Modified BBFTO ceramic oxide with high dielectric constant and low loss-tangent for possible electronic applications

Abstract

In this report, a complex barium titanate ceramic oxide of the form BaBi1.6Fe0.4TiO6 was prepared by the solid-state casting process. More Bi3+ percentage was selected to boost the dielectric and ferroelectric effects, while lowering the Fe3+ content could minimize the leakage current and consequently, the dielectric loss (tanδ). The X-ray diffraction (XRD) data suggests an establishment of monoclinic distortion (P21/c) of smaller mean crystallite size (∼40 nm) using the Debye-Scherrer formula. The compound exhibits dielectric values, such as ɛr ∼ 771, and relatively low loss, tanδ ∼ 0.017 at the ambient experimental conditions. Thus, the material can be incorporated into different electronic devices where higher dielectric constant and lower losses are essential, for example, multi-layered ceramic capacitors, transmission lines, and gate dielectrics. The AC-conductivity essence of the compound follows Jonscher’s power law as well as Arrhenius relation. The PE hysteresis loop was traced at different conditions with a function of the incident electric field in the ambient atmospheric conditions. The outcome of this study revealed that the material has remanent polarization hence suggesting a ferroelectric effect with less hysteresis loss; therefore, it could be useful in memory storage devices.