Abstract
By considering several secondary effects including the channel length modulation, mobility degradation, drain induced barrier lowering, and threshold voltage variation, an accurate saturation transconductance model for short-channel MOSFETs is developed. The calculated values of saturation transconductance agree well with the BSIM3 simulation results and the experimental results for devices with effective channel length in the range of 0.44-10 μm. This model has the advantages of less number of model parameters and can be used to analyze the small signal performance of analog circuits.
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