Solid-state magneto-ionic (MI) effects have shown promise for energy-efficient nanoelectronics, where ionic migration may be used to achieve atomic-scale control of interfaces in magnetic nanostructures. To date, magneto-ionics have been mostly explored in oxygen-based systems [1-4], while there is a surge of interest in alternative ionic systems due to their different ionic migration mechanisms and characteristics [5-7].We have recently demonstrated effective MI control of magnetic functionalities using a variety of ionic species, particularly nitrogen. In nitride-based Ta/CoFe/MnN/Ta films, the chemically induced MI effect is combined with the electric field driving of nitrogen to electrically manipulate exchange bias [8]. Upon field-cooling the heterostructure, ionic diffusion of nitrogen from MnN into the Ta layers occurs. A significant exchange bias is observed, which can be further enhanced by ~ 20% after voltage conditioning (Figs. 1a-1e). This enhancement can be reversed by voltage conditioning with an opposite polarity. Nitrogen migration within the MnN layer and into the Ta capping layer causes the enhancement in exchange bias, which is observed in polarized neutron reflectometry studies.We have also achieved all-nitride-based magneto-ionic systems [9]. Thin films of (001)-ordered Mn4N are grown by sputtering Mn onto Mn3N2 seed layer on Si (100) substrate. Nitrogen ion migration across the Mn3N2 /Mn layers leads to a continuous evolution of the layers to Mn3N2 /Mn4N, Mn2N/Mn4N, and eventually Mn4N alone (Figs. 1f-1g). Furthermore, we have demonstrated MI control of the exchange bias effect in an all-nitride Mn4N/MnNx system, where the field-trained exchange field can be varied up to ten times by introducing or extracting nitrogen from the nitride system. This is achieved by adjusting the nitrogen gas partial pressure during deposition or varying annealing temperature after deposition.These effects demonstrate contrasts with oxygen-based MI effects in terms of operating principles, switching speed, and reversibility. Such MI systems are valuable platforms to gain quantitative understanding at buried interfaces. They also offer potentials for device applications based on electric modulation of magnetic functionalities.This work has been supported in part by the NSF (ECCS-2151809, DMR-2005108, DMR-1828420), SRC/NIST SMART Center, and KAUST.[1] U. Bauer et al., Nat. Mater. 14, 174 (2015).[2] C. Bi et al., Phys. Rev. Lett. 113, 267202 (2014).[3] D. A. Gilbert et al., Nat. Commun. 7, 11050 (2016).[4] G. Chen et al., Sci. Adv. 6, eaba4924 (2020).[5] A. J. Tan et al., Nat. Mater. 18, 35 (2019).[6] G. Chen et al., Phys. Rev. X 11, 021015 (2021).[7] J. de Rojas et al., Nat. Commun. 11, 5871 (2020).[8] C. J. Jensen et al., ACS Nano 17, 6745 (2023).[9] Z. J. Chen et al., Appl. Phys. Lett. 123, 082403 (2023). Figure 1
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