Silicon carbide fiber reinforced silicon carbide ceramic matrix composite (CMC SiCf/SiC) has the advantages of high temperature resistance, corrosion resistance, high strength, low density, and oxidation resistance. It is a high-performance advanced material in aerospace, energy and other fields. However, due to its high hardness, brittleness and anisotropy of fiber structure, the research on application-oriented high-quality processing technology has become a hot issue. In this paper, a new process of rotational thirteen-beam coupling nanosecond laser processing of CMC-SiCf/SiC was studied. The rotational thirteen-beam coupling ablation experiments were carried out on CMC-SiCf/SiC workpiece. A laser beam is divided into thirteen beams and rotated around the beam center by using a beam splitter element. The morphology, structure and composition of ablation holes at different speeds were observed and analyzed by laser confocal microscope, scanning electron microscope, and X-ray energy dispersive spectrometer. It is found that the characteristics of rotational beam coupling have a significant effect on the laser ablation morphologies. The results show that the ablation region of CMC-SiCf/SiC is elliptical due to the fast heat transfer of fibers. The energy density distribution of the waist section of the Gaussian like beam after beam coupling is similar to the “W" shape, and the central energy is lower than the surrounding energy, and the ablation holes also show a similar “W" shape. With the increase of rotational speed, the hole depth first decreased and then increased, the hole diameter and roundness first increased and then decreased, and the hole section was “W" shaped. The ablation area can be divided into five parts: the white granular SiO2 solid coverage area, the recast layer, the lower recast layer, the molten layer, and the heat affected zone. The rotational characteristics will make the reaction intensity of the whole ablation area more uniform in the circumferential direction. The formation mechanism and element distribution of each part were explored. The research work in this paper will provide a new technical way for the high-performance application of CMC-SiCf/SiC.
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