We report the fabrication of InGaN/GaN nanorod light-emitting diodes (LEDs) usinginductively coupled plasma reactive-ion etching (ICP-RIE) and a photo-enhanced chemical(PEC) wet oxidation process via self-assembled Ni nanomasks. An enhancement by a factorof six times in photoluminescence (PL) intensities of nanorods made with the PEC processwas achieved in comparison to that of the as-grown structure. The peak wavelengthobserved from PL measurement showed a blue shift of 3.8 nm for the nanorods madewithout the PEC oxidation process and 8.6 nm for the nanorods made with the PECoxidation process from that of the as-grown LED sample. In addition, we havedemonstrated electrically pumped nanorod LEDs with the electroluminescence spectrumshowing more efficiency and a 10.5 nm blue-shifted peak with respect to the as-grown LEDsample.