Monolayer Transition Metal Dichalcogenides Research Articles

Ultrafast Formation of Charge Transfer Trions at Molecular‐Functionalized 2D MoS2 Interfaces

In this work, we investigate trion dynamics occurring at the heterojunction between organometallic molecules and a monolayer transition metal dichalcogenide (TMD) with transient electronic sum frequency generation (tr‐ESFG) spectroscopy. By pumping at 2.4 eV with laser pulses, we have observed an ultrafast hole transfer, succeeded by the emergence of charge‐transfer trions. This observation is facilitated by the cancellation of ground state bleach and stimulated emission signals due to their opposite phases, making tr‐ESFG especially sensitive to the trion formation dynamics. The presence of charge‐transfer trion at molecular functionalized TMD monolayers suggests the potential for engineering the local electronic structures and dynamics of specific locations on TMDs and offers the potential for transferring unique electronic attributes of TMD to the molecular layers.

Ultrafast Formation of Charge Transfer Trions at Molecular-Functionalized 2D MoS2 Interfaces.

In this work, we investigate trion dynamics occurring at the heterojunction between organometallic molecules and a monolayer transition metal dichalcogenide (TMD) with transient electronic sum frequency generation (tr-ESFG) spectroscopy. By pumping at 2.4 eV with laser pulses, we have observed an ultrafast hole transfer, succeeded by the emergence of charge-transfer trions. This observation is facilitated by the cancellation of ground state bleach and stimulated emission signals due to their opposite phases, making tr-ESFG especially sensitive to the trion formation dynamics. The presence of charge-transfer trion at molecular functionalized TMD monolayers suggests the potential for engineering the local electronic structures and dynamics of specific locations on TMDs and offers the potential for transferring unique electronic attributes of TMD to the molecular layers.

Impact of Carrier Gas Flow Rate on the Synthesis of Monolayer WSe2 via Hydrogen-Assisted Chemical Vapor Deposition

Transition metal dichalcogenides (TMDs), particularly monolayer TMDs with direct bandgap properties, are key to advancing optoelectronic device technology. WSe2 stands out due to its adjustable carrier transport, making it a prime candidate for optoelectronic applications. This study explores monolayer WSe2 synthesis via H2-assisted CVD, focusing on how carrier gas flow rate affects WSe2 quality. A comprehensive characterization of monolayer WSe2 was conducted using OM (optical microscope), Raman spectroscopy, PL spectroscopy, AFM, SEM, XPS, HRTEM, and XRD. It was found that H2 incorporation and flow rate critically influence WSe2’s growth and structural integrity, with low flow rates favoring precursor concentration for product formation and high rates causing disintegration of existing structures. This research accentuates the significance of fine-tuning the carrier gas flow rate for optimizing monolayer WSe2 synthesis, offering insights for fabricating monolayer TMDs like WS2, MoSe2, and MoS2, and facilitating their broader integration into optoelectronic devices.

Valley filtering using magnetic proximity effect in monolayer WS[formula omitted]

A quantum system implanted with monolayer transition metal dichalcogenide (TMDC) is proposed as a valley filter based on a ballistic point contact with zigzag edges. A quantum point contact (QPC) structure is formed in the middle of scattering region and the geometrical size of the QPC is varied by electrostatic gate potentials. The energy band structures and electronic transport properties are investigated using a two-bands k⋅p Hamiltonian by using parameters from the density functional theory (DFT) calculations. The magnetic proximity effect from an Eu-terminated ferromagnetic substrate (EuS) generates a giant valley splitting in the energy of the monolayer WS2 nanoribbon. The conductance is limited by reducing the width and by increasing the length of the QPC because conductance is strongly related to the number of transmission channels and the amounts of back scatterings at the QPC. The polarity of valley current can be manipulated by applying a local gate potential in the QPC region, where the manipulated polarity is limited to well defined K′ polarization only. The lateral hetero materials on both sides of the QPC or lateral hetero ferromagnetic substrate is necessary to have desired valley and spin polarities of current by manipulating the local gate potential. The experimental realization of this quantum system will make it possible to control the valley degree of freedom in addition to controlling charge and spin degree of freedom of carriers in future electronic devices.

Is Dielectric Mismatch Actually Important in 2D Perovskites?

Understanding and controlling exciton properties are important for the design of 2D semiconductors, such as monolayer transition metal dichalcogenides (TMDCs) and 2D halide perovskites (HPs). This paper demonstrates that the widespread strategy used for the exciton engineering of 2D HPs, based on dielectric mismatch, is flawed since dielectric mismatch has very little correlation with exciton properties. For monolayer TMDCs, however, the dielectric mismatch is shown to be more important.

The Rotating Excitons in 2D Materials: Valley Zeeman Effect and Chirality

The rotational dynamics of the intralayer and interlayer excitons with their inherent momenta of inertia in the monolayer and bilayer transition metal dichalcogenides, respectively, where the new chirality of exciton is endowed by the rotational angular momentum, namely, the formations of left‐ and right‐handed excitons at the +K and −K valleys, respectively, is proposed. It is found that angular momenta exchange between excitons and its surrounding phononic bath result in the large fluctuation of the effective g‐factor and the asymmetry of valley Zeeman splitting observed in most recently experiments, both of which sensitively depend on the magnetic moments provided by the phononic environment. This rotating exciton model not only proposes a new controllable knob in valleytronics, but opens the door to explore the angular momentum exchange of the chiral quasiparticles with the many‐body environment.

Magneto-optical conductivity of monolayer transition metal dichalcogenides in the presence of proximity-induced exchange interaction and external electrical field

Magneto-optical conductivity of monolayer transition metal dichalcogenides in the presence of proximity-induced exchange interaction and external electrical field

Giant Photoluminescence Enhancement of Monolayer WSe2 Using a Plasmonic Nanocavity with On-Demand Resonance.

Monolayer transition metal dichalcogenides (TMDs) are considered promising building blocks for next-generation photonic and optoelectronic devices, owing to their fascinating optical properties. However, their inherent weak light absorption and low quantum yield severely hinder their practical applications. Here, we report up to 18000-fold photoluminescence (PL) enhancement in a monolayer WSe2-coupled plasmonic nanocavity. A spectroscopy-assisted nanomanipulation technique enables the assembly of a nanocavity with customizable resonances to simultaneously enhance the excitation and emission processes. In particular, precise control over the magnetic cavity mode facilitates spectral and spatial overlap with the exciton, resulting in plasmon-exciton intermediate coupling that approaches the maximum emission rate in the hybrid system. Meanwhile, the cavity mode exhibits high radiation directivity, which overwhelmingly directs surface-normal PL emission and leads to a 17-fold increase in the collection efficiency. Our approach opens up a new avenue to enhance the PL intensity of monolayer TMDs, facilitating their implementation in highly efficient optoelectronic devices.

Photo Luminescence and Radiative Carrier Losses in Monolayer Transition Metal Dichalcogenides.

The carrier losses due to radiative recombination in monolayer transition metal dichalcogenides are studied using fully microscopic many-body models. The density- and temperature-dependent losses in various Mo- and W-based materials are shown to be dominated by Coulomb correlations beyond the Hartree-Fock level. Despite the much stronger Coulomb interaction in 2D materials, the radiative losses are comparable-if not weaker-than in conventional III-V materials. A strong dependence on the dielectric environment is found in agreement with experimental results.

Cathodoluminescence emission and electron energy loss absorption from a 2D transition metal dichalcogenide in van der Waals heterostructures.

Nanoscale variations of optical properties in transition metal dichalcogenide (TMD) monolayers can be explored with cathodoluminescence (CL) and electron energy loss spectroscopy (EELS) using electron microscopes. To increase the CL emission intensity from TMD monolayers, the MoSe2flakes are encapsulated in hexagonal boron nitride (hBN), creating van der Waals (VdW) heterostructures. Until now, the studies have been exclusively focused on scanning transmission electron microscopy (STEM-CL) or scanning electron microscopy (SEM-CL), separately. Here, we present results, using both techniques on the same sample, thereby exploring a large acceleration voltage range.
We correlate the CL measurements with STEM-EELS measurements acquired with different energy dispersions, to access both the low-loss region at ultra-high spectral resolution, and the core-loss region. This provides information about the weight of the various absorption phenomena including the direct TMD absorption, the hBN interband transitions, the hBN bulk plasmon, and the core losses of the atoms present in the heterostructure. The S(T)EM-CL measurements from the TMD monolayer only show emission from the A exciton. Combining the STEM-EELS and S(T)EM-CL measurements, we can reconstruct different decay pathways leading to the A exciton CL emission. The comparison with SEM-CL shows that this is also a good technique for TMD heterostructure characterization, where the reduced demands on sample preparation are appealing. To demonstrate the capabilities of SEM-CL imaging, we also measured on a SiO2/Si substrate, quintessential in the sample preparation of two-dimensional materials, which is electron-opaque and can only be measured in SEM-CL. The CL-emitting defects of SiO2make this substrate challenging to use, but we demonstrate that this background can be suppressed by using lower electron energy.

Temperature effects in topological insulators of transition metal dichalcogenide monolayers

Temperature effects in topological insulators of transition metal dichalcogenide monolayers

1T'-transition metal dichalcogenide monolayers stabilized on 4H-Au nanowires for ultrasensitive SERS detection.

Unconventional 1T'-phase transition metal dichalcogenides (TMDs) have aroused tremendous research interest due to their unique phase-dependent physicochemical properties and applications. However, due to the metastable nature of 1T'-TMDs, the controlled synthesis of 1T'-TMD monolayers (MLs) with high phase purity and stability still remains a challenge. Here we report that 4H-Au nanowires (NWs), when used as templates, can induce the quasi-epitaxial growth of high-phase-purity and stable 1T'-TMD MLs, including WS2, WSe2, MoS2 and MoSe2, via a facile and rapid wet-chemical method. The as-synthesized 4H-Au@1T'-TMD core-shell NWs can be used for ultrasensitive surface-enhanced Raman scattering (SERS) detection. For instance, the 4H-Au@1T'-WS2 NWs have achieved attomole-level SERS detections of Rhodamine 6G and a variety of severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) spike proteins. This work provides insights into the preparation of high-phase-purity and stable 1T'-TMD MLs on metal substrates or templates, showing great potential in various promising applications.

Beyond Conventional Charge Density Wave for Strongly Enhanced 2D Superconductivity in 1H-TaS2 Superlattices.

Noncentrosymmetric transition metal dichalcogenide (TMD) monolayers offer a fertile platform for exploring unconventional Ising superconductivity (SC) and charge density waves (CDWs). However, the vulnerability of isolated monolayers to structural disorder and environmental oxidation often degrade their electronic coherence. Herein, an alternative approach is reported for fabricating stable and intrinsic monolayers of 1H-TaS2 sandwiched between SnS blocks in a (SnS)1.15TaS2 van der Waals (vdW) superlattice. The SnS block layers not only decouple individual 1H-TaS2 sublayers to endow them with monolayer-like electronic characteristics, but also protect the 1H-TaS2 layers from electronic degradation. The results reveal the characteristic 3 × 3 CDW order in 1H-TaS2 sublayers associated with electronic rearrangement in the low-lying sulfur p band, which uncovers a previously undiscovered CDW mechanism rather than the conventional Fermi surface-related framework. Additionally, the (SnS)1.15TaS2 superlattice exhibits a strongly enhanced Ising-like SC with a layer-independent Tc of ≈3.0 K, comparable to that of the isolated monolayer 1H-TaS2 sample, presumably attributed to their monolayer-like characteristics and retained Fermi states. These results provide new insights into the long-debated CDW order and enhanced SC of monolayer 1H-TaS2, establishing bulk vdW superlattices as promising platforms for investigating exotic collective quantum phases in the 2D limit.

Resonant Raman Scattering Study of Strain and Defects in Chemical Vapor Deposition Grown MoS2 Monolayers.

The development of bottom-up synthesis routes for semiconducting transition metal dichalcogenides (TMDs) and the assessment of their defects are of paramount importance to achieve their applications. TMD monolayers grown by chemical vapor deposition (CVD) can be subjected to significant strain and, here, Raman and photoluminescence spectroscopies are combined to characterize strain in over one hundred MoS2 monolayer samples grown by CVD. The frequency changes of phonons as a function of strain are analyzed, and used to extract the Grüneisen parameter of both zone-center and edge phonons. Additionally, the intensity of the defect-induced longitudinal acoustic (LA) and transverse acoustic(TA) Raman bands are discussed in relation to strain and electronic doping. The experimental mode-Grüneisen parameters obtained are compared with those calculated by density functional theory (DFT), to better characterize the type of strain and its resulting effects on Grüneisen parameters. The findings indicate that the use of Raman spectra to determine defect densities in 2D MoS2 must be always conducted considering strain effects. To the best of the authors' knowledge, this work constitutes the first report on double resonance Raman processes studied as a function of strain in 2D-MoS2. The new approach to obtain the Grüneisen parameter from zone-edge phonons in MoS2 can also be extended to other 2D semiconducting TMDs.

In Operando Study of Charge Modulation in MoS2 Transistors by Excitonic Reflection Microscopy.

Monolayers of transition metal dichalcogenides (2D TMDs) experience strong modulation of their optical properties when the charge density is varied. Indeed, the transition from carriers composed mostly of excitons at low electron density to a situation in which trions dominate at high density is accompanied by a significant evolution of both the refractive index and the extinction coefficient. Using optical interference reflection microscopy at the excitonic wavelength, this (n, κ)-q relationship can be exploited to directly image the electron density in operating TMD devices. In this work, we show how this technique, which we call XRM (excitonic reflection microscopy), can be used to study charge distribution in MoS2 field-effect transistors with subsecond throughput, in wide-field mode. Complete maps of the charge distribution in the transistor channel at any drain and gate bias polarization point (VDS, VGS) are obtained, at ∼3 orders of magnitude faster than with scanning probe techniques such as KPFM. We notably show how the advantages of XRM enable real-time mapping of bias-dependent charge inhomogeneities, the study of resistive delays in 2D polycrystalline networks, and the evaluation of the VDS vs VGS competition to control the charge distribution in active devices.

Spin-Polarized Charge Separation at Two-Dimensional Semiconductor/Molecule Interfaces.

Spin-polarized electrons can improve the efficiency and selectivity of photo- and electro-catalytic reactions, as demonstrated in the past with magnetic or magnetized catalysts. Here, we present a scheme in which spin-polarized charge separation occurs at the interfaces of nonmagnetic semiconductors and molecular films in the absence of a magnetic field. We take advantage of the spin-valley-locked band structure and valley-dependent optical selection rule in group VI transition metal dichalcogenide (TMDC) monolayers to generate spin-polarized electron-hole pairs. Photoinduced electron transfer from WS2 to fullerene (C60) and hole transfer from MoSe2 to phthalocyanine (H2Pc) are found to result in spin polarization lifetimes that are 1 order of magnitude longer than those in the TMDC monolayers alone. Our findings connect valleytronic properties of TMDC monolayers to spin-polarized interfacial charge transfer and suggest a viable route toward spin-selective photocatalysis.

Strong Coupling of Two-Dimensional Excitons and Plasmonic Photonic Crystals: Microscopic Theory Reveals Triplet Spectra.

Monolayers of transition metal dichalcogenides (TMDCs) are direct-gap semiconductors with strong light-matter interactions featuring tightly bound excitons, while plasmonic crystals (PCs), consisting of metal nanoparticles that act as meta-atoms, exhibit collective plasmon modes and allow one to tailor electric fields on the nanoscale. Recent experiments show that TMDC-PC hybrids can reach the strong-coupling limit between excitons and plasmons, forming new quasiparticles, so-called plexcitons. To describe this coupling theoretically, we develop a self-consistent Maxwell-Bloch theory for TMDC-PC hybrid structures, which allows us to compute the scattered light in the near- and far-fields explicitly and provide guidance for experimental studies. One of the key findings of the developed theory is the necessity to differentiate between bright and originally momentum-dark excitons. Our calculations reveal a spectral splitting signature of strong coupling of more than 100 meV in gold-MoSe2 structures with 30 nm nanoparticles, manifesting in a hybridization of the plasmon mode with momentum-dark excitons into two effective plexcitonic bands. The semianalytical theory allows us to directly infer the characteristic asymmetric line shape of the hybrid spectra in the strong coupling regime from the energy distribution of the momentum-dark excitons. In addition to the hybridized states, we find a remaining excitonic mode with significantly smaller coupling to the plasmonic near-field, emitting directly into the far-field. Thus, hybrid spectra in the strong coupling regime can contain three emission peaks.

Anomalous redshift in interlayer exciton emission with increasing twist angle in WSe2/MoSe2 heterostructures

Van der Waals heterostructures utilizing semiconducting transition metal dichalcogenide (TMDC) monolayers have surfaced as compelling candidates due to their intriguing optical characteristics, which can be effectively controlled by the manipulation of the stacking twist angle. This study investigates the intricate correlation between twist angle, band offset, and interlayer exciton emission within twisted WSe2/MoSe2 heterostructures. Our findings suggest a crucial influence of monolayer stacking order on the band offset and the dipole orientation in twisted heterostructures that leads to either blueshift or redshift in emission energy. Herein, we fabricate heterobilayers with twist angles varying from 1 ∘ to 56 ∘ and observe an anomalous redshift energy of 100 meV in the interlayer exciton emission. Additionally, photoluminescence excitation spectroscopy measurements highlight the systematic twist angle dependence of intralayer exciton resonances, indicating significant angle dependent effects on individual monolayer bandgaps and on the interlayer coupling strength. Our fundamental study of exciton resonances provides comprehensive insights into the nuanced interplay between twist angle, dipole orientation, and dielectric asymmetry, providing a deeper understanding of the factors governing the optical properties of layered TMDC heterostructures.

Inducing room-temperature valley polarization of excitonic emission in transition metal dichalcogenide monolayers

The lowest energy states in transition metal dichalcogenide (TMD) monolayers follow valley selection rules, which have attracted vast interest due to the possibility of encoding and processing of quantum information. However, these quantum states are strongly affected by temperature-dependent intervalley scattering leading to complete valley depolarization, which hampers practical applications at room temperature. Therefore, for achieving clear and robust valley polarization in TMD monolayers one needs to suppress parasitic depolarization processes, which is the central challenge in the growing field of valleytronics. Here, in electron-doping experiments on TMD monolayers, we show that strong doping levels beyond 1013 cm−2 can induce 61% and 37% valley contrast at room temperature in tungsten diselenide and molybdenum diselenide monolayers, respectively. Our findings demonstrate that charged excitons in TMD monolayers hold the potential for the development of efficient valleytronic devices functional at 300 K.

Effect of two-dimensional non-local screening on characteristics of transition metal dichalcogenide monolayers

On the basis of the theory developed for the dielectric function of atomic thin layer insulating materials (Cudazzo et al 2011 Phys. Rev. B 84 085406), some characteristics of transition metal dichalcogenide monolayers are calculated in the framework of variational method. This method initially was designed to work for very weak or strong magnetic fields, but it is also in very good agreement with the numerical results obtained for intermediate magnetic fields. The expressions of the energy and effective radius of the ground impurity state, depending on the effective screening parameter of the problem, are obtained both without and with magnetic fields.