Abstract
Modulation-doped GaAs/AlAs heterojunctions have been successfully grown for the first time. Liquid nitrogen electron mobility in excess of 100 000 cm2 V−1 s−1 has been obtained at a sheet electron concentration of 3.27×1011 cm−2. The interface properties studied by reflection electron diffraction are consistent with results of electrical measurement. The advantages of modulation-doped structures with high aluminum concentrations are discussed.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
