Dielectric Multilayer Research Articles

Coupling light into a guided Bloch surface wave using an inversely designed nanophotonic cavity

Controlling the propagation of light in the form of surface modes on miniaturized platforms is crucial for multiple applications. For dielectric multilayers that sustain Bloch surface waves at their interface to an isotropic dielectric medium, a conventional approach to manipulate them exploits shallow surface topographies fabricated on top of the truncated stack. However, such structures typically exhibit low index contrasts, making it challenging to confine, steer, and guide the Bloch surface waves. Here, we theoretically and experimentally demonstrate a device for a Bloch surface wave platform that resonantly couples light from a cavity to a straight waveguide. The structure is designed using topology optimization in a 2D geometry under the effective index approximation. In particular, the cavity–waveguide coupling efficiency of the radiation emitted by an individual source in the cavity center is optimized. The cavity is experimentally found to exhibit a narrow resonant peak that can be tuned by scaling the structure. The waveguide is shown to guide only light that resonates in the cavity. Fully three-dimensional simulations of the entire device validate the experimental observations.

Vectorial spatial differentiation of optical beams with metal–dielectric multilayers enabled by spin Hall effect of light and resonant reflection zero

We theoretically describe and numerically investigate the operation of “vectorial” optical differentiation of a three-dimensional light beam, which consists in simultaneous computation of two partial derivatives of the incident beam profile with respect to two spatial coordinates in different transverse electric field components. It is implemented upon reflection of the beam from a layered structure by simultaneously utilizing the effect of optical resonance and the spin Hall effect of light. As an example of a layered structure performing this operation, we propose a three-layer metal–dielectric–metal (MDM) structure. We show that by choosing the parameters of the MDM structure, it is possible to achieve the so-called isotropic vectorial differentiation, for which the intensity of the reflected optical beam (squared electric field magnitude) is proportional to the squared absolute value of the gradient of the incident linearly polarized beam. The presented numerical simulation results demonstrate high-quality vectorial differentiation and confirm the developed theoretical description.

Mutual Impedance of Antennas Placed on a Multilayer Dielectric

Mutual Impedance of Antennas Placed on a Multilayer Dielectric

Influence of ionization and cumulative effects on laser-induced crystallization in multilayer dielectrics

Influence of ionization and cumulative effects on laser-induced crystallization in multilayer dielectrics

A Highly Efficient, Selective, and Thermally Stable Dielectric Multilayer Emitter for Solar Thermophotovoltaics

Herein, the design, optimization, fabrication, and characterization of a highly efficient selective emitter (SE) for solar thermophotovoltaic systems is presented. An SE consisting of three layers (SiNx–SiO2–TiO2) deposited on a tungsten substrate is optimized for use with photovoltaic (PV) cells based on III–V semiconductors, such as GaSb, InGaAs, and InGaAsSb. The fabricated SE shows an emitter efficiency (ηSE) of 50% when coupled with a PV cell having an energy bandgap of 0.63 eV. After thermal treatment carried out at 1000 °C for 8 h in a vacuum environment, ηSE of 46% is recorded, demonstrating the thermal stability of the proposed SE. Its behavior at high temperatures has also been studied using simulations based on the transfer matrix method and on refractive indices experimentally measured at different temperatures (up to 1000 °C). The results show ηSE of 44% in the energy bandgap range of 0.55–0.63 eV, proving that the proposed structure is promising and can operate at high temperatures. In addition, the behavior of a real PV cell is simulated, and calculations show a maximum PV cell efficiency of 15% at 1000 °C and 25% at 1600 °C, exceeding the Shockley–Queisser limit.

Achieving low-voltage operating high-mobility organic thin-film transistors by a multi-layered gate dielectric

Organic thin-film transistors (OTFTs) have attracted great attention for their inherent advantages and promising applications in emerging fields. Simultaneously realizing low-voltage operation and high-mobility in one OTFT is one of prerequisites for the commercialization, which is a huge challenge so far. An important route to address this challenge is to develop an ideal gate dielectric with a high capacitance and a low interfacial trap density at the dielectric/channel. In this Letter, we demonstrate the low-voltage operating high-mobility OTFTs by elaborately designing and processing a multi-layered gate dielectric. The gate dielectric consists of a high permittivity polymer film, a polymer buffing layer with a high surface energy, and an ultrathin long-chain alkane buffer layer. The effects of both the structures and the processes of gate dielectrics on the performances of OTFTs are investigated in detail. In addition, the relevant physical mechanisms are discussed. Finally, the optimal OTFTs exhibit high mobilities with the average and maximum values up to 5.62 and 6.74 cm2/V s, respectively, at low operating voltages below −5 V. Our findings reveal that designing and processing a reasonable multi-layered gate dielectric is a promising strategy to achieve both high-mobility and low-voltage operation in OTFTs, thereby fostering their development.

High-Q Tamm plasmon-like resonance in spherical Bragg microcavity resonators.

This work proposes what we believe to be a novel Tamm plasmon-like resonance supporting structure consisting of an Au/SiO2 core-shell metal nanosphere structure surrounded by a TiO2/SiO2 spherical Bragg resonator (SBR). The cavity formed between the core metal particle and the SBR supports a localized mode similar to Tamm plasmons in planar dielectric multilayers. Theoretical simulations reveal a sharp absorption peak in the SBR bandgap region, associated with this mode, together with strong local field enhancement. We studied the modification of a dipolar electric emitter's radiative and non-radiative decay rates in this resonant structure, resulting in a quantum efficiency of ∼90% for a dipole at a distance of r=60n m from the Au nanosphere surface. A 30-layer metal-SBR Tamm plasmon-like resonant supporting structure results in a Q up to ∼103. The Tamm plasmon-like mode is affected by the Bragg wavelength and the number of layers of the SBR, and the thickness of the spacer cavity layer. These results will open a new avenue for generating high-Q Tamm plasmon-like modes for switches, optical logic computing devices, and nonlinear applications.

Dielectric multilayers impact on radiation-induced charge accumulation in highly sensitive oxide field effect transistors

Radiation dosimetry is crucial in many fields where the exposure to ionizing radiation must be precisely controlled to avoid health and environmental safety issues. Among solid state detectors, we recently demonstrated that Radiation sensitive OXide Field Effect Transistors (ROXFETs) are excellent candidates for personal dosimetry thanks to their fast response and high sensitivity to x rays. These transistors use indium–gallium–zinc oxide as a semiconductor, combined with a dielectric based on high-permittivity and high-atomic number materials. Here, we present a study on the ROXFET gate dielectric fabricated by atomic layer deposition, where we compare single- and multi-layer structures to determine the best-performing configuration. All the devices show stable operational parameters and high reproducibility among different detectors. We identified an optimized bi-layer dielectric structure made of tantalum oxide and aluminum oxide, which demonstrated a sensitivity of (63 ± 2) V/Gy, an order of magnitude larger than previously reported values. To explain our findings, we propose a model identifying the relevant charge accumulation and recombination processes leading to the large observed transistor threshold voltage shift under ionizing radiation, i.e., of the parameter that directly defines the sensitivity of the device.

Adjoint-based optimization of dielectric coatings for refractory metals to achieve broadband spectral reflection

Refractory metals, which include niobium, tantalum, molybdenum, and tungsten, are critical components in applications in extreme environments due to their attractive thermomechanical properties. However, their low reflectivity below 1500 nm has prompted researchers to focus on increasing their reflection at shorter wavelengths. In this study, we applied an adjoint-based optimization technique to improve the spectral reflectivity of refractory metals in the broadband spectrum (300–3000 nm). An optimized periodic multilayer consisting of SiO2/TiO2 is selected as a starting point for the process. Then, the adjoint-based method is implemented to enhance the reflection of the surfaces. This approach involves an iterative procedure that guarantees improvement in every iteration. In every iteration, both the direct and adjoint solutions of Maxwell’s equations are computed to predict the scattering characteristics of a particular microstructure on a surface and measure its effectiveness. The results of our study indicate that the final designs not only increase reflectivity to over 90% but also have thermomechanical benefits that make them suitable for use in harsh environments. We also explored the effect of initial geometry on the results. Overall, our study shows that the adjoint-based optimization technique is an effective method for creating high-performing broadband reflectors with refractory metal substrates coated with dielectric multilayers.

Modified BBFTO ceramic oxide with high dielectric constant and low loss-tangent for possible electronic applications

In this report, a complex barium titanate ceramic oxide of the form BaBi1.6Fe0.4TiO6 was prepared by the solid-state casting process. More Bi3+ percentage was selected to boost the dielectric and ferroelectric effects, while lowering the Fe3+ content could minimize the leakage current and consequently, the dielectric loss (tanδ). The X-ray diffraction (XRD) data suggests an establishment of monoclinic distortion (P21/c) of smaller mean crystallite size (∼40 nm) using the Debye-Scherrer formula. The compound exhibits dielectric values, such as ɛr ∼ 771, and relatively low loss, tanδ ∼ 0.017 at the ambient experimental conditions. Thus, the material can be incorporated into different electronic devices where higher dielectric constant and lower losses are essential, for example, multi-layered ceramic capacitors, transmission lines, and gate dielectrics. The AC-conductivity essence of the compound follows Jonscher’s power law as well as Arrhenius relation. The PE hysteresis loop was traced at different conditions with a function of the incident electric field in the ambient atmospheric conditions. The outcome of this study revealed that the material has remanent polarization hence suggesting a ferroelectric effect with less hysteresis loss; therefore, it could be useful in memory storage devices.

Impact of the multilayer dielectric design on the laser-induced damage threshold of pulse compression gratings for petawatt-class lasers.

The peak-power of petawatt-class lasers is limited by laser-induced damage to final optical components, especially on the pulse compression gratings. Multilayer dielectric (MLD) gratings are widely used in compressor systems because they exhibit a high diffraction efficiency and high damage threshold. It is now well established that the etching profile plays a key role in the electric field distribution, which influences the laser damage resistance of MLD gratings. However, less attention has been devoted to the influence of the multilayer design on the laser damage resistance of MLD gratings. In this Letter, we numerically and experimentally evidence the impact of the dielectric stack design on the electric field intensity (EFI) and the laser-induced damage threshold (LIDT). Three different MLD gratings are designed and manufactured to perform laser damage tests. On the basis of the expected EFIs and diffraction efficiencies, the measured LIDTs show how the multilayer design influences the laser resistance of the MLD gratings. This result highlights the impact of the multilayer dielectric design on the electric field distribution and shows how to further improve the laser-induced damage threshold of pulse compression gratings.

Effects of stacking sequence and top electrode configuration on switching behaviors in ZnO-HfO2 hybrid resistive memories

The resistive switching (RS) behavior of multilayered ReRAM devices is typically influenced by two aspects: the intrinsic properties of the dielectric multilayer, and other extrinsic contributions. In this study, we deposited and investigated bi-layered memories incorporating ZnO and HfO2 dielectrics. Different stacking sequences of the two oxides (ZnO/HfO2 and HfO2/ZnO) were employed to explore the intrinsic contribution of the bilayer microstructure, while different top electrode configurations (Pt and Ti) were utilized to demonstrate the extrinsic impact. All devices exhibit characteristic bipolar RS behavior, showcasing their functionality. But interestingly, the device with a Pt top electrode displays digital RS behavior, while the one with a Ti top electrode exhibits analog RS behavior. The completely different switching types observed during the reset process of the ZnO-HfO2 hybrid resistive memories are attributed to different interface charge migration process and structural characteristic. And as compared to the tailoring effect of stacking sequences (bilayer microstructure and oxide/oxide interface), the tailoring effect of top electrode configuration (electrode materials and oxide/electrode interface) is much stronger. Based on the latter, the switching ratio can be remarkably improved by at least two orders of magnitude, the reset voltage (energy consumption) can also be significantly reduced, and other discussed switching parameters can also show greater improvement. The comprehensive comparative analysis of intrinsic and extrinsic contributions provides valuable insights for exploring the RS mechanism and optimizing the design of bi-layered memory devices.

Ultra-Sharp Angular Filtering of Far-Field Signals With Graded-Index Multilayers

Dielectric multilayers with graded index treat the propagating waves impinging at different angles very differently, due to the occurred total internal reflection. Such an ultra-sharp change in the response can be exploited for filtering, manipulation and tailoring of spatially distributed electromagnetic signals. Various utilities of the proposed filter such as power splitting, spatial DC isolation, beam shifting and low-profile energy interaction are demonstrated. The regarded setup can be vital as component in the operation of integrated photonic devices dealing with optical signal processing and analog information control.

Electromagnetic Field Screening on a Limited Antenna Arranger Located on a Multilayer Dielectric

Electromagnetic Field Screening on a Limited Antenna Arranger Located on a Multilayer Dielectric

The Decomposition of Dilute 1-Butene in Tubular Multilayer Dielectric Barrier Discharge Reactor: Performance, By-Products and Reaction Mechanism

Butene is a typical component of exhaust gas in the petrochemical industry, the emission of which into the atmosphere would lead to air pollution. In this study, a tubular multilayer dielectric barrier discharge (TM-DBD) reactor was developed to decompose 1-butene at ambient pressure. The experimental results show that a decomposition efficiency of more than 99% and COx selectivity of at least 43% could be obtained at a specific energy density of 100 J/L with an inlet concentration of 1-butene ranging from 100 to 400 ppm. Increasing the volume ratio of O2/N2 from 0 to 20% and the specific energy density from 33 to 132 J/L were beneficial for 1-butene destruction and mineralization. Based on organic byproduct analysis, it was inferred that the nitrogenous organic compounds were the main products in N2 atmosphere, while alcohol, aldehyde, ketone, acid and oxirane were detected in the presence of O2. In addition, the contents of formaldehyde, acetaldehyde, ethyl alcohol, acetic acid and propionic acid increased with an increase in specific energy density, but the contents of propionaldehyde, ethyl oxirane, butyraldehyde and formic acid decreased. Three main pathways of 1-butene destruction were proposed involving Criegee intermediates and ozonolysis of the olefins, and the following degradation could be the dominant pathways rather than epoxidation. Overall, the developed TM-DBD system paved the way for scaling up the applications of plasma technology for gaseous pollutant decomposition.

Development of High‐Reflectivity and Antireflection Dielectric Multilayer Mirrors for AlGaN‐Based Ultraviolet‐B Laser Diodes and their Device Applications

Fabrication techniques for high‐reflectivity (HR) and antireflection (AR) dielectric multilayer mirrors for AlGaN‐based ultraviolet‐B (UV‐B) laser diodes are developed. After depositing several dielectric materials and evaluating their complex refractive indices via ellipsometry, it is determined that SiO2 as a low‐refractive‐index material and Ta2O5 as a high‐refractive‐index material are appropriate material combinations in the UV‐B region at a light wavelength of ≈300 nm due to their low extinction coefficients and large refractive index difference. Based on these results, HR mirror with a reflectance of >99% in the UV‐B region at a center wavelength of 310 nm and an AR mirror with a reflectance of ≈8% in the same wavelength range are demonstrated; a mirror with reflectance that is almost equal to the designed value is demonstrated. Furthermore, these mirrors are coated on the respective edge surfaces of the UV‐B laser diodes. A comparison of the characteristics of the same device before and after edge coating reveals a reduction in the threshold current density of laser oscillation, whereas, simultaneously, an increase in slope efficiency and external differential quantum efficiency is observed. The improvement of these device characteristics, estimated from the above reflectance values, is confirmed to be almost theoretically explainable.

Accurate Estimation without Calibration of the Complex Relative Permittivity of Multilayer Dielectric Material based on the Finite Integration Technique

In this paper, a simple and effective solution is proposed to accurately estimate the complex relative permittivity of individual layers and multilayers of dielectric material samples from the S-parameters measured by two waveguide cells having equal or different lengths filled with the same vacuum/empty material without having to calibrate before performing experiments. The measurement system is set up by modeling using the Computer Simulation Technology (CST) software. In the modeling, a single layer/multilayer material sample is placed in the X-band rectangular waveguide and it has two ports used for the electromagnetic wave supply and measurement of S-parameters. From the S-parameters measured, the complex relative permittivity of individual layers and the multilayers of the material samples are estimated by the proposed method. The known single-layer and multilayer materials such as Garlock, Bakelite, and Teflon have different dielectric constants and thicknesses. The results show that the complex relative permittivity of the samples matches the measured and calculated values of S-parameters in the frequency range of 8.2GHz to 12.4GHz.

Hybrid Fabrication of Prestrain-Locked Acrylic Dielectric Elastomer Thin Films and Multilayer Stacks.

Dielectric elastomers based on commercial acrylic dielectric elastomers (VHB adhesive films) are widely investigated for soft actuators due to their large electrically driven actuation strain and high work density. However, the VHB films require prestretching to overcome electromechanical instability, which adds fabrication complexity. In addition, their high viscoelasticity leads to a low response speed. Interpenetrated polymer networks (IPNs) are developed to lock the prestrain in VHB films, resulting in free-standing films that are capable of large-strain actuation. In this work, a prestrain-locked high-performance dielectric elastomer thin film (VHB-IPN-P) by introducing 1,6-hexanediol diacrylate to create an IPN in the VHB network and a plasticizer to enhance the actuation speed is reported. VHB-IPN-P based actuators exhibit stable actuation at 60% strain up to 10Hz and reach a peak energy density of 102 Jkg⁻1 . In addition, a hybrid process is also developed for the fabrication of multilayer stacks of VHB-IPN-P with strong inter-layer bonding and structural integrity. Four-layer stacks fabricated preserve the strain and energy density of single-layer VHB-IPN-P films but with linearly scaled force and work output.

Challenges in the development of a reliable cw-LIDT measurement routine

The characterization of continuous-wave (cw) laser-induced damage threshold (LIDT) requires a suitable measurement routine to obtain reliable results. In this study, we show that the existing measurement protocols are of limited use for cw-LIDT measurements. On the basis of testing several mirrors with varied distance and number of spots on the samples an adapted protocol for the damage behavior under cw laser irradiation is proposed. We observed a significant effect governed by debris and induced stress of induced damages on the damage behavior of subsequent irradiation spots. Finally, we performed a parametric study on the optical properties of mirror designs consisting of a metal and a dielectric multilayer film and demonstrated the LIDT dependence on the thermal conductivity of the substrate and the absorption of the components.

Band alignment of TiO2/SiC and TiO2/Si heterojunction interface grown by atomic layer deposition

Silicon carbide (SiC) is regarded as a promising semiconductor owing to its wide band gap and high thermal conductivity. Meanwhile, it possesses issues such as interface properties, which may affect the performance of SiC substrate power devices (e.g. MOSFET), especially when compared with similarly structured silicon appliances. Given that the development of SiC semiconductor devices has a number of commonalities with conventional silicon-based semiconductors, titanium dioxide (TiO2), a material that has a great track record in Si-based semiconductor devices, has been chosen for investigation in this work. Although TiO2 is not capable of being a gate dielectric alone on the SiC substrate because of its relatively narrow band gap, it can be adopted into composite or multilayer gate dielectrics to reach satisfying characteristics. As such, the interfacial state and heterostructure between TiO2 and SiC remain worthy being researched. In the present study, the properties of atomic layer deposited (ALD) TiO2 films on silicon substrates were compared with those on 4H-SiC substrates via x-ray photoelectron spectroscopy, atomic force microscopy, and x-ray reflectometry. It is shown that the interface state between ALD TiO2 film and both types of substrates as-deposited have similar chemical conditions, whereby TiO2 layer barely react with substrates, containing great amount of oxygen vacancies. According to band alignment calculations, heterostructure of both samples are type-II heterojunctions with negatively shifted conduction band. Although the large bandwidth of 4H-SiC hinders the use of TiO2 as a gate dielectric in power devices, this structure has the potential for other semiconductor products.