Nanoelectronic Systems Research Articles

A Briefly Survey in Electronics System Design

In this paper, it will be tried to briefely talk about electronic system design. In these 20 years, electronic system such as other sciences has improved. From analog and digital circuits toward nano bio systems. It will be discussed the main methods of electronic system design not only in analog and digital systems but also about nano and bio electronics systems.

Advanced Defect Detection in High-Speed Train Wheel Treads Using Nanoelectronic Systems

Detecting defects on the wheel tread of high-speed trains is crucial for ensuring train safety. However, the challenge lies in acquiring sufficient defect data for effective detection. To address this, we propose a novel multi-similarity based few-shot segmentation network (MSFSNet), which employs different architecture for training and detection. Taking advantage of the principle of feature tensor similarity, MSFSNet enables precise extraction tread defects. In the training phase, the network comprises three branches: query branch, support branch, and task discrimination branch. To enhance defect detection efficiency, the detection phase employs an alternative architecture, where the support branch is replaced with a database of extracted defect feature tensors. The support branch provides tread defect information to the query branch, which employs the Multi-Similarity (MS) module to integrate for defect segmentation and detection. This integration effectively mitigates the overfitting issue caused by a scarcity of tread defect images. To ensure the effectiveness of defect information from the support branch, a task discrimination branch is constructed to discriminate tasks on query images and select similar support images. The Query Segmentation Module (QSM) is devised to achieve precise detection across various tread defect scales, enabling accurate segmentation amidst background noise. Experimental testing of MSFSNet on public datasets and the collected Wheel Tread Defect Dataset (WTDD) shows promising results: on FSSD-12 dataset, MSFSNet improves few-shot segmentation mIoU by 8.9% (1-shot) and 7.0% (5-shot); its capability for few-shot defect detection was confirmed on industrial dataset industrial-5i; and achieves 99.63% accuracy in detecting wheel tread defects on WTDD.

Formation mechanism of two-dimensional hexagonal silica on SiO2/Si substrate

Owing to their remarkable electronic properties, silica ultrathin films have been utilized as an insulating layer in nanoelectronics systems. Silica films have been epitaxially grown on different substrates using various synthesis methods. Among all fabrication approaches, chemical vapor deposition has long been an advanced method for synthesizing two-dimensional (2D) materials due to its ability to ensure precise stacking control and minimize contamination between layers. This study harnessed the potential of CVD to atomically fabricate thin layered 2D silica on a SiO2/Si substrate. Significantly, a unique combination of multiple transition metals and salt as the catalysts aided the formation of 2D silica for the first time. Salt is a crucial catalyst in promoting the evaporation of high-melting-point metal catalysts, resulting in hexagonal nucleation sites on the SiO2/Si wafer. By meticulously controlling growth parameters, a distinctive hexagonal structure was obtained. Correspondingly, this work delves into the growth mechanism of 2D silica, as evidenced by experiments involving salt alone and individual transition metals. Group VB transition metals played a prominent role in achieving the hexagonal structure compared to their group IVB counterparts. This research offers insight into the formation and growth mechanism of 2D silica, expanding the understanding of silica nanostructures.

Quantum tunnelling in hafnia-based metal-insulator-metal diodes: atomistic-to-continuum modelling approach and experimental validation

In this work, we present a metal-insulator-metal (MIM) diode, based on quantum tunnelling phenomena. Its model is based on a multilevel modelling approach consisting of atomistic and continuum simulations, fully validated by extensive measurements. The MIM structure comprises a hafnium oxide (or hafnia, HfO2) dielectric layer, less than 4 nm thick and a square contact area of only 4 μm2, placed between two metallic electrodes, namely platinum as the source and titanium as the drain. The current–voltage (I–V) curve has been estimated by Density Functional Theory (DFT) calculations through an optimisation of the interfaces between metals and monoclinic HfO2. The dielectric parameters arising from ab initio computations have then been used as inputs for the successive circuit and electromagnetic simulations. Finally, the multilevel model has been validated with great accuracy, first measuring the I–V characteristics by applying a drain-source voltage between −1 V and +1 V, and then extracting the scattering parameters up to 40 GHz, thus demonstrating that DFT and circuit/electromagnetic simulations match almost perfectly the experimental ones. These outcomes represent the first study of such nanoscale devices investigated by means of a rigorous atomistic-to-continuum approach, providing invaluable information in order to improve fabrication and correctly assess the macroscale performance of nanoelectronics systems.

(Invited) Integration of Functional Nanostructures and Nanoparticles into Micro- and Nanoelectronic Components and Systems

In recent decades, there has been a significant evolution of microelectronic and semiconductor technologies towards the nanoscale. Both bottom-up and top-down integration concepts of functional nanostructures and nanoparticles into micro- and nanofabricated electronic components have become critical issues that decisively affect the performance of smart electronic systems in various application areas such as environmental sensing and energy harvesting.Functional nanostructures and nanoparticles of different shapes, sizes, morphologies, and materials are now used in various technical and industrial applications, medicine, pharmacy, biology, electronics, power engineering, ecology, and many other fields. However, the complex engineering challenge here is the integration of functional nanostructures, such as molecular components (e.g., functional self-assembled molecular monolayers or entities of desoxyribonucleic acid, DNA), organic or inorganic nanoparticles (metal, semiconductor, colloidal materials), or similar building blocks into nanolithographically fabricated environments.Manufacturing paradigms for this integration go beyond current CMOS- and MEMS-fabrication schemes. Scale-bridging and hybrid manufacturing schemes that combine established top-down manufacturing techniques for microelectronic devices, including aspects of nanotechnology, with bottom-up nanoassembly of molecules on unstructured and pre-structured substrates are required. Microsystems technology based on the combination of conventional semiconductor processing with biotechnological approaches has thus become an emerging field with manifold applications, especially in the field of sensor technology.This contribution describes two illustrative and innovative research questions in nanopatterning and system integration at the micro-nano-interface to motivate applications with new and unprecedented functionalities. The first research question focuses on network-based biocomputing (NBC) using biological agents driven by biomolecular motor proteins in a lithographically fabricated nanofluidic channel system. This approach opens up opportunities for energy-efficient solutions to complex mathematical problems as they make their way through the NBC network. Methods are required to create switchable and rewritable nano-networks to address different mathematical problems using a single NBC-chip. Therefore, stimuli-responsive materials must be selectively and locally deposited into the nano-network to control the transport of the filaments through the network.The second research question focuses on nanophotonic devices based on DNA origami. The high-precision arrangement of nanoscopic substructures using specific binding sites (capture ends) of the DNA origami enables the precise arrangement of DNA origami functionalized with individualized metal nanoparticles. This arrangement could be used to exploit individual spectral response mediated by plasmonic effects.From a technological perspective, top-down lithographic nanostructuring technologies and bottom-up nanostructuring technologies are the basis for new device concepts. The adaptability of nanostructures to the world of biological molecules and other nanoscopic building blocks such as quantum dots and nanoparticles enables novel, even personalized, devices and engineering solutions.

Ultra-thin vertical tft photosensor and photosynapse based on au-doped- graphene under transition metal selenide reaction

The development of artificial photosensitive synapses with high sensitivity and biomimetic properties that combine innovative concepts and neuromorphic architectures is crucial to achieving highly integrated and flexible intelligent visual systems. Recently, graphene heterostructure-based photosensitive synaptic transistors have been extensively studied for this purpose. However, compared to traditional transistors, vertical structure thin film transistors (VTFTs) with ultra-short channels and advantages, such as high integration, have yet to be investigated in photosensitive synapses. Here, we report an ultra-thin VTFT featuring a graphene/WxSex–1 van der Waals heterostructure that combines photonic and neuromorphic elements. We demonstrate a VTFT in which the channel layer is formed by covalently bonded WxSex–1 nanomaterials produced by introducing Se atoms on the surface of a tungsten metal thin film deposited via radio-frequency sputtering. This structure successfully simulated the main synaptic function, exhibited photosensitive synaptic responses to ultraviolet (λ = 365 nm) light, and demonstrated highly reliable electrical performance. Furthermore, the incorporation of gold nanoparticles changed the photosensitive synaptic response properties of the graphene/WxSex–1 heterostructure from excitatory to inhibitory, showing a responsivity of about ∼14 A W–1, which was attributed to the heterojunction interface resonant effects and efficient charge transfer induced by localized surface plasmons. This further enabled optical artificial synaptic applications while operating with low voltage spikes and low light intensity. This work provides a novel strategy for integrating and developing biological and nano-electronic systems.

Theoretical Examination of the Volume Concentration and Nanoparticles Density Influence on the Convective Heat Transfer Enhancement of Nanofluid in 2D Cavity Including the Square Heater

Nanofluid is one of the solutions of heat transfer, which can apply in devices fields as nuclear power, Nano-electronics systems, and solar fluid heating. In this work, the natural convection of Cuwater nanofluid is examined using the Lattice Boltzmann Method (LBM) as a mesoscopic approach. The main objectives of this work are to study the performance and pattern of Cu-water nanofluid and to demonstrate that the nanofluids behave differently while improving their energy transfer compared to pure fluids. The set goal was achieved by solving the tasks: based on the streamlines and isotherms profiles to demonstrate how the convection process and temperature gradients improve. Also, conducting study on heat transfer of nanofluid by calculate the Nusselt number. Depending on the nanoparticle volume percentage, the Grashof number Gr , and the hot obstacle have a significant impact on the convection flow and rate of heat transfer. The most important result is the enhancement of heat transfer with the increasing of volume fraction for a particular Grashof number, also it improves with the rising of Grashof number for a particular nanoparticles volume fraction. Therefore, the aspect ratios of the enclosure have played a significant part in Nusselt number variation. In addition, we found that the Nusselt number avg Nu is higher in the case of cavity without hot obstacle more than for cavity with hot obstacle, so the heat transfer improves in the case of cavity without hot obstacle. The significance of the obtained results consists that the nanofluid is one of the ways to improve heat transfer due to its specific characteristics and properties.

Radiating and electromagnetic nanofluids flow over an exponentially accelerated Riga plate with heat sink

In current history, there has been a significant interest in contemporary nanostructures for nanoelectronic systems. These systems progressively employ dynamic media to boost efficiency. Inspired by its applications in engineering, The effect of radiation and heat sink on electromagnetic nanofluids flow past an exponentially accelerated Riga surface is studied analytically using the Laplace transform technique. The base fluid is water, and three selected nanoparticles are used: Copper, Titanium dioxide, and Aluminium oxide. The porous medium is taken into account, as well as the validity of the Boussinesq approximation. The influence of modified Hartmann number, heat absorption, Grashof number, and thermal radiation parameter on nanofluid velocity and temperature profiles is depicted graphically and discussed. The shear stress and Nusselt number are determined, and outcomes are presented via plots and a table. The exact solution shows that the modified Hartmann number, nanofluid volume fraction and heat sink tend to improve as the values of Shear stress (skin friction) for Cu – water nanofluid shows a comparative increase over Al2O3 and TiO2 nanofluids. Whereas the Radiation effect tends to decrease as the shear stress values for Cu–water nanofluids show a higher decline over Al2O3 and TiO2 nanofluids.

Integrated Biochip–Electronic System with Single-Atom Nanozyme forinVivoAnalysis of Nitric Oxide

Nitric oxide (NO) exhibits a crucial role in various versatile and distinct physiological functions. Hence, its real-time sensing is highly important. Herein, we developed an integrated nanoelectronic system comprising a cobalt single-atom nanozyme (Co-SAE) chip array sensor and an electronic signal processing module (INDCo-SAE) for both in vitro and in vivo multichannel qualifying of NO in normal and tumor-bearing mice. The high atomic utilization and catalytic activity of Co-SAE endowed an ultrawide linear range for NO varying from 36 to 4.1 × 105 nM with a low detection limit of 12 nM. Combining in situ attenuated total reflectance surface enhanced infrared spectroscopy (ATR-SEIRAS) measurements and density function calculation revealed the activating mechanism of Co-SAE toward NO. The NO adsorption on an active Co atom forms *NO, followed by the reaction between *NO and OH-, which could help design relevant nanozymes. Further, we investigated the NO-producing behaviors of various organs of both normal and tumor-bearing mice using the proposed device. We also evaluated the NO yield produced by the wounded mouse using the designed device and found it to be approximately 15 times that of the normal mouse. This study bridges the technical gap between a biosensor and an integrated system for molecular analysis in vitro and in vivo. The as-fabricated integrated wireless nanoelectronic system with multiple test channels significantly improved the detection efficiency, which can be widely used in designing other portable sensing devices with multiplexed analysis capability.

(Invited, Digital Presentation) Emerging Materials and Devices for Energy-Efficient Computing

As the CMOS scaling driven by the Moore’s Law approaching the fundamental limits, high energy consumption and heat dissipation have been recognized as the most critical device challenges. Novel switching devices with significantly lower power based on unconventional mechanisms have been explored to replace CMOS in various research programs, e.g., Nanoelectronics Research Initiative (NRI). The major categories of these devices include steep-slope transistors, spintronic devices, ferroelectric devices, and van der Waals devices [1]. These devices are often implemented on emerging materials with unique properties. As the foundation of nanoelectronic devices and systems, novel materials (including dielectrics) present both great challenges and promising opportunities. For example, dielectric layers for gating and electrical insulation are critical for low-dimension devices; magnetic insulators are promising for low-power high-efficiency spintronic devices; ferroelectric materials have been utilized to realize “negative-capacitance” transistors with steep subthreshold slope. Despite abundant scientific breakthroughs achieved on these emerging devices, comprehensive benchmarking has revealed that most of them do not outperform CMOS for Boolean logic and von Neumann architectures [2]. Therefore, the focus of emerging materials and devices has increasingly shifted toward novel computing paradigms.Novel computing paradigms beyond Boolean logic and von Neumann architectures may provide solutions for energy-efficient computing. For example, in-memory computing reduces data movement between computing and memory units, and exploits the intrinsic parallelism in memory arrays. Neural-inspired computing implements cognitive and intelligent functions through a wide range of approaches, e.g., deep neural network, spiking neural network, hyperdimensional computing, probabilistic network, dynamic systems, etc. Although many of these approaches can be implemented in CMOS technologies, more efficient solutions may originate from the engineering and optimization of materials and devices that could enable native implementations of novel computing paradigms. For example, ferroelectric materials, binary and complex oxides, and chalcogenides have been utilized in a wide range of nonvolatile memories and analog devices, which may enable highly efficient in-memory computing and analog computing solutions. At the same time, stringent requirements exist for emerging devices to significantly outperform CMOS in novel computing paradigms, e.g., high density, fast speed, low power, high endurance, long retention, wide analog tunability, asymmetry, etc. [3] Specific requirements vary from application to application. Therefore, device-architecture co-design and co-optimization are important to address these requirements. A holistic approach from basic material exploration to device engineering and further up to architecture co-design has been adopted in more recent research programs, e.g., Energy-Efficient Computing from Devices to Architectures (E2CDA) [4].This presentation will review the opportunities and challenges of emerging materials and devices for energy-efficient nanoelectronics, and highlight the approaches and perspectives of the E2CDA program.

Double-bond-containing polyallene-based composite nanofibers

Composite nanofibers have attracted increasing attention due to their applications in a variety of fields, such as biomedicine, nanoelectronic and drug delivery systems. Particularly, the introduction of customizable reactive segments to composite nanofibers is proven efficient to generate novel nanomaterials with extra functionalities. However, the preparation of reactive composite nanofibers unavoidably involves multiple-step and tedious manipulations. In addition, these nanofibers are generally prepared at high dilution, which restricts their potential applications. Herein, a new method of producing reactive composite nanofibers was reported through the polymerization-induced self-assembly (PISA) formulation of poly(phenoxyallene) (PPOA)-containing diblock copolymers. Reversible addition-fragmentation chain transfer (RAFT) block copolymerization of styrene and POA was chosen as a model reaction to explore the polymerization and PISA conditions. It was found that a chain transfer agent (CTA) consisting of C12H25S as Z segment and –COOH in R moiety allows for the preparation of well-defined double-bond-containing poly(styrene)-b-poly(phenoxyallene) (PS-b-PPOA), poly(methyl acrylate)-b-poly(phenoxyallene) (PMA-b-PPOA) and poly(methyl methacrylate)-b-poly(phenoxyallene) (PMMA-b-PPOA) diblock copolymers with controlled molecular weights and narrow dispersities. Specifically, on the basis of as-prepared poly(ethylene glycol) (PEG) macro-CTA, we demonstrated the in situ formation of unique composite nanofibers of PEG-b-PPOA via PISA process in methanol. Our work provides a facile synthetic approach toward attractive one-dimensional composite nanofibers with controlled dimension and a capacity for post-functionalization.

Space-confined synthesis of SWNT bundles wrapped by MoS2 crystalline layers as flexible sensors and detectors

Single-walled carbon nanotubes (SWNTs) are ideal template for constructing one-dimensional (1D) heterojunctions with intriguing optical and electrical properties, yet it remains challenging to wrap foreign materials around SWNTs due to their very small diameter and large curvature. Here, we present a space-confined method to synthesize SWNT bundles wrapped by MoS2 crystalline layers (SWNT@MoS2) film by embedding a pristine SWNT film within a porous multi-walled nanotube sponge, which acts as a liquid precursor container for hydrothermal reaction. We find that crystalline MoS2 sheets could be formed around the outer surface of SWNT bundles uniformly and continuously, with tailored number of multi-layers (3–17 layers), for bundle sizes ranging from several to hundreds of nanometers. The resulting SWNT@MoS2 network shows much enhanced light response and gas sensitivity, presenting promising applications as flexible photo-detectors and toxic gas sensors. Our scalable synthesis method and SWNT-based coaxial-cables will be useful in future developing innovated 1D van der Waals heterojunctions and flexible nanoelectronic systems.

A three-dimensional analysis of heat transfer based on mesoscopic method in nanoscale Si-MOSFET and Gr-FET

Thermal diffusion in the metal oxide semiconductor field effect transistor has received increased attention across a number of disciplines in recent years. This paper studies a three-dimensional (3D) heat conduction process in a MOSFET device based on Silicon (Si) and Graphene (Gr) materials. In order to perform analyses, a mesoscopic method was applied, based on lattice Boltzmann method (LBM) with D3Q15 model accounting the specularity parameter effects. The present study found that the maximal temperature is spotted at the interface whose value is 308.7 ​K and 324.5 ​K for the Gr-FET and Si-MOSFET, respectively, at t ​= ​30 ps and p ​= ​0.5. Also, the obtained results indicate that the specularity parameter has an important role in the phonon heat transport and thus in reducing the temperature in the nanotransistors. The preference of graphene device and the unique properties of graphene material make this material a good candidate for future nanoelectronics systems generation.

A Flexible Microfluidic Chip-Based Universal Fully Integrated Nanoelectronic System with Point-of-Care Raw Sweat, Tears, or Saliva Glucose Monitoring for Potential Noninvasive Glucose Management.

By combining the distinctive noninvasive feature with the peculiar complete functional implementation trait, fully integrated raw noninvasive biofluid glucose biosensors offer active and remote glucose monitoring while posing minimal harm or infection risks compared to the traditional invasive manner. However, each previously reported fully integrated raw noninvasive biofluid glucose biosensor is solely focused on single-type raw noninvasive biofluid analysis. Given the diversity and complexity of subjects' physical conditions, single-type raw noninvasive biofluids are inappropriate to all crowds (e.g., sweat collection/analysis could be inapplicable for dermatopathic subjects). Here, we demonstrate the first example of a universal fully integrated nanoelectronic system with the unique capability to point-of-care and universally monitor diverse raw noninvasive biofluid (i.e., sweat, tears, and saliva) glucose by combining a flexible and disposable microfluidic enzymatic biosensor (named iezSlice) for raw biofluid pump-free sampling and measurement with a customized, handheld, and reusable wireless electronic device (named iezBar) for electrical signal transduction, conditioning, processing, and wireless transmission. We employed the specially designed high-concentration-buffer powder-loaded Kimwipes (HBP-KWs) as the microfluidic channel (microchannel) of iezSlice, guaranteeing a high-accuracy glucose analysis in various raw noninvasive biofluids. We also evaluated the potential utility of the universal fully integrated nanoelectronic system for noninvasive glucose management in healthy and diabetic subjects with the assistance of the proposed volatility-derived blood glucose concentration-free protocol. Although we focus on raw noninvasive biofluid glucose analysis in this work, the universal fully integrated nanoelectronic system may readily realize accurate monitoring of various biomolecules in raw noninvasive biofluids by introducing corresponding bioreceptors.

Material properties for absorption, lasing, micro capacitors and inductors using Maxwell’s equations

We were able to obtain useful expressions for absorption coefficient, lasing condition, and acceptable materials for integrated circuit capacitors and inductors. Ordinary Maxwell’s equations were combined with the electron equation of motion in the presence of external, internal electric, and internal magnetic fields, as well as friction, to achieve this. According to the findings, the absorption coefficient is related to the friction coefficient. In the presence of a static magnetic field, lasing occurs in a non-frictional fictional medium. The amplification factor is proportional to the magnetic field strength in the free-electron lasing situation. When the internal magnetic force balances the frictional force with no internal electric field for capacitors, the material can serve as a micro capacitor or a micro inductor. These conditions can be applied easily for human cells which act as nano electronic systems.

Thermionic electron emission in the 1D edge-to-edge limit

Thermionic emission is a tunneling phenomenon, which depicts that electrons on the surface of a conductor can be pulled out into the vacuum when they are subjected to high electrical tensions while being heated hot enough to overtake their work functions. This principle has led to the great success of the so-called vacuum tubes in the early 20th century. To date, major challenges still remain in the miniaturization of a vacuum channel transistor for on-chip integration in modern solid-state integrated circuits. Here, by introducing nano-sized vacuum gaps (∼ 200 nm) in a van der Waals heterostructure, we successfully fabricated a one-dimensional (1D) edge-to-edge thermionic emission vacuum tube using graphene as the filament. With the increasing collector voltage, the emitted current exhibits a typical rectifying behavior, with the maximum emission current reaching 200 pA and an ON–OFF ratio of 103. In addition, it is found that the maximum emission current is proportional to the number of the layers of graphene. Our results expand the research of nano-sized vacuum tubes to an unexplored physical limit of 1D edge-to-edge emission, and hold great promise for future nano-electronic systems based on it.

Performance enhancement of armchair graphene nanoribbon resonant tunneling diode using V-shaped potential well

We study the electron transport in armchair graphene nanoribbon (AGNR) resonant tunneling diode (RTD) using square and V-shaped potential well profiles. We use non-equilibrium Green’s function formalism to analyze the transmission and I–V characteristics. Results show that an enhancement in the peak current (I p ) can be obtained by reducing the well width (W w ) or barrier width (W b ). As W w decreases, I p shifts to a higher peak voltage (V p ), while there is almost no change in V p with decreasing W b . It is gratifying to note that there is an enhancement in I p by about 1.6 times for a V-shaped well over a square well. Furthermore, in the case of a V-shaped well, the negative differential resistance occurs in a shorter voltage range, which may beneficial for ultra-fast switching and high-frequency signal generation. Our work anticipates the suitability of graphene having better design flexibility, to develop ideally 2D RTDs for use in ultra-dense nano-electronic circuits and systems.

Tunable carbon nanotube diode with varying asymmetric geometry

We propose and demonstrate a carbon nanotube (CNT)-based field emission nanoscale diode to realize a fully integrated nanoscale system, namely, a true nanosystem. To the best of our knowledge, this is the first time a nanodiode simultaneously achieves ease of fabrication and individual tunability of multiple CNT diodes on the nanoscale on the same substrate in a one-time process. A nanodiode comprises a single-wall CNT cathode placed on a substrate, layered insulator, and metal anode. The proposed nanodiode allows us to adjust the turn-on voltage from 1 to 2.4 V by varying the surface area of the anode. Furthermore, as an example of a basic nano-electronic system, nanodiode-based fundamental logic gates (OR and NAND) are demonstrated on a CNT. We propose a theoretical model that derives the theoretical I–V characteristics based on the image-charge method to design the nanodiode quickly. The results in this study contribute to the development of carbon-based nanoelectronic systems.

FinFET based SRAMs in Sub-10nm domain

An exponential rise in transistor count, have increased the power consumption of the modern digital system. Moreover, at lower technology node, the performance of conventional CMOS designs degrades because of the short channel effects (SCEs). In sub-10 ​nm technologies, FinFET devices have good gate control and achieve superior performance than CMOS designs. FinFET devices possess high ION current and improved scalability compared to conventional CMOS. Among numerous double gate (DG) devices, the quasiplanar FinFET structure gained huge attention because of the simple fabrication process [4]. However, FinFET based designs have a major width quantization issue. The width of FinFET device varies only in quanta of silicon fin height (HFIN) [4]. This is a critical issue for ratioed designs like Static Random-Access Memory (SRAMs), where proper sizing of transistors is essential for correct functionality. With process variations, this issue becomes even worse and affect the performance of SRAM cell. The SRAM has a significant performance impact on current nanoelectronics systems. Next-generation devices overcome the short-channel effects (SCE) of CMOS technology and can be used to improve the efficiency of SRAM designs. FinFETs are promising emerging devices, which can improve the performance of SRAM designs at lower technology nodes. This review paper presents different types of SRAM bitcells and memory system architectures. It also discusses the detailed analysis of SRAM bitcells based on various highly explored FinFET devices in sub-10nm domain. The read stability and write ability of SRAM cells are determined using Static Noise Margin (butterfly) and N-curve methods. Moreover, this manuscript presents a benchmarking between the Underlapped FinFET based SRAM and Design Technology Optimized FinFET Based SRAM. In addition to this, Monte Carlo simulations are performed on the SRAM cells to evaluate process variations to determine the robustness of SRAM designs. Simulations were done in HSPICE using 7 ​nm technology.

Preparation and Tribological Properties of Graphene Oxide/Polydopamine-Derived Carbon Films on Silicon Substrate

In this study, dopamine and graphene oxide (GO) solutions were spin-coated on the silicon wafers to obtain the GO/polydopamine (PDA) films. The carbon films were subsequently fabricated by annealing the GO/PDA films in argon atmosphere. The atomic force microscopy analysis was performed to characterize the morphology and tribological properties of the composite films. The developed carbon films exhibited lower friction coefficient and high adhesion between composite films and substrate as compared to the untreated films, which was attributed to the enhanced hydrophobicity, improved hardness and elastic modulus and chemical bonding of the films with substrate. The findings obtained in this study would lead to an efficient design of the anti-wear nanofilms for the micro-/nanoelectronic mechanical systems.