Nanocrystal Devices Research Articles

Power efficiency estimation of silicon nanocrystals based light emitting devices in alternating current regime

The power efficiency of silicon nanocrystal light-emitting devices is studied in alternating current (ac) regime. An experimental method based on impedance spectroscopy is proposed. The power efficiency in ac regime is higher than the one measured in direct current before a threshold frequency and decreases significantly for higher frequencies. This decrease is attributed to an increase in electrical power injected at high frequencies and it is directly related to the disordered microscopic structure of the active material. The proposed method can be applied for any kind of device for which it is possible to measure the impedance characteristic.

Band-like transport, high electron mobility and high photoconductivity in all-inorganic nanocrystal arrays

Flexible, thin-film electronic and optoelectronic devices typically involve a trade-off between performance and fabrication cost. For example, solution-based deposition allows semiconductors to be patterned onto large-area substrates to make solar cells and displays, but the electron mobility in solution-deposited semiconductor layers is much lower than in semiconductors grown at high temperatures from the gas phase. Here, we report band-like electron transport in arrays of colloidal cadmium selenide nanocrystals capped with the molecular metal chalcogenide complex In(2)Se(4)(2-), and measure electron mobilities as high as 16 cm(2) V(-1) s(-1), which is about an order of magnitude higher than in the best solution-processed organic and nanocrystal devices so far. We also use CdSe/CdS core-shell nanoparticles with In(2)Se(4)(2-) ligands to build photodetectors with normalized detectivity D* > 1 × 10(13) Jones (I Jones = 1 cm Hz(1/2) W(-1)), which is a record for II-VI nanocrystals. Our approach does not require high processing temperatures, and can be extended to different nanocrystals and inorganic surface ligands.

Ambipolar and Unipolar PbSe Nanowire Field-Effect Transistors

Wet-chemical methods, under rigorous air-free conditions, were used to synthesize single-crystalline 10 nm diameter PbSe nanowires (NWs), and electric-field, directed assembly was employed to align NW arrays to form the semiconducting channels of field-effect transistors (FETs). Electrical measurements revealed as-aligned NWs in bottom, gold, contact FETs are predominantly p-type ambipolar, consistent with the presentation of small barriers to electron and hole injection for this low band gap semiconductor. Exposing the NW FET to UV-ozone p-doped the NWs, illustrating the sensitivity of PbSe to oxygen, but controlled oxidation allowed the fabrication of unipolar p-type FETs. Selectively exposing the contact region of as-aligned NW FETs to low to moderate concentrations of hydrazine, commonly used to n-dope nanocrystal and NW devices, switched the predominantly p- to n-type ambipolar behavior as if the entire NW channel was exposed. At these hydrazine concentrations, charge transfer doping the metal-semiconductor interface dominates the FET characteristics. Only upon exposing the NW FETs to high hydrazine concentrations did charge transfer doping of the NW channel overcome the large intrinsic, thermally generated carrier concentration of this low band gap material, modulating the NW carrier concentration and forming unipolar n-type FETs. Pulling low vacuum removed surface hydrazine returning the predominantly p-type ambipolar FET behavior. Doping and dedoping with hydrazine were repeatedly reversible. By applying surface modification to n- and p-dope PbSe NW FETs, we fabricated the first PbSe NW inverters, demonstrating the promise of these nanostructured materials in integrated circuits.

Effects of nanocrystal size and device aging on performance of hybrid poly(3-hexylthiophene):CdSe nanocrystal solar cells

We have studied hybrid solar cells based on the polymer poly(3-hexylthiophene) (P3HT) and colloidal CdSe nanocrystals. Using CdSe nanospheres with varying size, we have found that the power conversion efficiency ( η P ) of these devices increases monotonically with the CdSe nanocrystal size, from η P =(0.39±0.04)% under AM1.5G solar illumination for 4.0±0.2 nm size nanospheres to η P =(1.9±0.2)% for 6.8±0.5 nm size nanospheres. The efficiency increase with nanocrystal size is mostly due to a significant increase in the short-circuit current, whereas the open-circuit voltage and fill factor of the solar cells are less affected. The devices also exhibit abnormal initial aging behavior when exposed to air, as an increase in both the short-circuit current and open-circuit voltage during the first 30 min leads to a significant increase in η P .

Surface modification of CdSe quantum dots for biosensing applications: Role of ligands

For an optimum performance of colloidal nanocrystal devices for a variety of applications such as photonic devices, solar cells and biological labelling, the determining factors are the nanocrystal surface and size. In this work, these two factors have been tuned via wet chemistry to tailor the material properties: The absorption and emission spectra have been tailored by choice of the nanocrystal size; nanocrystal shape by surface modification and photoluminescence (PL) efficiency determined by surface traps, has been tuned via appropriate selection of the nanocrystal capping ligands. Here, we have shown that through ligand-exchange process, the surface of the CdSe quantum dots (QDs) can be modified by replacing the longer-chain ligands of conventional trioctyl phosphine oxide (TOPO) or oleic acid (OA) with shorter-chain ligand of butyl amine. This imparts colloidal stability and water solubility to CdSe QDs for its potential applications in biosensors and biological imaging. It is conjectured that crystallite sizes, oxidation potential of CdSe QDs and stereochemical compatibility of ligands (TOPO, oleic acid and butyl amine) greatly influences the photophysics and photochemistry of CdSe QDs.

Performance and Reliability Study of Single-Layer and Dual-Layer Platinum Nanocrystal Flash Memory Devices Under NAND Operation

Memory window (MW) and the retention of single-layer (SL) and dual-layer (DL) platinum (Pt) nanocrystal (NC) devices are extensively studied before and after program/erase (P/E) cycling. DL devices show better charge storage capability and reliability over the SL devices. Up to 50% improvement in the stored charge is estimated in the DL device over SL when P/E is performed at equal field. Excellent high temperature and postcycling retention capabilities of SL and DL devices are shown. The impact of the interlayer film (ILF) thickness on the retention of the DL structure is reported. While SL devices show poor P/E cycling endurance, DL cycling is shown to meet the minimum requirements of the multilevel cell (MLC) operation.

Germanium and Silicon Nanocrystal Thin-Film Field-Effect Transistors from Solution

Germanium and silicon have lagged behind more popular II-VI and IV-VI semiconductor materials in the emerging field of semiconductor nanocrystal thin film devices. We report germanium and silicon nanocrystal field-effect transistors fabricated by synthesizing nanocrystals in a plasma, transferring them into solution, and casting thin films. Germanium devices show n-type, ambipolar, or p-type behavior depending on annealing temperature with electron and hole mobilities as large as 0.02 and 0.006 cm(2) V(-1) s(-1), respectively. Silicon devices exhibit n-type behavior without any postdeposition treatment, but are plagued by poor film morphology.

Performance and Reliability of Au and Pt Single-Layer Metal Nanocrystal Flash Memory Under nand (FN/FN) Operation

In this paper, we report on the fabrication and reliability characterization of gold (Au) and platinum (Pt) single-layer nanocrystal (NC)-based Flash memory devices for NAND application. The devices are fabricated using a CMOS-compatible process flow with high-quality (low leakage and large breakdown) Al2O3 as the control dielectric. The impact of processing conditions on the NC size, area coverage, and number density is also investigated. Large memory window ( ~ 7.5 V for Au and ~ 10 V for Pt) and good retention are observed for both Au and Pt NC devices. Excellent postcycling retention is also noted for Pt NC devices. Endurance characteristics are found to be of concern as maximum of only 1 times 103 and 4 times 103 cycles can be obtained for Au and Pt devices, respectively. Anneal-temperature-dependent gate leakage is observed in Au devices and is investigated using analytical methods. Diffusion of Au atoms from the NC into the gate dielectrics is seen which correlates to the electrical measurements. Postcycling retention and program/erase of Pt NC devices are shown to be good.

Enhancement of NiSi-Based Nanocrystal Formation by Incorporating Ge Elements for Nonvolatile Memory Devices

In this work, a NiSiGe mixed film was deposited by the cosputtering approach. The rapidly thermal treatment condition was executed at for 30 s in nitrogen ambient to form the nanocrystal structure. From the results of the transmission electron microscopy, the annealed NiSiGe film reveals a larger nanocrystal size and density distribution than pure NiSi. X-ray photoelectron spectroscopy analyses were used to confirm that the Ge elements provide the additional nucleation centers and enhance the nanocrystal formation during the thermal process. Raman spectroscopy and an energy-dispersive spectrometer also exhibit the compositions of nanocrystals including Ni, Si, and Ge elements. With the better formation process, a remarkable improvement of memory effect is observed by comparing with the NiSi and NiSiGe nanocrystal memory devices. Also, the NiSiGe nanocrystal device shows a better retention characteristic due to the lower quantum confinement effect.

Photovoltaic Devices Employing Ternary PbSxSe1-x Nanocrystals

We report solar cells based on highly confined nanocrystals of the ternary compound PbS(x)Se(1-x). Crystalline, monodisperse alloyed nanocrystals are obtained using a one-pot, hot injection reaction. Rutherford back scattering and energy-filtered transmission electron microscopy suggest that the S and Se anions are uniformly distributed in the alloy nanoparticles. Photovoltaic devices made using ternary nanoparticles are more efficient than either pure PbS or pure PbSe based nanocrystal devices.

Hybrid P3HT/CdSe Photovoltaic Cells: Effects of Nanocrystal Size and Device Aging

AbstractHybrid solar cells based on conjugated polymers and colloidally synthesized inorganic nanoparticles have been recognized as an alternative to all-organic solar cells due to the intrinsically higher charge transport property in inorganic component. In this work, CdSe nanoparticles with different sizes, served as the electron acceptor, have been used together with poly(3-hexylthiophene) (P3HT) as the active layer for the hybrid solar cells. The power-conversion efficiency (ηp) of these devices strongly depends on the size of the CdSe nanoparticles, increasing from ηp ˜0.5% for 4.0 nm size nanoparticles to ηp ˜2.4% for 6.8 nm size nanoparticles under AM 1.5 G solar illumination. Furthermore, the devices also exhibit an unusual initial aging period when exposed to the air, which results in a significant enhancement in the short-circuit current, open-circuit voltage and power conversion efficiency.

Sensitive Solution-Processed Bi2S3 Nanocrystalline Photodetectors

Solution-processed nanocrystal optoelectronic devices offer large-area coverage, low cost, and compatibility with a wide range of substrates. Recently, photodetectors and photovoltaics based on spin-coated nanoparticle films have shown tremendous progress in performance. However, high-performance devices reported to date have employed either Pb or Cd, raising concerns regarding environmental impact and regulatory acceptance. Herein we report a high-performance solution-processed photodetector based instead on Bi2S3 nanocrystals. The devices exhibit photoconductive gain on the order of 10 combined with temporal response on the 10 ms time scale. The resultant solution-processed Bi2S3 nanorod photoconductive photodetectors are of interest in visible and near-infrared (NIR) wavelength applications requiring video-frame-rate temporal response.

Enhancement of Charge-Storage Performance in Ni-Silicide Nanocrystal Devices by Thermal Annealing a Ni–Si–N Thin Film

The stored charge characteristics of Ni-silicide nanocrystals embedded in nitride formed by annealing a Ni–Si–N thin film were studied in this paper. We used X–ray photoelectron spectroscopy, leakage current density, and X-ray diffraction to offer chemical material analysis of nanocrystals with surrounding dielectric and the crystallization of nanocrystals for different thermal annealing treatments. Transmission electron microscope analyses revealed nanocrystals embedded in the nitride layer. Nonvolatile Ni–Si nanocrystal memories with annealing revealed superior electrical characteristics for charge-storage capacity and reliability compared with the memories with 300 and annealing. In addition, we used energy-band diagrams to explain the significance of surrounding dielectric for reliability.

Using different work function nanocrystal materials to improve the retention characteristics of nonvolatile memory devices

Recently, nanocrystal nonvolatile memory (NVM) devices have attracted great research interest. Taking into account the effect of work function to account for the better retention characteristics for nanocrystals with larger work function, utilizing different work functions Au, W and Si as floating gates is proposed and comparatively studied in this paper. It was found that Au nanocrystals have better retention characteristic than W and Si. The good retention characteristic of the Au nanocrystal device is due to the larger work function and it is difficult for electrons captured by Au nanocrystal to escape from them. So, the retention characteristic of the device can be improved by using larger work function nanocrystal materials.

Highly efficient (infra)red conversion of InGaN light emitting diodes by nanocrystals,enhanced by colour selective mirrors

Colloidal nanocrystal layers deposited onto the enclosure of InGaN light emitting diodesare demonstrated to operate as nano-phosphors for colour conversion with high colourstability. Depending on the choice of the nanocrystal material (either CdSe/ZnS or PbSnanocrystals are applied), the diode emission at 470 nm is converted to red or toinfrared light, with similar quantum efficiencies. The colour conversion is furtherimproved by dielectric mirrors with high reflectivity at the emission band of thenanocrystals, resulting in an almost doubling of the nanocrystal light extractionfrom the devices, which increases the nanocrystal device efficiency up to 19.1%.

Electromagnetic modeling of active silicon nanocrystal waveguides

In this paper we propose an electromagnetic analysis of active silicon nano-crystal (Si-nc) waveguide devices. To account for the nonlinearity in the active medium we introduce a four level rate equation model whose parameters are based on experimentally reported material properties. The electromagnetic polarization serves to couple the quantum mechanical and electromagnetic behavior within the ADE-FDTD scheme. The developed modeling tool is used to simulate waveguide amplifiers, enhanced spontaneous emission microcavities, and the temporal lasing dynamics of active Si-nc based devices.

Highly efficient near-infrared hybrid organic-inorganic nanocrystal electroluminescence device

We report the use of PbS nanocrystals within a hybrid device that emits 1.2μm electroluminescence with an external quantum efficiency of 1.15% corresponding to an internal quantum efficiency of ∼5%–12% thus demonstrating a viable, low-cost, highly efficient near infrared organic electroluminescent device. Direct generation of the excited state on the nanocrystal result in eliminating competing processes that have previously led to the low reported efficiencies in near-infrared light emitting devices. Furthermore, the emission wavelength can be tuned to cover a wide range of wavelengths including the 1.3–1.5μm region without significant change of the efficiency.

A Unified Description of Current–Voltage Characteristics in Organic and Hybrid Photovoltaics under Low Light Intensity

We develop a simple model that can explain the current-voltage ( J- V) curves of excitonic photovoltaic solar cells, spanning polymer:polymer, polymer:fullerene, and polymer:nanocrystal devices. We show that by subtracting out the dark current, we can explain apparent intensity-dependent characteristics and thus identify geminate recombination as the dominant loss mechanism and establish its electric field dependence. We present an analytic fit to the J- V curves of all measured devices based on a single fitted parameter, the electric field required to split 50% of geminate charge pairs, which we term the critical field. Devices of different material combinations and morphologies can all be described by this method and yield critical fields varying between >1 x 10(8) V/m for blends of poly(9,9'-dioctylfluorene- co-bis- N, N'-(4-butylphenyl)-bis- N, N'-phenyl-1,4-phenylenediamine) (PFB) and poly(9,9'-dioctylfluorene- co-benzothiadiazole) (F8BT) and 8 x 10 (5) V/m for slow-grown blends of poly(3-hexylthiophene-2,5-diyl) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). A comparison with material properties reveals that the primary route to improved photovoltaic materials is enhanced charge delocalization.

Enhanced photovoltaic performance in nanoimprinted pentacene-PbS nanocrystal hybrid device

Pentacene and PbS nanocrystal bilayer photovoltaic devices are fabricated after the pentacene layer is subjected to nanoimprinting using a laser textured silicon stamp. Increased short circuit current densities are observed for the imprinted devices, which are attributed to increased charge mobility in the pentacene film caused by the decrease in the intermolecular distances during nanoimprinting. This work is consistent with previous reports where hydrostatic pressure induced mobility increases have been observed in polyacenes under gigapascal pressure regimes. It is believed that the pentacene film undergoes localized high pressures during nanoimprinting, giving rise to the increased hole mobilities.

Novel coexisted sol-gel derived poly-Si-oxide-nitride-oxide-silicon type memory

The authors use a very simple sol-gel spin coating method at 900°C and 1min rapid thermal annealing to fabricate three different poly-Si-oxide-nitride-oxide-silicon-type flash memories. The memory windows estimated from the curve of drain current versus applied gate voltage are 3, 3.3, and 4V for (i) HfO2 thin film, (ii) hafnium silicate nanocrystal, and (iii) coexisted hafnium silicate and zirconium silicate nanocrystal memory, respectively. Together with the measurement from gate disturbance and drain disturbance on these fabricated devices, the coexisted nanocrystal devices exhibit better reliability than both the thin film type memory and single nanocrystal type memory.