IGBT Model Research Articles

Research on the Multiphysics Field-Circuit Coupling Model of Press Pack IGBT Considering the Application of Hybrid HVDC Breakers

Press pack insulated gate bipolar transistor (PP IGBT) is suitable for the hybrid high voltage direct current (HVdc) breaker to clear the fault current of the flexible HVdc transmission system with its advantages of double-side cooling, short-circuit failure mode, and easy to connect in series. However, it should have the ability to transmit the fault current, which is up to five or six times of its rated current, within several milliseconds depending on the distances between two stations without external cooling system. The junction temperature of PP IGBT will increase sharply and it is not possible to be measured during that situation. Therefore, the accurate prediction of junction temperature is extremely important for the packaging design of PP IGBT according to its working condition. In this article, an electro-thermo-mechanical multiphysics field-circuit coupling model of PP IGBT, which is coupled with the electrical, thermal, and mechanical fields, is proposed to predict the collector current, clamping force, and junction temperature. The 3-D mechanical model is decoupled with the 1-D electro-thermal Cauer network model to simplify this multiphysics model without reducing its accuracy. Both the normal and worst working conditions are analyzed through this multiphysics field-circuit model.

A new Modeling of IGBT and Freewheeling Diode based on Electrical Behavioral with Independently of Time Condition

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Compact Modeling of IGBT Charging/Discharging for Accurate Switching Prediction

The trench-type IGBT is one of the major devices developed for very high-voltage applications, and has been widely used for the motor control of EVs as well as for power-supply systems. In the reported investigation, the accurate prediction of the power dissipation of IGBT circuits has been analyzed. The main focus is given on the carrier dynamics within the IGBTs during the switching-off phase. It is demonstrated that discharging and charging at the IGBT’s gate-bottom-overlap region, where electron discharging is followed by hole charging, has an important influence on the switching performance. In particular, the comparison of long-base and short-base IGBTs reveals, that a quicker formation of the neutral region within the resistive base region, as occurring in the long-base IGBT, leads to lower gate-bottom-overlap capacitance, thus realizing faster electron discharging and hole charging of this overlap region.

Real-Time Hardware-in-the-Loop Emulation of High-Speed Rail Power System With SiC-Based Energy Conversion

Real-time device-level hardware-in-the-loop (HIL) emulation of a complete high-speed rail system is challenging due to its complex modeling and high computing demand. With higher energy-efficient and switching frequency semiconductor material being found and adopted in the power electronic electrified traction application, there is a need to develop such new material based real-time device-level power electronic models in the modern and future traction system to estimate and verify the device switching transients, energy efficiency, and power quality improvement capability. This paper proposes a real-time SiC IGBT model based on the Wiener-Hammerstein configuration. A complete Beijing-Shanghai AC traction application is utilized as the study case, implemented on the hybrid multiprocessor system-on-chip (MPSoC) and field-programmable gate array (FPGA) platform, to verify both the system-level and device-level performance of the proposed model with comparisons to commercial software PSCAD/EMTDC and SaberRD. The dedicated hardware implementation enabled model execution at $10~ns$ for device-level transients and 10 μs for system-level transients.

Research on Modeling Simulation and Parameters Extraction of IGBT

IGBT is the key component of electric vehicle motor control system. In order to control IGBT and motor accurately and effectively, the structure of MOSFET and N-IGBT is given based on semiconductor principle. The four-layer PNPN structure of IGBT is analyzed. The equivalent circuit model of IGBT based on MOSFET, PNP and NPN transistor is established. Combining with Infineon IGBT chip and its application data, the collector current transmission characteristic curves under different gate source voltages and environment temperature are given. The simulation method of the same characteristic curves can be obtained by setting IGBT micro-variable equivalent circuit model parameters using Q3D and Simplorer. The model parameters such as parasitic capacitance, parasitic inductance, junction resistance and so on of the IGBT chip are determined and extracted. Thus the accurate model of IGBT chip is established. The simulation results show that the modeling and parameters extraction methods can effectively extract the precise parameters of IGBT, and can provide precise data for the analysis and establishment of the equivalent circuit model of IGBT.

Study on the Cauer Thermal Network Model of Press Pack IGBTs

Press Pack IGBTs (PP IGBTs) has been gradually applied in the high voltage and high current areas, for its high power density, double side cooling and high reliability. The cauer thermal network model of PP IGBTs is proposed based on the boundary effect according to heat spreading angle in this paper, and the difference between the IGBT and FRD chips is considered in this model. The thermal contact resistance among multi-layers within PP IGBTs, which is calculated and corrected by the experiment, is also included in this model. The finite element method (FEM) model is used to verify the accuracy of the cauer model, because the accurate measurement of the junction to case thermal resistance of PP IGBTs is extremely difficult. The thermal characteristic of PP IGBTs under different clamping force can be acquired through the cauer thermal model. It has significant influence on the thermal resistance optimization, as the thermal resistance percentage of the components in PP IGBTs can be obtained from the cauer thermal model.

A 2-D Nonlinear Ambipolar Diffusion Equation Model of an IGBT and Its Numerical Solution Methodology

To consider the nonlinear and 2-D characteristics of the carriers in the draft region of a planar-gate insulated-gate bipolar transistor, which are not properly modeled in the existing physics-based IGBT models, a 2-D ambipolar diffusion equation model is proposed and solved using the finite-element method. Moreover, a numerically iterative procedure is introduced to simply and efficiently solve the 2-D nonlinear finite-element equations. The numerical results of the transient performances obtained using the proposed model and solution methodology show a good agreement with those of the experiment ones, showing the high accuracy and feasibility of the proposed model and method.

Electric Field Analysis of Press-Pack IGBTs

High voltage IGBT module is the ideal option for the VSC-HVDC power transmission application. At present, wire-bonded technology and press-pack technology are available packaging technologies for high voltage IGBT. The press-pack IGBTs have such advantages as low inductance, low thermal impedance and short circuit failure mode than the wire-bonded IGBT module, which especially suit for high voltage power transmission application by series connection. However, the electrical insulation failure modes of press-pack IGBTs are much less known with limited literature published. In this paper, we presented the electric field analysis of a 3D press-pack IGBT model under DC rating voltage test condition. The electric field distribution of the press-pack IGBT stack was solved as an electrostatic problem by employing the finite element method. The results revealed the potential electrical insulation failure modes of the press-pack IGBTs: corona discharge at the edge of silver plate, partial discharge at the micro gap between die and PEEK frame and creeping discharge at the surface of PEEK frame.

A finite difference method modeling for IGBT and diode in PSPICE

In this paper, a novel modeling approach for both PiN diode and IGBT is presented. In this model, the carrier diffusion equation, which retains the distributed nature of charge dynamics in bipolar power devices, is solved directly by finite difference method in PSPICE. The physical basis of this model and some practical considerations are introduced. Compared with conventional Fourier based IGBT model, the presented model keeps higher simulation speed and comparable high accuracy. These features were also verified by simulations and experiments.

Accurate SPICE Modeling of Reverse-Conducting IGBTs Including Self-Heating Effects

In this paper, a temperature-dependent compact SPICE model of reverse-conducting IGBTs (RC-IGBTs) is presented. The proposed solution is based on a quasi-two-dimensional (2-D) approach, with the use of IGBT and p-i-n diode subcircuits suitably connected to take into account the inner interactions among the two devices. The resulting device model is derived through physical considerations on the RC-IGBT internal behavior, carried out by means of wide area TCAD 2-D simulations. Transversal current path, localized lifetime control effects, and turn-on dynamics are also included into the model. The model shows good robustness properties, even in demanding numerical conditions. Validation of the SPICE model with experiments performed on a 1.2-kV 30-A commercial device, in both static and dynamic conditions, demonstrates its remarkable correctness and accuracy. To further confirm the applicability of the proposed model in real-operating conditions, a quasi-resonant converter has been realized and the measurements on the realized circuit have been successfully compared with the results obtained with the proposed model.

Research on Calibration Method of 7kV Single Voltage Pulse for IGBT Models Test System

Power IGBT module is widely used in high power conversion applications in various fields because of the advantages of high voltage and high current applications. In order to avoid the influence of temperature rise to the device measurement, pulse test method is widely used to test its static and dynamic parameters, So there are single high pulse voltage source and single pulse high current source in power IGBT modules test instruments. For now in the metrology field, how to calibrate its Single High Pulse Voltage source is a difficult problem. Now the amplitude of single high pulse voltage source is above 7kV with the pulse width as 50 microseconds. Based on detailed research on the test principles of the power IGBT modules test instruments, the pulse high voltage divider and the data acquisition unit are used to setup a calibration device for Single High Pulse Voltage source to calibrate the amplitude of Single High Pulse Voltage source. Resistors are usedto develop the pulse high voltage divider, and did carefully research on the pulse response time, voltage dispersion, voltage regulation of the pulse high voltage divider. Also the data acquisition unit with 20MHz bandwidth and 100MS/s acquisition rate is evaluated through tests including vertical accuracy test, bandwidth test, rise time test, comparison test and etc.. Through above relevant test results, with the comprehensive consideration of the influence of each measurement uncertainty component, It have finished that the evaluation of the uncertainties of the amplitude measurement for Single High Pulse Voltage source. The uncertainty of measurement is better than 2% with the coverage factor as 2.

Electro-Thermal TCAD Model for 22 kV Silicon Carbide IGBTs

This paper presents the current progress in the development of an electro-thermal numerical model for 22 kV 4H-silicon carbide IGBTs. This effort involved the creation of a TCAD model based on doping profiles and structural layers to simulate the steady-state and switching characteristics of recently-fabricated experimental devices. The technical challenge of creating this high voltage SiC IGBT model was incorporating semiconductor equations with sub-models representing carrier mobility, generation, recombination, and lattice heat flow effects with parameters conditioned for 4H-silicon carbide material. Simulations of the steady-state and switching characteristics were performed and later verified with laboratory measurements for an N-type SiC IGBT rated for 22 kV with an active area of 0.37 cm2 and a drift region of 180 μm.

Modeling of the New Transient Behavioral Spice Model of IGBTs Including Temperature Effect

Modeling of the New Transient Behavioral Spice Model of IGBTs Including Temperature Effect

A robust electro-thermal IGBT SPICE model: Application to short-circuit protection circuit design

An optimized electro-thermal IGBT SPICE model based on the Kraus model was developed to allow reliable simulation at application level. A particular emphasis to the temperature dependence of physical parameters was given for both the on-state and breakdown conditions. The model was experimentally validated in steady state and transient operation on a Field-Stop trench-gate 30A–600V commercial IGBT device. The effectiveness of the convergence–accuracy aspects was proved for the proposed model. The application to the short-circuit protection circuit design for a hard switched fault in an inverter motor-drive application was also analysed. The ability of the proposed IGBT model was experimentally verified with a simplified-equivalent circuit where a short condition was forced on the load, enabling the desaturation protection by the IGBT driver. The results show an accurate prediction of the device electro-thermal behaviour under short-circuit conditions, with a possible optimal design of the desaturation circuit parameters when the device experiences hard-switched-fault or fault-under-load events.

Improvement of High-Power Three-Level Explosion-Proof Inverters Using Soft Switching Control Based on Optimized Power-Loss Algorithm

The high-power three-level explosion-proof inverters demand high thermal stability of power devices, and a set of theories and methods is needed to achieve an accurate power-loss calculation of power devices, to establish heat dissipation model, and ultimately to reduce the power loss to improve thermal stability of system. In this paper, the principle of neutral point clamped three-level (NPC3L) inverter is elaborated firstly, and a fourth-order RC equivalent circuit of IGBT is derived, on which basis the power-loss model of IGBT and the optimized maternal power-loss thermal model, using an optimized power-loss algorithm, are established. Secondly, in accordance with the optimized maternal power-loss thermal model, the generic formulas of power-loss calculation are deduced to calculate the power-loss modification values of NPC3L and soft switching three-level (S3L) inverters, which will be the thermal sources during thermal analysis for maternal power-loss thermal models. Finally, the experiment conducted on the 2.1 MW experimental platform shows that S3L inverter has the same excellent output characteristics with NPC3L inverter, reduces the power loss significantly by 213 W in each half-bridge, and decreases the temperature by 10°C, coinciding with the theoretical calculation, which verifies the accuracy of optimized power-loss algorithm and the effectiveness of the improvement.

IGBTs working in the NDR region of their I-V characteristics

This paper demonstrates the detailed work on high voltage IGBTs using simulations and experiments. The current-voltage characteristics were measured up to the break through point in forward bias operating region at two different temperatures for a 50 A/4.5 kV rated IGBT chip. The experimentally measured data were in good agreement with the simulation results. It was also shown that the IGBTs are able to clamp high collector-emitter voltages although a low gate turn-off resistor in combination with a high parasitic inductance was applied. Uniform 4-cell and 8-cell IGBT models were created into the TCAD device simulator to conduct an investigation. An engendered filamentation behaviour during short-circuit turn-off was briefly reviewed using isothermal as well as thermal simulations and semiconductor approaches for development of filaments. The current filament inside the active cells of the IGBT is considered as one of the possible destruction mechanism for the device failure.

Diagnosis of Intermittent Faults in IGBTs Using the Latent Nestling Method with Hybrid Coloured Petri Nets

This paper presents a fault diagnosis application of the Latent Nestling Method to IGBTs. The paper extends the Latent Nestling Method based in Coloured Petri Nets (CPNs) to hybrid systems in such a manner that IGBTs performance can be modeled. CPNs allow for an enhanced capability for synthesis and modeling in contrast to the classical phenomena of combinational state explosion when Finite State Machine methods are applied. We present an IGBT model with different fault modes including those of intermittent nature that can be used advantageously as predictive symptoms within a predictive maintenance strategy. Ageing stress tests have been experimentally applied to the IGBTs modules and intermittent faults are diagnosed as precursors of permanent failures. In addition, ageing is validated with morphological analysis (Scanning Electron Microscopy) and semiqualitative analysis (Energy Dispersive Spectrometry).

Dynamic IGBT model. Application to top-metal ageing effects on chip electro-thermal distributions during short circuit operations

Dynamic IGBT model. Application to top-metal ageing effects on chip electro-thermal distributions during short circuit operations

Research on Calibration of Power IGBT Model Test Equipment

Power IGBT module and its dynamic and static test equipments are widely used. How to calibrate the IGBT module test equipments is in great demand. Based on the investigation of domestic and foreign method for power IGBT module test equipment calibration, the calibration method of the important parameters, pulse current, for this equipment were researched in this passage. the Rogowski coil and the data acquisition unit were used to realize the pulse current amplitude (up to 5000A) calibration. Calibration device for power IGBT module test equipment was setup, calibration specification for power IGBT module test equipment was authorized to ensure the values of power IGBT module test equipment.

IGBT参数建模与仿真分析

本论文首先在对IGBT的结构，工作原理以及特性进行深入分析的基础上，利用matlab/simulink软件搭建IGBT的简化模型；其次对IGBT失效问题进行理论分析，分别从IGBT失效因素，失效机理等方面进行深入分析、总结与探讨；再次根据仿真结果验证由于IGBT工作环境等因素影响使其不断受到电热冲击，导致模块内部键合线发生蠕动，芯片内部产生疲劳裂痕，最终导致失效的结论，从而建立起能够预测IGBT寿命的模型。In this paper, based on the analysis of the structure and work principle and characteristics of IGBT, the simplified model of IGBT by matlab/simulink is built. The problems of the IGBT failure are analyzed theoretically from the perspectives of IGBT failure factors and failure mechanism, re-spectively. According to simulation results, it was verified that IGBT is subjected to constant electric shocks due to work environment, etc., then, module internal bonding wire begins to creep and fatigue cracks occur, which eventually lead to failure. Thus, the model can be used to predict the lifetime of the IGBT.