Fluorite-type oxide such as Yttria-stabilized zirconia (YSZ) or doped-CeO2- δ ceramics are good electrolyte candidates for solid oxide fuel cells (SOFC) due to their high oxygen ion conductivity in high temperature range above 700 ºC[1]. Furthermore, porous and nanocrystalline CeO2- δ exhibit proton conduction at the surface below 100 °C[2]. This surface proton conduction is believed to the Grotthuss mechanism caused by the adsorption of water molecules. Since protons are produced by adsorbed water molecules and conduct through the layer of adsorbed water, oxygen vacancies and lattice constant are important parameters to enhance proton conduction. If high surface proton conduction can realize in CeO2- δ thin film, this may be more suitable than porous or nanocrystalline materials for new electrochemical devices and smart fuel cells.Recently, our group reported that the higher ion conductivity depends on the lattice constant and grain size for YSZ and Sm-doped CeO2- δ thin films[3,4]. However, the effect of crystallinity on the ion conductivity is not clarified. In this study, we have prepared the CeO2- δ thin films on YSZ (002) substrates by RF magnetron sputtering and probed their surface proton conduction below 300 °C in terms of electrical conductivity and electronic structure.The CeO2- δ ceramics target was prepared by solid-state reaction method. The CeO2- δ thin films with thicknesses of ~20 and ~120 nm were prepared by RF magnetron sputtering by adjust the deposition time. The sputtering conditions is followed; The base pressure was kept at 5.0×10-8 Torr and the deposition pressure was kept at 3.5 mTorr to control the Ar flow rate of ~2.67 sccm. The RF power was fixed at 30 W. The crystal and electrical structure of CeO2- δ thin films were evaluated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (PES) and X-ray absorption spectroscopy (XAS). The electrical characteristics was evaluated by A.C. impedance method.The prepared CeO2- δ thin films on the YSZ substrates were due to the exhibited 200 and 400 peaks. Figure shows the Arrhenius plot of the conductivity of the as-deposited and wet-annealed CeO2- δ thin films, indicating thermally activated behavior in the medium temperature range but different behavior below 100 °C. The conducting carrier in the medium and room temperature range is considered to be oxide ion and proton, respectively. In this poster, we will show that the surface proton conduction of CeO2- δ thin film is closely related to the lattice distortion and oxygen vacancies concentration at the surface.
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