Nanorod Light-emitting Diodes Research Articles

Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metalislands

We report the fabrication of InGaN/GaN nanorod light-emitting diodes (LEDs) usinginductively coupled plasma reactive-ion etching (ICP-RIE) and a photo-enhanced chemical(PEC) wet oxidation process via self-assembled Ni nanomasks. An enhancement by a factorof six times in photoluminescence (PL) intensities of nanorods made with the PEC processwas achieved in comparison to that of the as-grown structure. The peak wavelengthobserved from PL measurement showed a blue shift of 3.8 nm for the nanorods madewithout the PEC oxidation process and 8.6 nm for the nanorods made with the PECoxidation process from that of the as-grown LED sample. In addition, we havedemonstrated electrically pumped nanorod LEDs with the electroluminescence spectrumshowing more efficiency and a 10.5 nm blue-shifted peak with respect to the as-grown LEDsample.

Near ultraviolet light emitting diode composed of n-GaN∕ZnO coaxial nanorod heterostructures on a p-GaN layer

The authors report on the fabrication and characteristics of near ultraviolet nanorod light emitting diodes (LEDs) composed of n-GaN∕ZnO nanorod heterostructures on p-GaN substrates. The nanorod LEDs consist of the vertically aligned n-GaN∕ZnO coaxial nanorod arrays grown on a p-GaN substrate. The LEDs demonstrated strong near ultraviolet emission at room temperature. The nanorod LEDs were turned on a forward-bias voltage of 5V, and exhibited a large light emitting area. From electroluminescent spectra, dominant emission peaks were observed at 2.96 and 3.24eV for an applied current of 2mA. The origins of the strong and large area light emission are also discussed in terms of enhanced carrier injection from n-GaN nanostructures to p-GaN substrates.

Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching

We report a novel method to fabricate GaN-based nanorod light emitting diodes (LEDs) with controllable dimension and density using self-assemble nickel (Ni) and Ni/Si3N4 nano-masks and inductively coupled plasma reactive ion etching (ICP-RIE). Under the fixed Cl2/Ar flow rate of 50/20 sccm, ICP/Bias power of 400/100 W and chamber pressure of 0.67 Pa, the GaN-based nanorod LEDs were fabricated with density of 2.2 × 109 to 3 × 1010 cm−2 and dimension of 150–60 nm by self assemble Ni nano-masks with various size. The size of Ni/Si3N4 nano-mask was control by the thickness Ni film ranging 150–50 Å and rapid thermal annealing condition. The technique offers a controllable method of fabrication of GaN-based nanorod LEDs and should be applicable for fabrication of the others III–V nanoscale photonic and electronic devices.

Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching

We report a novel method to fabricate GaN-based nanorod light emitting diodes (LEDs) with controllable dimension and density using self-assemble nickel (Ni) and Ni/Si 3N 4 nano-masks and inductively coupled plasma reactive ion etching (ICP-RIE). Under the fixed Cl 2/Ar flow rate of 50/20 sccm, ICP/Bias power of 400/100 W and chamber pressure of 0.67 Pa, the GaN-based nanorod LEDs were fabricated with density of 2.2 × 10 9 to 3 × 10 10 cm −2 and dimension of 150–60 nm by self assemble Ni nano-masks with various size. The size of Ni/Si 3N 4 nano-mask was control by the thickness Ni film ranging 150–50 Å and rapid thermal annealing condition. The technique offers a controllable method of fabrication of GaN-based nanorod LEDs and should be applicable for fabrication of the others III–V nanoscale photonic and electronic devices.