High-density HfB2-SiC ceramics were prepared by reactive melt infiltration (RMI) at a relatively low temperature (1500°C). The ceramics had the open porosity of 0.5 % and the uniform distribution of constituent phases. The long-term oxidation behavior of HfB2-SiC ceramics in air was investigated at 1650°C. After oxidation for 100 h, the weight gain rates of ceramics varied within the range of 1.30–2.26 %. The oxidation products included SiO2, HfO2, and HfSiO4 phases, among which the HfSiO4 compound possessed the higher stability resulting from the reaction between the HfO2 and SiO2 phases. The samples all exhibited the typical feature of layered scale structure after HfB2-SiC oxidation, which was composed of the outermost SiO2 glass layer with the uneven thickness, followed by a relatively porous oxide layer containing white HfO2 and slight HfSiO4, below it was the unoxidized HfB2-SiC. The presence of this multiphase glass layer endowed the samples with excellent oxidation resistance.
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