Abstract
We report the fabrication of InGaN/GaN nanorod light-emitting diodes (LEDs) usinginductively coupled plasma reactive-ion etching (ICP-RIE) and a photo-enhanced chemical(PEC) wet oxidation process via self-assembled Ni nanomasks. An enhancement by a factorof six times in photoluminescence (PL) intensities of nanorods made with the PEC processwas achieved in comparison to that of the as-grown structure. The peak wavelengthobserved from PL measurement showed a blue shift of 3.8 nm for the nanorods madewithout the PEC oxidation process and 8.6 nm for the nanorods made with the PECoxidation process from that of the as-grown LED sample. In addition, we havedemonstrated electrically pumped nanorod LEDs with the electroluminescence spectrumshowing more efficiency and a 10.5 nm blue-shifted peak with respect to the as-grown LEDsample.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
