Abstract
With the help of atomic-layer doping technology, we theoretically explore how to use a δ-potential to manipulate a temporal electron-spin splitter (TESS), which is based on a spin-orbit-coupling (SOC) modulated magnetic nanostructure. Due to the SOC, the dwell time still depends on electron spins even if a δ-doping is embedded inside the TESS. Moreover, both the magnitude and sign of spin polarization ratio can be controlled by tuning the weight or position of the δ-doping. Therefore, a structurally manipulable TESS device can be obtained for semiconductor spintronic device applications.
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