Valley filtering using magnetic proximity effect in monolayer WS[formula omitted]

Abstract

A quantum system implanted with monolayer transition metal dichalcogenide (TMDC) is proposed as a valley filter based on a ballistic point contact with zigzag edges. A quantum point contact (QPC) structure is formed in the middle of scattering region and the geometrical size of the QPC is varied by electrostatic gate potentials. The energy band structures and electronic transport properties are investigated using a two-bands k⋅p Hamiltonian by using parameters from the density functional theory (DFT) calculations. The magnetic proximity effect from an Eu-terminated ferromagnetic substrate (EuS) generates a giant valley splitting in the energy of the monolayer WS2 nanoribbon. The conductance is limited by reducing the width and by increasing the length of the QPC because conductance is strongly related to the number of transmission channels and the amounts of back scatterings at the QPC. The polarity of valley current can be manipulated by applying a local gate potential in the QPC region, where the manipulated polarity is limited to well defined K′ polarization only. The lateral hetero materials on both sides of the QPC or lateral hetero ferromagnetic substrate is necessary to have desired valley and spin polarities of current by manipulating the local gate potential. The experimental realization of this quantum system will make it possible to control the valley degree of freedom in addition to controlling charge and spin degree of freedom of carriers in future electronic devices.