Molecular Beam Chemical Vapor Deposition Research Articles

Temperature dependence of synchrotron radiation induced growth initiation in the molecular beam chemical vapor deposition of Al on a SiO 2 surface

Synchrotron radiation (SR) irradiation effect in the Al thermal growth on a SiO 2 surface is studied by using a molecular-beam chemical vapor deposition (MB-CVD) technique. Al growth is observed only on the SR-irradiated area at 200°C. The substrate temperature dependence of the SR-assisted Al growth rate is found to be non-monotonous: it rises from 150°C to reach a peak at 250°C, then falls to reach a minimum at 300°C, and rises again over 300°C. The origins of this non-monotonous temperature dependence are investigated by chemical shifts analysis in Auger electron spectroscopy (AES). We find that the peculiar temperature dependence is attributed to the change of the chemical bonding nature of the initiation layers formed by SR irradiation.

Direct projection patterning of aluminum on the SiO 2 surface by using synchrotron radiation induced growth initiation of thermal chemical vapor deposition

The growth control of Al on SiO 2 surfaces is studied using synchrotron radiation (SR) irradiation on molecular-beam chemical vapor deposition (CVD) with dimethylaluminum hydride (DMAH). The thermal CVD reaction is found to be initiated by the SR irradiation of the initial stage of the CVD. Once the CVD reaction is initiated, it continues even after the irradiation is stopped. This effect is caused by an initiation layer consisting of Al and C formed by SR-induced CVD. By using this initiation phenomenon, the projection patterning of Al is successfully demonstrated without conventional photolithography using photo-resist.