We report the first Hall effect and resistivity measurements on strained-layer superlattices (SLS’s) in the (In,Ga)As system. The samples, grown by molecular beam epitaxy, had 60 periods of alternating, 120-Å-thick In0.2Ga0.8 As and GaAs layers. Both uniform-doped and modulation-doped structures (with Si donors) were studied. Low-temperature mobilities of over 3×104 cm2/Vs were obtained for structures with doping in only the central 30-Å region of each GaAs layer. Our results are comparable to reported results on similar (Al,Ga)As superlattices, confirming that high crystalline quality can be obtained in SLS’s with significant mismatch (∼1.4%) and many interfaces (>100).