physica status solidi (a)Volume 118, Issue 2 p. K73-K78 Short Note A new model of transconductance for SOI gated double injection structures G. Dimopoulos, G. Dimopoulos Laboratoire de Physique des Composants à Semiconducteurs, associé au C.N.R.S., Institut National Polytechnique de Grenoble A. Onassis Foundation Scholar.Search for more papers by this author G. Dimopoulos, G. Dimopoulos Laboratoire de Physique des Composants à Semiconducteurs, associé au C.N.R.S., Institut National Polytechnique de Grenoble A. Onassis Foundation Scholar.Search for more papers by this author First published: 16 April 1990 https://doi.org/10.1002/pssa.2211180234 ENSERG, BP 257, F-38016 Grenoble Cedex, France. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Volume118, Issue216 April 1990Pages K73-K78 RelatedInformation