 NWs synergistically exhibited great stretchability and the PEC platform enabled stable photocurrent responses from the reduction of H2O2 even during mechanical deformation. Moreover, the admirable biocompatibility and an almost negligible open circuit voltage of +0.18 V for the CuO@TiO2 NWs/Au NTs/PDMS sensor guaranteed human umbilical vein endothelial cells (HUVECs) adhesion tightly thereon even under continuous illumination for 30 min. Finally, the as-proposed stretchable PEC sensor achieved sensitive and true-to-life monitoring of transient H2O2 release during HUVECs deformation, in which H2O2 release was positively correlated to mechanical strains. This investigation opens a new shade path on in situ cellular sensing and meanwhile greatly expands the application mode of the PEC approach.

Selective area epitaxy of in-plane HgTe nanostructures on CdTe(001) substrate

Semiconductor nanowires (NWs) are believed to play a crucial role for future applications in electronics, spintronics and quantum technologies. A potential candidate is HgTe but its sensitivity to nanofabrication processes restrain its development. A way to circumvent this obstacle is the selective area growth technique. Here, in-plane HgTe nanostructures are grown thanks to selective area molecular beam epitaxy on a semi-insulating CdTe substrate covered with a patterned SiO2mask. The shape of these nanostructures is defined by the in-plane orientation of the mask aperture along the <110>, <11¯0>, or <100> direction, the deposited thickness, and the growth temperature (GT). Several micron long in-plane NWs can be achieved as well as more complex nanostructures such as networks, diamond structures or rings. A good selectivity is achieved with very little parasitic growth on the mask even for a GT as low as 140 °C and growth rate up to 0.5 monolayer per second. For <110> oriented NWs, the center of the nanostructure exhibits a trapezoidal shape with {111}B facets and two grains on the sides, while <11¯0> oriented NWs show {111}A facets with adatoms accumulation on the sides of the top surface. Transmission electron microscopy observations reveal a continuous epitaxial relation between the CdTe substrate and the HgTe NW. Measurements of the resistance with four-point scanning tunneling microscopy indicates a good electrical homogeneity along the main NW axis and a thermally activated transport. This growth method paves the way toward the fabrication of complex HgTe-based nanostructures for electronic transport measurements.

MnO2/rGO bifunctional catalyst and support materials for gel polymer electrolyte based Zn-air batteries

A high-performance and long-lasting, rechargeable Zn-air battery requires a reliable and effective bifunctional catalyst material to facilitate the oxygen reduction and oxygen evolution reactions during the battery operation. Manganese oxide (MnO2) is a promising non-precious perspective due to its multivalency and various polymorphic structures that effectively catalyze oxygen evolution and reduction. In the present work, MnO2 nanowires (NWs) have been integrated with over-reduced graphene oxide (rGO) in various concentrations via a facile hydrothermal route. The synthesized materials, tested in lab-made zinc-air battery devices fabricated using gel polymer electrolyte, exhibit a significant enhancement in the performance and 2–3 times the cycle life compared to the bare MnO2. The ZAB device was tested for galvanostatic charge-discharge technique, and results exhibit a cycle life of 165 h (495 cycles@20 min per cycle) when discharged up to 1.0 V at a current density of 5.2 mA/cm2 and displayed a capacity of 731 mAh/gZn. Reduced graphene oxide acts as a support material that enhances the conductivity and surface area of the active material and also provides active sites for catalysis. This work signifies the importance of the engineering of the catalyst, support material, and additives, as slight changes may result in a significant enhancement in the cycle life.The appropriate composition of catalyst and support material and a compatible gel polymer electrolyte facilitates the fabrication of flexible zinc-air batteries for various applications.

Ultralong K0.5Mn0.75PS3 Nanowires Tailored by K-Ion Scissors for Extraordinary Sodium-Ion Storage.

1Dlayered nanowires (NWs) are expected to be excellent electrode materials due to their efficient electron/ion transport and strain/stress relaxation. However, it is a great challenge to synthesize layered NWs by a top-down synthetic route. Herein, ultralong 1D layered K0.5Mn0.75PS3 NWs (length: >100µm; diameter: ≈300nm) are synthesized for the first time using "K-ion chemical scissors", whose excellent sodium storage performance originates from the bifunctional structural unit, ingeniously combining the alloying energy storage functional unit (P-P dimer) with the quasi-intercalated functional unit ([MnS3]4- framework). Stress-driven K-ion scissors achieve the rapid transformation of MnPS3 bulk to K0.5Mn0.75PS3 NWs with directed tailoring. Compared to MnPS3, the NWs exhibit enlarged interlayer spacing (9.32 Å), enhanced electronic conductivity (8.17×10-5 S m-1 vs 4.47×10-10 S m-1), and high ionic conductivity (2.14 mS cm-1). As expected, the NWs demonstrate high capacity (709 mAh g-1 at 0.5 A g-1) and excellent cycling performance (≈100% capacity retention after 2500 cycles at 10 A g-1), ranking among metal thiophosphates. A quasi-topological intercalation mechanism of the NWs is revealed through further characterizations. This work expands the top-down synthesis approach and offers innovative insights for the cost-effective and large-scale fabrication of NWs with outstanding electrochemical performance.

PdMoPtCoNi High Entropy Nanoalloy with d Electron Self-Complementation-Induced Multisite Synergistic Effect for Efficient Nanozyme Catalysis.

Engineering multimetallic nanocatalysts with the entropy-mediated strategy to reduce reaction activation energy is regarded as an innovative and effective approach to facilitate efficient heterogeneous catalysis. Accordingly, conformational entropy-driven high-entropy alloys (HEAs) are emerging as a promising candidate to settle the catalytic efficiency limitations of nanozymes, attributed to their versatile active site compositions and synergistic effects. As proof of the high-entropy nanozymes (HEzymes) concept, elaborate PdMoPtCoNi HEA nanowires (NWs) with abundant active sites and tuned electronic structures, exhibiting peroxidase-mimicking activity comparable to that of natural horseradish peroxidase are reported. Density functional theory calculations demonstrate that the enhanced electron abundance of HEA NWs near the Fermi level (EF) is facilitated via the self-complementation effect among the diverse transition metal sites, thereby boosting the electron transfer efficiency at the catalytic interface through the cocktail effect. Subsequently, the HEzymes are integrated with a portable electronic device that utilizes Internet of Things-driven signal conversion and wireless transmission functions for point-of-care diagnosis to validate their applicability in digital biosensing of urinary biomarkers. The proposed HEzymes underscore significant potential in enhancing nanozymes catalysis through tunable electronic structures and synergistic effects, paving the way for reformative advancements in nano-bio analysis.

Nanophase-separated ternary PdAgCu nanotubes with rich interfaces for enhanced formic acid oxidation reaction

Herein, a facile strategy for the preparation of PdAgCu ternary nanotubes (NTs) is introduced by using Cu nanowires (NWs) as sacrificial templates along with an acid-leaching treatment. Since the phase separation between Ag and Cu, the obtained PdAgCu NTs is made up of various nanosphases including pure Ag, Cu, bimetallic PdCu and PdAg nanoalloys, instead of PdAgCu trimetallic nanoalloys. By adjusting the types of solvents during synthesis, the surface morphology of PdAgCu NTs can be tuned from smooth (S-PdAgCu NTs) to rough (R-PdAgCu NTs). Both S-PdAgCu NTs and R-PdAgCu NTs exhibit excellent electrocatalytic performances for formic acid oxidation reaction (FAOR). Remarkably, the mass activity of S-PdAgCu NTs for FAOR can reach up to 4307 mA mgPd-1 at peak potential, which is 8.5 times higher than that of commercial Pd (506 mA mgPd-1). The impressively enhanced activity should be ascribed to the synergistic effect of Pd with Cu or Ag and the multi-phase interface engineering, which is resulting from the tight position relationships among different monometallic or bimetallic alloy nanophases.

Controlled Vapor-Liquid-Solid Growth of Long and Remarkably Thin Pb1-xSnxTe Nanowires with Strain-Tunable Ferroelectric Phase Transition.

The Pb1-xSnxTe family of compounds possess a wide range of intriguing and useful physical properties, including topologically protected surface states, robust ferroelectricity, remarkable thermoelectric properties, and potential topological superconductivity. Compared to bulk crystals, one-dimensional (1D) nanowires (NWs) offer a unique platform to enhance the functional properties and enable new capabilities, e.g., to realize 1D Majorana zero modes for quantum computations. However, it has been challenging to achieve controlled synthesis of ultrathin Pb1-xSnxTe (0 ≤ x ≤ 1) nanowires in the truly 1D region. In this work, we report on a Au-catalyzed vapor-liquid-solid (VLS) growth of remarkably thin (20-30 nm) and sufficiently long (several to tens of micrometers) Pb1-xSnxTe nanowires of high single-crystalline quality in a controlled fashion. This controlled growth was achieved by enhancing the incorporation of Te into the Au catalyst particle to facilitate the precipitation of the Sn/Pb species and suppress the enlargement of the particle, which we identified as a major challenge for the growth of ultrathin nanowires. Our growth strategy can be easily extended to other compound and alloy nanowires, where the constituent elements have different incorporation rates into the catalyst particle. Furthermore, the growth of thin Pb1-xSnxTe nanowires enabled strain-dependent electrical transport measurements, which shows an enhancement of electrical resistance and ferroelectric transition temperature induced by uniaxial tensile strain along the nanowire axial direction, consistent with density functional theory calculations of the structural phase stability.

Selective-Area Growth of InGaAs Nanowires on SOI and the Vertical Transistor Application

The gate-all-around (GAA) structure avoids the problems inherent in miniaturizing field-effect transistors (FETs), such as off-state leakage current and short-channel effects. Among GAA structures, vertical GAA (VGAA) structures are expected as promising building blocks for future three-dimensional integrated circuit applications. The vertical III-V nanowires (NWs) on Si are expected as the fast channel materials for the VGAA structures on Si platforms. Thus, the combination of the VGAA structure with III-V NWs on Si significantly enhances on-state current while maintaining good gate controllability under low supply voltage. In addition, III-V NWs/Si tunnel junctions, which are formed by the direct integration of vertical III-V NWs on Si, can be utilized as VGAA tunnel FETs (TFETs) for low-power switch. Here we report on direct integration of vertical InGaAs NWs on silicon-on-insulator (SOI) substrates by selective-area growth and demonstrations of InGaAs NW-channel VGAA transistors (FETs and TFETs) on SOI.

Relationship between synthesis conditions and ORR activity of PtCo nanowire/C catalysts for PEFC cathodes

Nanowire (NW) structures have attracted attention as durable catalysts for the oxygen reduction reaction (ORR) due to their resistance to aggregation, unique morphology, and efficient electron conduction. However, NWs often suffer from limited structural stability, and there is a lack of research on their performance in membrane electrode assembly (MEA) studies. In this study, PtCo NW/C catalysts with various amounts of oleylamine (OAm) were prepared, and their oxygen reduction reaction (ORR) activity and durability were investigated by MEA and RDE testing conditions. XRD analysis and TEM observations showed that the prepared PtCo NWs were successfully alloyed,and PtCo NW alloys were observed. CV and LSV results showed that the PtCo NW/C OAm100 catalyst with 2 h of acid treatment had the best ORR activity. The I-V test results demonstrated that the PtCo NW/C OAm100 catalyst with 2 h of acid treatment had higher cell voltage, and cell performance was also excellent. It was found that the ORR activity of PtCo NW was improved by adding the appropriate amount of OAm.

Fabrication and in vitro biocompatibility of hierarchical cellulose acetate/polyvinylpyrrolidone@titania nanowire hollow microfibers

In this study, hierarchical cellulose acetate/polyvinylpyrrolidone hollow microfibers (CA/PVP HMFs) were first prepared via a dip coating method using a steel wire as tubular template and then supported a sol-gel deposition of titania nanoparticles (NPs) to derive CA/PVP@titania NP HMFs. After hydrothermally treated in NaOH solution, CA/PVP@titania NP HMFs were transformed to CA/PVP@titania nanowire (NW) HMFs. SEM observation showed that CA/PVP@titania NW HMFs had a hollow structure with diameters of 450–600 μm and exhibited a hierarchical and nanofibrous structure. Their surfaces were constructed by numerous titania NWs with diameters of 10–30 nm and lengths of 1–5 μm. The incorporation of PVP not only caused a significant change in surface wettability from hydrophobic CA HMFs to hydrophilic CA/PVP HMFs, but also promoted the sol-gel deposition of titania NPs on CA/PVP HMFs. CA/PVP@titania NW HMFs exhibited the highest hydrophilicity with water contact angle of 32° and the largest specific surface area of 86.1 m2/g. In vitro biocompatible evaluation indicated that CA/PVP@titania NW HMFs exhibited much higher cell adhesion and proliferation than CA/PVP@titania NP HMFs and CA/PVP HMFs within 7 days due to the presence of nanofibrous surface architecture. Thus, the present CA/PVP titania NW HMFs have potential as biocompatible cell supporting matrices.

Single ZnO Nanowire for Electrical and Optical NO2 Gas Sensing: Origin of Reversible and Irreversible Gas Effects Investigated by Photoluminescence Spectroscopy.

In this work, the gas sensing properties of a single ZnO nanowire (NW) are investigated, simultaneously in terms of photoluminescence (PL) and photocurrent (PC) response to NO2 gas, with the purpose of giving new insights on the gas sensing mechanism of a single 1D ZnO nanostructure. A single ZnO NW sensing device was fabricated, characterized, and compared with a sample made of bundles of ZnO NWs. UV near-band-edge PL emission spectroscopy was carried out at room temperature and by lowering the temperature down to 77 K, which allows detection of resolved PL peaks related to different excitonic transition regions. Surface effects were observed in PL maps, considering different nano and microstructures. Electrical and optical measurements were acquired at the same time during the NO2 gas exposure, allowing for the comparison of PL and PC response times and signal recovery. During NO2 gas desorption, irreversible behavior in the surface-related and donor-acceptor pair (DAP) regions is interpreted as the effect of an initial transient when electronic transfer from the gas molecules to the bulk occurs through the ZnO NW surface which acts as a channel. To the best of our knowledge, this is the first work which investigates the simultaneous PL optical and PC electrical response signals of a single ZnO NW to gas exposure.