Copper nanowires (CuNWs) possess key characteristics for realizing flexible transparent electronics. High-quality CuNW micropatterns with high resolution and uniform thickness are required to realize integrated transparent electronic devices. However, patterning high-aspect-ratio CuNWs is challenging because of their long length, exceeding the target pattern dimension. This work reports a novel reverse-offset printing technology that enables the sub-10 μm high-resolution micropatterning of CuNW transparent conducting electrodes (TCEs). The CuNW ink for reverse-offset printing was formulated to control viscoelasticity, cohesive force, and adhesion by adjusting the ligands, solvents, surface energy modifiers, and leveling additives. An inexpensive commercial adhesive handroller achieved a simple, fast, and scalable micropatterning of CuNW TCEs. Easy production of high-quality CuNW micropatterns with various curvatures and shapes was possible, regardless of the printing direction. The reverse-offset-printed CuNW micropatterns exhibited a minimum of 7 μm line width and excellent pattern qualities such as fine line spacing, sharp edge definition, and outstanding pattern uniformity. In addition, they exhibited excellent sheet resistance, high optical transparency, outstanding mechanical durability, and long-term stability. Flexible light-emitting diode (LED) circuits, transparent heaters, and organic LEDs (OLEDs) can be fabricated using high-resolution reverse-offset-printed CuNW micropatterns for applications in flexible transparent electronic devices.
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