Bulk Mobility Research Articles

Dopant Activation Comparison in Phosphorus and Nitrogen Implanted 4H-Silicon Carbide

Bulk mobility and dopant activation of implanted species into 4H-SiC plays a crucial role in the carrier conduction, blocking behavior, and channel properties of a 4H-SiC vertical power MOSFET. Nitrogen and phosphorus ion implantation became the norm as n-type dopants for 4H-SiC. Therefore, the doping and temperature behavior of both species in 4H-SiC needs to be well characterized. In this study, we report a comparison in electrical characteristics between nitrogen and phosphorus implanted 4H-SiC as a function of temperature for various doping levels. For this purpose, 4-point van der Pauw samples are prepared, resistivity and Hall measurements are conducted. We found that resistivities drop as temperature increases from 140 K with phosphorus having higher resistivities at all implanted doping concentrations. The carrier concentrations increase with increase of temperature, indicating incomplete ionization of dopants. Mobilities drop at low temperature due to increased impurity scattering, reaches a peak near 300 K and drops at higher temperature due to increased phonon scattering. From the obtained data, using a two-level charge neutrality equation, the activation percentage and ionization energies of dopants in hexagonal and cubic sites for both species are extracted and compared.

Solving the retention time repeatability problem of hydrophilic interaction liquid chromatography

Hydrophilic interaction (liquid) chromatography (HILIC) has become the first choice LC mode for the separation of hydrophilic analytes. Numerous studies reported the poor retention time repeatability of HILIC. The problem was often ascribed to slow equilibration and insufficient re-equilibration time to establish the sensitive semi-immobilized water layer at the interface of the polar stationary phase and the bulk mobile phase. In this study, we compare retention time repeatability in HILIC for borosilicate glass and PFA (co-polymer of tetrafluoroethylene and perfluoroalkoxyethylene) solvent bottles. During this study, we observed peak patterns shifting towards higher retention times (for metabolites and peptides) and lower retention times (oligonucleotide sample) with ongoing analysis time when standard borosilicate glass bottles were used as solvent reservoirs. It was hypothesized that release of ions (sodium, potassium, borate, etc.) from the borosilicate glass bottles leads to alterations (thickness and electrostatic screening effects) in the semi-immobilized water layer which is adsorbed to the polar stationary phase surface under acetonitrile-rich eluents in HILIC with concomitant shifts in retention. When PFA solvent bottles were employed instead of borosilicate glass, retention time repeatability was greatly improved and changed from average 8.4 % RSD for the tested metabolites with borosilicate glass bottles to 0.14 % RSD for the PFA solvent bottles (30 injections over 12 h). Similar improvements were observed for peptides and oligonucleotides. This simple solution to the retention time repeatability problem in HILIC might contribute to a better acceptance of HILIC, especially in fields like targeted and untargeted metabolomics, peptide and oligonucleotide analysis.

Different microbial functional traits drive bulk and rhizosphere soil phosphorus mobilization in an alpine meadow after nitrogen input

Enhanced nitrogen (N) input is expected to influence the soil phosphorus (P) cycling through biotic and abiotic factors. Among these factors, soil microorganisms play a vital role in regulating soil P availability. However, the divergent contribution of functional microorganisms to soil P availability in the rhizosphere and bulk soil under N addition remains unclear. We conducted an N addition experiment with four N input rates (0, 5, 10, and 15 g N m−2 year−1) in an alpine meadow over three years. Metagenomics was employed to investigate the functional microbial traits in the rhizosphere and bulk soil. We showed that N addition had positive effects on microbial functional traits related to P-cycling in the bulk and rhizosphere soil. Specifically, high N addition significantly increased the abundance of most microbial genes in the bulk soil but only enhanced the abundance of five genes in the rhizosphere soil. The soil compartment, rather than the N addition treatment, was the dominant factor explaining the changes in the diversity and network of functional microorganisms. Furthermore, the abundance of functional microbial genes had a profound effect on soil available P, particularly in bulk soil P availability driven by the ppa and ppx genes, as well as rhizosphere soil P availability driven by the ugpE gene. Our results highlight that N addition stimulates the microbial potential for soil P mobilization in alpine meadows. Distinct microbial genes play vital roles in soil P availability in bulk and rhizosphere soil respectively. This indicates the necessity for models to further our knowledge of P mobilization processes from the bulk soil to the rhizosphere soil, allowing for more precise predictions of the effects of N enrichment on soil P cycling.

Atomic‐Scale Engineering for New Generation Air Electrode Materials of Solid Oxide Cells: Quintuple Perovskite Sm2Ba3Co2Fe3O15‐δ with Twinned Crystal Structure

AbstractThe catalytic activity and thermomechanical stability of electrode materials are crucial for the efficient operation of reversible solid oxide cell (rSOC). However, these two traits often impose limitations on one another. In this work, a unique quintuple perovskite Sm2Ba3Co2Fe3O15‐δ (SBCF‐5L), comprising of A‐site ordered double perovskite layers and disordered simple perovskite layers, is reported as a high‐performance air electrode material for rSOC. The designed SBCF‐5L material exhibits a highly symmetrical tetragonal structure (pseudo‐cubic) with an isotropic thermal expansion and a limited chemical expansion. The formation barriers for oxygen vacancies are comparable between A‐site ordered layers and disordered simple perovskite layers, resulting in a high concentration of oxygen vacancies and 3D‐like bulk mobility of oxygen ions. Perpendicularly twinned nanodomains are developed in the particles, providing more active sites for surface electrode reaction. When applied in electrolyte‐supported cells, the SBCF‐5L electrode exhibits excellent electrochemical performance with low polarization resistance of 0.017 Ω cm−2, high power density of 1.01 W cm−2 and high electrolysis current density of 1.08 A cm−2 at 1.3 V at 800 °C in fuel cell and electrolysis modes, respectively. This study introduces a new approach of atomic‐scale engineering to rationally design a new generation of air electrodes for rSOC.

Mg activation anneal of the p-GaN body in trench gate MOSFETs and its effect on channel mobility and threshold voltage stability

This work addresses the impact of the Mg activation anneal step and the resulting acceptor concentration on the channel mobility and VT stability of vertical MOSFETs. Increasing the annealing time with N2 only ambient and the annealing temperature with O2 in the ambient is shown to be effective in increasing the channel acceptor concentration. When the effective acceptor concentration is increased, the mobility is degraded due to a transition in the main scattering mechanism from Coulomb to surface roughness scattering. Degradation of the on-state current and maximum transconductance at high operating temperatures was linked to bulk mobility degradation of the drift layer due to lattice scattering. The two Mg activation annealing conditions considered here show different trends with regard to the threshold voltage stability, while N2 only ambient did not impact this parameter, including O2 increased threshold voltage instability. It is shown that increasing the Mg chemical concentration in the p-GaN layer degrades channel mobility and threshold voltage stability, irrespectively of the effective acceptor concentration, providing evidence for degradation of the channel/dielectric interface characteristics with higher Mg chemical concentration. This study shows that it is possible to achieve very low threshold voltage hysteresis and high channel mobility by reducing the Mg chemical concentration while maintaining high effective acceptor concentration. These results provide key insights for the development of vertical GaN FETs.

Carrier transport in bulk and two-dimensional Zn2(V,Nb,Ta)N3 ternary nitrides.

Density functional theory-based simulations are applied to study the electronic structures, carrier masses, carrier mobility and carrier relaxation times in bulk and two-dimensional (2D) Zn2(V,Nb,Ta)N3 ternary nitrides. Bulk Zn2(V,Nb,Ta)N3 possess moderate band gap sizes of 2.17 eV, 3.11 eV, and 3.40 eV, respectively. Two-dimensional Zn2(V,Nb,Ta)N3 have slightly higher band gap sizes of 2.77 eV, 3.33 eV, and 3.23 eV, respectively. Carrier mass, carrier mobility and carrier relaxation time are found to be anisotropic in all the studied structures. Bulk and 2D samples show an order of magnitude higher electron mobility compared to hole mobility. The highest electron mobility in bulk Zn2NbN3 and Zn2TaN3 is about ∼103 cm2 V-1 s-1. Importantly, for 2D Zn2NbN3, an abnormally high electron mobility of 1.67 × 104 cm2 V-1 s-1 is observed, which is not inferior to the highest known electron mobility values in 2D materials. Such a high electron mobility in 2D Zn2NbN3 can be attributed to a strong delocalization of the conduction band minimum, which is responsible for electron transport. Therefore, this work opens up new materials for high performance nanodevices, such as tandem solar cells and field-effect transistors. This study also provides deep physical insights into the nature of carrier transport mechanisms in bulk and 2D Zn2(V,Nb,Ta)N3 ternary nitrides.

(Invited) Advanced Design Concepts for Vertical Gallium Nitride MOSFETs

Wide-bandgap semiconductors have a significant advantage over conventional Si-based electronics by leveraging materials properties to achieve higher breakdown voltage, lower on-resistance, and high-frequency operation. Gallium nitride (GaN) is of interest for vertical device architectures but directly competes with the already established silicon carbide (SiC) power devices. In the case of vertical GaN rectifiers which are unipolar figure-of-merit limited, the materials advantage of GaN provides a modest gain in terms of critical electric field and very slight gains in bulk mobility and saturation velocity, while being at a disadvantage in terms of thermal conductivity compared to SiC. However, despite still being a very immature technology, vertical GaN MOSFETs have demonstrated channel mobilities upwards of 200 cm2/V·s, over three times that of SiC-based MOSFETs. For 1200V-class devices, channel mobility directly contributes to a significant portion of device on-resistance, and it is therefore expected that vertical GaN MOSFETs would offer a substantial performance advantage compared to SiC MOSFETs. Despite this, the development of vertical GaN devices that demonstrate this theoretical potential faces many challenges. Several fundamental limitations exist within the manufacturing process that prohibit GaN devices from directly mirroring the design rules for similar SiC devices. In this talk, we will discuss several key design concepts recently developed for vertical GaN MOSFETs which serve to address several critical issues for GaN.Limitations in selective-area doping for GaN provide an additional challenge in designing edge termination structures, advanced features that protect the gate dielectric during the blocking state, and provides restrictions on minimizing cell pitch. Proper edge termination design is required to reach an avalanche voltage near the theoretical limit and avoid early breakdown. We present an optimized design point for the edge termination with a good match between theoretical and experimental data using a step-etched junction termination extension. Despite a well-designed edge termination, early breakdown will occur in the gate dielectric at the bottom of the gate trench due to field crowding in the dielectric at high blocking voltages. We propose a new method for protecting the gate dielectric by means of a buried field shield formed by an etch-and-regrowth process. Experimental data shows this gate dielectric failure can occur as early as 1/3rd of the designed blocking voltage. The field shield design is shown in simulation to sufficiently reduce the electric field in the gate dielectric to below 4 MV/cm with minimal or no derating of the device depending on geometry of the shield. Additional methods will be presented on new techniques to minimize cell pitch, a critical factor necessary to compete against SiC. Cell pitch minimization not only reduces on-resistance and gate-charge trade-offs, but it is also a driving factor to reduce cost and increase die density on wafer. Finally, techniques have been developed for advanced metal contact designs specific to the trench MOSFET, which further aid in reducing cell pitch. This work was supported by the Electric Drivetrain Consortium managed by Susan Rogers of DOE’s Vehicle Technologies Office. Sandia National Laboratories is a multi-mission laboratory managed and operated by National Technology & Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA0003525. This paper describes objective technical results and analysis. Any subjective views or opinions that might be expressed in the paper do not necessarily represent the views of the U.S. Department of Energy or the United States Government.

Modeling the performance of perovskite solar cells with inserting porous insulating alumina nanoplates

Peng et al. [Science 379 683 (2023)] reported an effective method to improve the performance of perovskite solar cells by using thicker porous insulator contact (PIC)-alumina nanoplates. This method overcomes the trade-off between the open-circuit voltage and the fill factor through two mechanisms: reduced surface recombination velocity and increased bulk recombination lifetime due to better perovskite crystallinity. From arguments of drift-diffusion simulations, we find that an increase in mobility and carrier recombination lifetime in bulk are the key factors for minimizing the resistance-effect from thicker PICs and achieving a maximum power conversion efficiency (PCE) at approximately 25% reduced contact area. Furthermore, the partially replacement of perovskite films with thicker PICs would result in a reduction in short-current density, but the relative low refractive index of the PICs imbedded into the high refractive index perovskite creates light trapping structures that compensate for this loss.

Fluid effects in model granular flows

Pore fluid plays a crucial role in many granular flows, especially those in geophysical settings. However, the transition in behaviour between dry flows and fully saturated flows and the underlying physics that relate to this are poorly understood. In this paper, we report the results of small-scale flume experiments using monodisperse granular particles with varying water content and volume in which the basal pore pressure, total pressure, flow height and velocity profile were measured at a section. We compare the results with theoretical profiles for granular flow and with flow regimes based on dimensional analysis. The runout and the centre of mass were also calculated from the deposit surface profiles. As the initial water content by mass was increased from zero to around 10%, we first observed a drop in mobility by approximately 50%, as surface tension caused cohesive behaviour due to matric suction. As the water content was further increased up to 45%, the mobility also increased dramatically, with increased flow velocity up to 50%, increased runout distance up to 240% and reduced travel angle by up to 10° compared to the dry case. These effects can be directly related to the basal pore pressure, with both negative pressures and positive pore pressures being measured relative to atmospheric during the unsteady flow. We find that the initial flow volume plays a role in the development of relative pore pressure, such that, at a fixed relative water content, larger flows exhibit greater positive pore pressures, greater velocities and greater relative runout distances. This aligns with many other granular experiments and field observations. Our findings suggest that the fundamental role of the pore fluid is to reduce frictional contact forces between grains thus increasing flow velocity and bulk mobility. While this can occur by the development of excess pore pressure, it can also occur where the positive pore pressure is not in excess of hydrostatic, as shown here, since buoyancy and lubrication alone will reduce frictional forces.Graphical abstract

Unveiling Local Optical Properties Using Nanoimaging Phase Mapping in High-Index Topological Insulator Bi2Se3 Resonant Nanostructures.

Topological insulators are materials characterized by an insulating bulk and high mobility topologically protected surface states, making them promising candidates for future optoelectronic and quantum devices. Although their electronic properties have been extensively studied, their mid-infrared (MIR) properties and prospective photonic capabilities have not been fully uncovered. Here, we use a combination of far-field and near-field nanoscale imaging and spectroscopy to study chemical vapor deposition-grown Bi2Se3 nanobeams (NBs). We extract the MIR optical constants of Bi2Se3, revealing refractive index values as high as n ∼ 6.4, and demonstrate that the NBs support Mie resonances across the MIR. Local near-field reflection phase mapping reveals domains of various phase shifts, providing information on the local optical properties of the NBs. We experimentally measure up to 2π phase-shift across the resonance, in excellent agreement with finite-difference time-domain simulations. This work highlights the potential of Bi2Se3 for quantum circuitry, nonlinear generation, high-Q metaphotonics, and photodetection.

Understanding the Transition from High-Selective to High-Efficient Chiral Separations by Changing the Organic Modifier with Zwitterionic-Teicoplanin Chiral Stationary Phase.

The retention behavior of small molecules and N-protected amino acids on a zwitterionic teicoplanin chiral stationary phase (CSP), prepared on superficially porous particles (SPPs) of 2.0 μm particle diameter, has shown that efficiency and enantioselectivity, and so enantioresolution, dramatically change depending on the employed organic modifier. In particular, it was found that while methanol permits the boost of enantioselectivity and resolution of the amino acids, at the cost of efficiency, acetonitrile allows for the ability to reach extraordinary efficiency even at high flow rates (with reduced plate height <2 and up to 300,000 plates/m at the optimum flow rate). To understand these features, an approach based on the investigation of mass transfer through the CSP, the estimation of the binding constants of amino acids on the CSP, and the assessment of compositional properties of the interfacial region between bulk mobile phase and solid surface has been adopted.

Breakdown Characteristics of Ga2O3-on-SiC Metal-Oxide-Semiconductor Field-Effect Transistors

Ultra-wide bandgap semiconductor gallium oxide (Ga2O3) features a breakdown strength of 8 MV/cm and bulk mobility of up to 300 cm2V−1s−1, which is considered a promising candidate for next-generation power devices. However, its low thermal conductivity is reckoned to be a severe issue in the thermal management of high-power devices. The epitaxial integration of gallium oxide thin films on silicon carbide (SiC) substrates is a possible solution for tackling the cooling problems, yet premature breakdown at the Ga2O3/SiC interface would be introduced due to the relatively low breakdown strength of SiC (3.2 MV/cm). In this paper, the on-state properties as well as the breakdown characteristics of the Ga2O3-on-SiC metal-oxide-semiconductor field-effect transistor (MOSFET) were investigated by using the technology computer-aided design (TCAD) approach. Compared with the full-Ga2O3 MOSFET, the lattice temperature of the Ga2O3-on-SiC MOSFET was decreased by nearly 100 °C thanks to the high thermal conductivity of SiC. However, a breakdown voltage degradation of &gt;40% was found in an unoptimized Ga2O3-on-SiC MOSFET. Furthermore, by optimizing the device structure, the breakdown voltage degradation of the Ga2O3-on-SiC MOSFET is significantly relieved. As a result, this work demonstrates the existence of premature breakdown in the Ga2O3-on-SiC MOSFET and provides feasible approaches to further enhance the performance of hetero-integrated Ga2O3 power devices.

Field-effect bulk mobilities in polymer semiconductor films measured by sourcemeters.

Semiconducting polymers inherently exhibit polydispersity in terms of molecular structure and microscopic morphology, which often results in a broad distribution of energy levels for localized electronic states. Therefore, the bulk charge mobility strongly depends on the free charge density. In this study, we propose a method to measure the charge-density-dependent bulk mobility of conjugated polymer films with widely spread localized states using a conventional field-effect transistor configuration. The gate-induced variation of bulk charge density typically ranges within ±1018cm-3; however, this range depends significantly on the energetic dispersion width of localized states. The field-effect bulk mobility and field-effect mobility near the semiconductor-dielectric interface along with their dependence on charge density can be simultaneously extracted from the transistor characteristics using various gate voltage ranges.

Temperature Dependent Mobility Model for Predictive TCAD Simulations of 4H-SiC

We present a calibrated bulk mobility model for 4H-SiC. Hall measurements are performed on 4H-SiC samples to determine the bulk mobility/resistivity in the temperature range of 200-500K. We observe that temperature dependence of bulk resistivity cannot be predicted by popular mobility models available within TCAD tools. A careful investigation reveals that these popular mobility models need to be revised and replaced by a comprehensive model that can describe the impurity scattering effects dominant at low temperatures. We present a well calibrated bulk mobility model for 4H-SiC exhibiting excellent agreement with measured data, making it suitable for device simulation purposes using TCAD tools.

Surface-Localized 15R Formation on 4H-SiC (0001) Si-Face by Laser Annealing for Power N-Type MOSFETs

A SiC MOSFET fabricated on a thin 15R-SiC layer on top of a 4H-SiC would benefit from both the higher inversion channel mobility of 15R-SiC and higher bulk mobility of 4H-SiC. In this work, a method based on Al implantation followed by UV laser annealing (UV-LA) to form 15R-SiC on 4H is shown. Evaluation of crystal quality and SiC polytype identification are performed by Raman spectroscopy. We show that UV-LA is able to grow 15R-SiC and cure the crystal damaged by ion implantation until a level close to the pristine substrate. This opens new perspectives for fabrication of SiC n-type MOSFETs.

High-resolution discrimination of homologous and isomeric proteinogenic amino acids in nanopore sensors with ultrashort single-walled carbon nanotubes

The hollow and tubular structure of single-walled carbon nanotubes (SWCNTs) makes them ideal candidates for making nanopores. However, the heterogeneity of SWCNTs hinders the fabrication of robust and reproducible carbon-based nanopore sensors. Here we develop a modified density gradient ultracentrifugation approach to separate ultrashort (≈5-10 nm) SWCNTs with a narrow conductance range and construct high-resolution nanopore sensors with those tubes inserted in lipid bilayers. By conducting ionic current recordings and fluorescent imaging of Ca2+ flux through different nanopores, we prove that the ion mobilities in SWCNT nanopores are 3-5 times higher than the bulk mobility. Furthermore, we employ SWCNT nanopores to discriminate homologue or isomeric proteinogenic amino acids, which are challenging tasks for other nanopore sensors. These successes, coupled with the building of SWCNT nanopore arrays, may constitute a crucial part of the recently burgeoning protein sequencing technologies.

Absorption and escape kinetics of spherical biomolecules from fully porous particles utilized in size exclusion chromatography

The increasing demand for the characterization of large biomolecules such as monoclonal antibodies, double-stranded deoxyribonucleic acid (dsDNA), and virus-like particles (VLPs) is raising fundamental questions pertaining to their absorption (ingress) and escape (egress) kinetics from fully porous particles. The exact expression of their concentration profiles is derived as a function of time and radial position across a single sub-3 μm Bridge-Ethylene-Hybrid (BEHTM) Particle present in size exclusion chromatography (SEC) columns. The boundary condition at the external surface area of the particle is a rectangular concentration profile mimicking the passage of the chromatographic zone. Four different BEH Particles were considered in the calculations depending on the molecular size of the analyte: 2.0 μm 100 Å BEH Particles for small molecules, 2.0 μm 200 Å BEH Particles for monoclonal antibodies, 2.0 μm 300 Å BEH Particles for dsDNA (100 base pairs), and 2.5 μm 900 Å BEH Particles for virus-like particles (VLPs).The calculated concentration profiles of small molecules and monoclonal antibodies confirm that all BEH Particles present in the column reach quasi-instantaneously thermodynamic equilibrium with the bulk mobile phase during the passage of the chromatographic band. This is no longer the case for larger biomolecules such as dsDNA or VLPs, especially when the SEC particle is located near the column inlet and for high velocities. The kinetics of biomolecule egress is slower than its kinetics of ingress leading to pronounced peak tailing. The mean concentration of the largest biomolecules in the SEC particles remains always smaller than the maximum bulk concentration. This persistent and transient intra-particle diffusion regime has direct implications on the theoretical expressions of the observed retention factors and plate heights. Classical theories of chromatography assume uniform spatial distribution of the analyte in the particle volume: this hypothesis is not verified for the largest biomolecules. These results imply that non-porous particles or monolithic structures are the most promising stationary phases for the separation and purification of the largest biomolecules in life science.

Effect of grains and grain boundaries on concentrations and mobility of charge carriers in Ba3Ca1.18Nb1.82O9-δ

Perovskite-based protonic conductors are currently the most promising electrolytes in medium and low-temperature hydrogen energy devices. Herein, the Ba3Ca1.18Nb1.82O9-δ double perovskite oxide protonic conductor is prepared, and the influence of bulk and grain boundaries on transport properties is systematically investigated via defect chemistry. The Ba3Ca1.18Nb1.82O9-δ exhibits a hexagonal distortion, and the calculated standard molar hydration enthalpies of Ba3Ca1.18Nb1.82O9-δ, bulk, and grain boundaries are -138 kJ/mol, -131 kJ/mol, and -144 kJ/mol, respectively. The migration activation energies of protons, oxygen vacancies, and hole conduction in bulk Ba3Ca1.18Nb1.82O9-δ under oxygen are 0.29 eV, 1.51 eV, and 0.63 eV, respectively. The proton concentration in grains is slightly lower than in grain boundaries. In contrast, the proton mobility in bulk is three orders higher than in grain boundaries. The proton conduction of double perovskite oxide protonic conductor is dominant in Ar and reductive atmospheres at 500–800°C, where the conductivity (σh·) and holes transport number (th·) increase with oxygen partial pressure. Therefore, the conduction of Ba3Ca1.18Nb1.82O9-δ could be enhanced by improving carriers’ mobility in grain boundaries. The right grain boundaries block oxygen vacancies at low temperatures, increasing the predominance area diagrams for proton conduction. Hence, grain boundaries control the transport property of double perovskite oxide protonic conductor.

Schottky-Contact Formation between Metal Electrodes and Molecularly Doped Disordered Organic Semiconductors

We study using three-dimensional kinetic Monte Carlo (KMC) simulations to what extent the formation of Schottky contacts between a metal electrode and a molecularly doped disordered organic semiconductor can be understood from the theory for crystalline inorganic semiconductors, adapted to include the effects of the localized nature of the states in which the charge carriers reside and the hopping transport in between these states. The thickness of the Schottky-contact depletion region is found to be significantly smaller than as expected when the energetical disorder is neglected. The presence of energetic disorder is also found to influence the voltage dependence of the width of the depletion regions near the contacts of single-layer double-Schottky-contact devices. The voltage drop over the two depletion regions and the remaining charge-neutral bulk layer is shown to be described successfully by a semianalytical model, based on an accurately parameterized bulk mobility function of the dopant concentration, energetic disorder, and the electric field. We furthermore find that the mobility in the depletion regions is drastically reduced. As a result, the depletion-region formation process can be ultraslow, with a characteristic time scale ranging from microseconds to beyond milliseconds.

Elucidation of Enhanced Lithium Conductivity in Nanoporous Ionogel Using Solid State NMR

AbstractNanostructured solid composite electrolyte or nano‐SCE, which is composed of an ionic liquid, nanoporous silica, and residuals of immobilized precursor components, shows promising synergistic properties. The ionic conductivity of nano‐SCE is in the range of 2–5 mS cm−1, which exceeds the bulk ionic liquid conductivity at ambient temperature, while maintaining characteristics of a solid electrolyte such as having no leakage issues as the ionic liquid is confined, and lower flammability compared to conventional liquid electrolytes. In this study, the underlying mechanism of enhanced conductivity is investigated by using magic angle spinning NMR and NMR relaxometry analysis. Water, one of the volatile precursor molecules has shown to play a key role in the final conductivity and stability at the solid‐electrolyte interface, as it enhances the temperature range in which the ionic liquid remains mobile. In line with previous studies, water with lowered mobility is found in the silicon matrix. The activation energies of lithium ion transfer probed by NMR relaxometry, however, do not change as function of water content. The increase in bulk mobility of lithium ions under ambient conditions compared to water‐less nano‐SCE is found to be the origin of the altered conductivity of this material.