Abstract
Applying a bias along electronic transport direction, we theoretically investigate the control of a temporal electron-spin splitter (TESS), which can be realized experimentally by patterning a horizontally-magnetized ferromagnetic stripe on the surface of InAs/AlxIn1-xAs heterostructure. Due to the spin-field interaction, dwell time for electron in this TESS device is still spin related, even if a bias is applied. Thus, electron spins are separable in time dimension, giving rise to an obvious electron-spin polarization effect. Besides, both magnitude and sign of spin polarization ratio can be tuned by changing bias, leading to an electrically-controllable TESS as a tunable electron-spin polarized source for semiconductor spintronic device applications.
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