We investigate the electronic properties of nanocrystalline cerium oxide $({\mathrm{CeO}}_{x})$ films, grown by various techniques, and we establish universal relations between them and the film structure, composition, and morphology. The nanocrystalline ${\mathrm{CeO}}_{x}$ films mainly consist of ${\mathrm{CeO}}_{2}$ grains, while a considerable concentration of trivalent ${\mathrm{Ce}}^{3+}$ is distributed at the ${\mathrm{CeO}}_{2}$ grain boundaries forming amorphous ${\mathrm{Ce}}_{2}{\mathrm{O}}_{3}.$ A small portion of ${\mathrm{Ce}}^{3+}$ is also located around O-vacancy sites. The optical properties of the ${\mathrm{CeO}}_{x}$ films are considered, taking into account the reported band-structure calculations. The fundamental gap ${E}_{g}$ of ${\mathrm{CeO}}_{x}$ is due to the indirect $\mathrm{O}2\stackrel{\ensuremath{\rightarrow}}{p}\mathrm{Ce}4f$ electronic transition along the L high-symmetry lines of the Brillouin zone and it is correlated with the $[{\mathrm{Ce}}^{3+}]$ content, explaining the redshift of ${E}_{g}$ in nanostructured ${\mathrm{CeO}}_{x},$ which is due to the ${\mathrm{Ce}}^{3+}$ at the grain boundaries and not due to the quantum-size effect itself. We also correlate the energy position of the $\mathrm{O}2\stackrel{\ensuremath{\rightarrow}}{p}\mathrm{Ce}4f$ electronic transition, which varies up to 160-meV wide, with the lattice constant of the ${\mathrm{CeO}}_{2}$ grains. We also show that the higher-order transitions are more sensitive to film composition. The refractive index, far below ${E}_{g},$ is explicitly correlated with the film density, independently of the ${\mathrm{Ce}}^{3+}/{\mathrm{Ce}}^{4+}$ and O concentrations, grain size, and lattice parameter. The density is also found to be the major factor affecting the absolute value of the ${\ensuremath{\varepsilon}}_{2}$ peak, which corresponds to the $\mathrm{O}2\stackrel{\ensuremath{\rightarrow}}{p}\mathrm{Ce}4f$ electronic transition.
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