A patterned nanodiamond film is grown using microwave plasma-enhanced chemical vapor deposition. A selective growth method compatible with traditional silicon processing is described. A diamond pattern of high quality and moderate resolution is achieved. The process utilized is simple to generate patterns without etching diamond. A rectifying junction is demonstrated using a p-type nanodiamond and p-type silicon heterojunction with rectifying ratio of two orders of magnitude. This simple patterning technique could be applied in the fabrication of diamond electronic and mechanical devices and biological sensors. The plasma emission spectra indicate the presence of both CH and C2 species, which are responsible for diamond growth.