Μm Pixel Research Articles

Resolving soft X-ray photons with a high-rate hybrid pixel detector

Due to their high frame rates and dynamic range, large area coverage, and high signal-to-noise ratio, hybrid silicon pixel detectors are an established standard for photon science applications at X-ray energies between 2 keV and 20 keV. These properties also make hybrid detectors interesting for experiments with soft X-rays between 200 eV and 2 keV. In this energy range, however, standard hybrid detectors are limited by the quantum efficiency of the sensor and the noise of the readout electronics. These limitations can be overcome by utilizing inverse Low-Gain Avalanche Diode (iLGAD) sensors with an optimized X-ray entrance window. We have developed and characterized a prototype soft X-ray iLGAD sensor bonded to the charge integrating 75 µm pixel JUNGFRAU chip. Cooled to −22°C, the system multiplication factor of the signal generated by an impinging photon is ≥ 11. With this gain, the effective equivalent noise charge of the system is ≤5.5 electrons root-mean-square at a 5 µs integration time. We show that by cooling the system below −50°C, single photon resolution at 200 eV becomes feasible with a signal-to-noise ratio better than 5.

High crosstalk suppression in InGaAs/InP single-photon avalanche diode arrays by carrier extraction structure

Crosstalk has become an urgent issue for single-photon avalanche diode arrays. In previous work, trenches were introduced between pixels to block the crosstalk optical path in planar InGaAs/InP single-photon avalanche diode arrays, since the optical crosstalk was considered as the main crosstalk mechanism. However, the crosstalk suppression effect of this solution is not satisfactory. Here, we demonstrate a carrier extraction structure to efficiently reduce crosstalk by electrically guiding photogenerated crosstalk holes in the non-pixel region to the surface, since we find that the optical-electrical crosstalk is the dominant crosstalk mechanism. Experimental measurements show that a narrow carrier extraction structure makes a 91.52% (96.22%) crosstalk reduction between the nearest neighbor pixels in arrays with 100 (50) μm pixel pitch, and it does not cause any etching damage. These results reveal the primary source of crosstalk in InGaAs/InP single-photon avalanche diode arrays and provide a practical route to fabricate low-crosstalk, high-pixel-density arrays for use in high-resolution three-dimensional imaging and quantum technologies.

Mid-wavelength infrared focal plane array based on type II InAs/GaSb superlattices on InP substrate

We report the growth and characterization of band gap engineered mid-wavelength infrared photodiode, pBiBn, based on type-II InAs/GaSb superlattices on InP substrate. InP substrates are attractive material because they have high transmittance in the mid-wavelength infrared region and near thermal expansion coefficient to Si read-out IC (ROIC). Misfit dislocations due to lattice mismatch between GaSb and InP were successfully suppressed by thick GaSb buffer layer and two step growth of it. The photoluminescence (PL) spectrum from the absorption layers exhibits a peak wavelength of 5.01 μm at 77 K. The distinct PL peak was observed even at 120 K, indicating the excellent crystalline quality of T2SLs grown on an InP substrate. The dark current densities of 292 × 10−6 A/cm2 at 77 K and cut off wavelength of 5.15 μm at 80 K were measured, respectively. A clear image was obtained by fabricated focal plane array of 640 × 512 pixels with 15 μm pixel pitch, and NEDT and defective pixel rate was 50 mK and less than 1 % at 100 K, respectively.

THE RELATIONSHIP BETWEEN MICROSTRUCTURE AND MECHANICAL RESPONSE IN THE HUMAN MENISCUS

To characterize the microstructural organization of collagen fibers in human medial menisci and the response to mechanical loading in relation to age. We combine high resolution imaging with mechanical compression to visualize the altered response of the tissue at the microscale. Menisci distribute the load in the knee and are predominantly composed of water and specifically hierarchically arranged collagen fibers. Structural and compositional changes are known to occur in the meniscus during aging and development of osteoarthritis. However, how microstructural changes due to degeneration affect mechanical performance is still largely unknown [1].Fresh frozen 4 mm Ø plugs of human medial menisci (n=15, men, 20-85 years) with no macroscopic damage nor known diseases from the MENIX biobank at Skåne University Hospital were imaged by phase contrast synchrotron tomography at the TOMCAT beamline (Paul Scherrer Institute, CH). A rheometer was implemented into the beamline to perform in-situ stress relaxation (2 steps 15% and 30% strain) during imaging (21 keV, 2.75μm pixel size). 40s scans were acquired before and after loading, while 14 fast tomographs (5s acquisitions) were taken during relaxation. The fiber 3D orientations and structural changes during loading were determined using a structure tensor approach (adapting a script from [1]). The 3D collagen fiber orientation in menisci revealed alternating layers of fibers. Two main areas are shown: surfaces and bulk. The surface layers are a mesh of randomly oriented fibers. Within the bulk 2-3 layers of fibers are visible that alternate about 30° to each other. Structural degeneration with age is visible and is currently being quantified. During stress-relaxation all menisci show a similar behavior, with samples from older donors being characterized by larger standard deviation Furthermore, the behavior of the different layers of fibers is tracked during relaxation showing how fibers with different orientation respond to the applied loading.Acknowledgments: We thank PSI for the beamtime at the TOMCAT beamline X02DA, and funding from Swedish Research Council (2019-00953), under the frame of ERA PerMed, and the Novo Nordisk Foundation through MathKOA (NNF21OC0065373).

Serial powering characterisation for the CMS Inner Tracker at the High Luminosity LHC

The CMS tracking system will be completely replaced in order to operate in the extreme conditions of the High Luminosity LHC. The new tracker will consist of two main subdetectors: the Inner Tracker, containing pixel modules, and the Outer Tracker, consisting of strip and macro-pixel modules. In the Inner Tracker, silicon sensors will be read out by the CMS Readout Chip (CROC). The chip, built in 65 nm CMOS technology, is able to withstand high radiation doses (500 Mrad) and hit rates (3 GHz/cm2 on the innermost tracking layer) during operation. Moreover, it must handle a fine sensor granularity (2500 µm2 pixels) and operate at low detection thresholds (1000 e-). The Inner Tracker will make use of the serial powering scheme to provide the ∼60 kW required by ∼4000 modular units. The Shunt-LDO (SLDO) regulator is the part of the CROC responsible for providing the power by draining a constant current in time, independently of the chip power consumption. Tests performed with Single Chip Cards (SCC) in serial configurations are reported in this paper.

Evaluation of a Large Area, 83 μm Pixel Pitch Amorphous Selenium Indirect Flat Panel Detector.

Dual-layer detectors provide a low-cost solution to improved material decomposition and lesion differentiation in X-ray imaging, while eliminating motion artifacts from multiple exposures. Most designs utilize two indirect detectors with scintillators designed for low-energy and higher-energy detection and separated by a copper filter to harden the beam for high energy detection. To improve the performance of the bottom detector and lower dose requirements, we have previously proposed an alloyed amorphous selenium photodetector to achieve improved resolution and absorption at green wavelengths, better suited to high-performance scintillators such as CsI:Tl. In this work, we demonstrate a baseline prototype for the bottom layer-a continuous, large area 83 μm pixel pitch flat panel indirect detector with well-established amorphous selenium as the photodetector-and verify the architecture's performance and detector design. We characterize lag, noise-power spectrum, detective quantum efficiency, and modular transfer function of the detector, and show resolution up to 6 lp/mm when operated at an applied bias of 150 V. This provides a starting point for evaluating the alloyed selenium materials, and shows promise for this detector in the future dual-layer design.

Balancing gain and dynamic range in a 25 µm pitch hybrid pixel detector

MÖNCH is a hybrid pixel detector featuring 25 µm pixel pitch and analogue readout for X-ray imaging at synchrotron radiation (SR) facilities. Sub-pixel spatial resolution has been demonstrated using charge sharing and interpolation algorithms. The current prototype version, MÖNCH0.4, features 19 different pixel architectures to assess the design choices and components for an optimised architecture to be used at SR facilities, and to explore the potential use of dynamic gain switching in fine pitch pixels for applications at X-ray free electron lasers (XFELs).Previous characterisation results of the pixel architectures without dynamic gain switching have shown noise levels as low as 21.7 e- r.m.s., which have now been pushed to sub-20 e- r.m.s at room temperature using standard 300 µm-thick silicon sensors. Achieving low noise values however requires high conversion gain and necessitates design choices such as the simplification of the pixel architecture (e.g. by limiting the available choice of in-pixel gains). These compromises ultimately restrain the available dynamic range and prevent the use of MÖNCH with low-gain avalanche diodes (LGADs) or high-Z sensors because of the large signals (internal amplification and high photon energies, respectively) and of large leakage currents.In this paper, we will introduce the MÖNCH project followed by a description of the current prototype along with characterisation results of the pixel architectures without dynamic gain switching for synchrotron applications with an emphasis on noise and dynamic range. These experimental results will be used to fine-tune the design of MÖNCH0.5 to validate the final pixel design. This small prototype should also include additional features from the continuous developments of the PSD detector group towards a full-scale 2 × 3 cm2 MÖNCH1.0.

Enhancing spatial resolution in MÖNCH for electron microscopy via deep learning

Hybrid Pixel Detectors (HPDs) are highly suitable in diffraction-based electron microscopy due to their high frame rates (> 1 kHz), high dynamic range, and good radiation hardness. However, their use in imaging applications has been limited by their relatively large pixel size (≥ 55 μm) and high-energy (>80 keV) electrons scattering over multiple pixels in the sensor layer. To realize the full potential of fast, radiation-hard HPDs across electron microscopy modalities, we developed deep learning techniques to precisely localize the impact point of incident electrons in MÖNCH, a charge integrating HPD with 25 μm pixel size. With neural network models trained using labeled data via simulations and experimental measurements, the best spatial resolution obtained, defined in terms of the root mean squared error, was 0.60 pixels for 200 keV electrons, a three-fold improvement over a simple charge centroid method. This article presents the training sample generation, deep learning model design, training results, and imaging outcomes for a sample containing gold nanoparticles.

First operation of the JUNGFRAU detector in 16-memory cell mode at European XFEL

The JUNGFRAU detector is a well-established hybrid pixel detector developed at the Paul Scherrer Institut (PSI) designed for free-electron laser (FEL) applications. JUNGFRAU features a charge-integrating dynamic gain switching architecture, with three different gain stages and 75 μm pixel pitch. It is widely used at the European X-ray Free-Electron Laser (EuXFEL), a facility which produces high brilliance X-ray pulses at MHz repetition rate in the form of bursts repeating at 10 Hz. In nominal configuration, the detector utilizes only a single memory cell and supports data acquisition up to 2 kHz. This constrains the operation of the detector to a 10 Hz frame rate when combined with the pulsed train structure of the EuXFEL. When configured in so-called burst mode, the JUNGFRAU detector can acquire a series of images into sixteen memory cells at a maximum rate of around 150 kHz. This acquisition scheme is better suited for the time structure of the X-rays as well as the pump laser pulses at the EuXFEL. To ensure confidence in the use of the burst mode at EuXFEL, a wide range of measurements have been performed to characterize the detector, especially to validate the detector alibration procedures. In particular, by analyzing the detector response to varying photon intensity (so called ‘intensity scan’), special attention was given to the characterization of the transitions between gain stages. The detector was operated in both dynamic gain switching and fixed gain modes. Results of these measurements indicate difficulties in the characterization of the detector dynamic gain switching response while operated in burst mode, while no major issues have been found with fixed gain operation. Based on this outcome, fixed gain operation mode with all the memory cells was used during two experiments at EuXFEL, namely in serial femtosecond protein crystallography and Kossel lines measurements. The positive outcome of these two experiments validates the good results previously obtained, and opens the possibility for a wider usage of the detector in burst operation mode, although compromises are needed on the dynamic range.

A 0.5 MP, 3D-Stacked, Voltage-Domain Global Shutter Image Sensor with NIR QE Enhancement, Event Detection Modes, and 90 dB Dynamic Range

We introduce a compact voltage-domain global shutter CMOS image sensor for a wide range of applications including consumer, IoT, and industrial applications. With 0.5 MP and 2.79 µm pixels packed in a die size of only 2.3 mm × 2.8 mm, the sensor achieves more than 92% quantum efficiency (QE) in the visible wavelength and more than 36% at near-infrared (940 nm) all while drawing a mere 20 mW at a 10-bit, 30-frame-per-second operational mode. In this article, we focus on the architecture of the sensor and the design challenges encountered to fit all the necessary circuitry in such a limited footprint. Moreover, we detail the new solutions we have developed to meet the demanding specifications of low-power operation and high dynamic range (HDR).

Quasi-3D harnessing of visible light in emissive III-V on Si microstructures: Application to multiple-quantum-well color conversion layers

We report on the design, fabrication, and characterization of the first photonic crystal (PhC)-based red multiple-quantum-well (MQW) color converters fully optimized for augmented reality (AR) microdisplays through a quasi-3D light harnessing principle. This principle leverages an aluminum (Al) bottom reflector and a silicon dioxide (SiO2) gap to harness the bottom-emitted light, along with copper (Cu) lateral mirrors and a silicon nitride (SiN) phase-matcher for Bloch-mode replication. These structures were designed using 3D-FDTD simulations. As a proof-of-principle, we fabricated corresponding devices that exhibit promising characteristics, including record light extraction efficiencies over 40 % for 4 μm pixels and directional emission patterns. Time-resolved photoluminescence (TRPL) analyses, along with a four-wave intensity model developed in this work, indicate that there is still room for improvement. We believe that the guidelines established in this study could pave the way for the use of MQW color converters in the next generation of very bright, high-resolution RGB microdisplays for AR glasses and beyond.

A low noise CMOS camera system for 2D resonant inelastic soft X-ray scattering

Resonant Inelastic X-ray Scattering (RIXS) is a powerful spectroscopic technique to study quantum properties of materials in the bulk. A novel variant of RIXS, called 2D RIXS, enables concurrent measurement of the scattered X-ray spectrum for a wide range of input energies, improving on the typically low throughput of 1D RIXS. In the soft X-ray domain, 2D RIXS demands an X-ray camera system with small pixels, large area, high quantum efficiency and low noise to limit the false detection rate in long duration exposures. We designed and implemented a 7.5 Megapixel back-illuminated CMOS detector with 5 μm pixels and high quantum efficiency in the 200–1,000 eV X-ray energy range for the QERLIN 2D RIXS spectrometer at the Advanced Light Source. The QERLIN beamline and detector are currently in commissioning. The camera noise from in-situ 3 s long dark exposures is 7e− or less and the leakage current is 6.5 × 10−3 e−/(pixel ∙ s). For individual 500 eV X-rays, the expected efficiency is greater than 75% and the false detection rate is ∼1 × 10−5 per pixel.

Design and Characterization of 5 μm Pitch InGaAs Photodiodes Using In Situ Doping and Shallow Mesa Architecture for SWIR Sensing.

This paper presents the complete design, fabrication, and characterization of a shallow-mesa photodiode for short-wave infra-red (SWIR) sensing. We characterized and demonstrated photodiodes collecting 1.55 μm photons with a pixel pitch as small as 3 μm. For a 5 μm pixel pitch photodiode, we measured the external quantum efficiency reaching as high as 54%. With substrate removal and an ideal anti-reflective coating, we estimated the internal quantum efficiency as achieving 77% at 1.55 μm. The best measured dark current density reached 5 nA/cm2 at -0.1 V and at 23 °C. The main contributors responsible for this dark current were investigated through the study of its evolution with temperature. We also highlight the importance of passivation with a perimetric contribution analysis and the correlation between MIS capacitance characterization and dark current performance.

Laser fabrication of lead selenide infrared focal plane array devices

The motivation of this work is to demonstrate the versatility and potential of laser processing in the fabrication of PbSe thin films and focal plane array devices. This work fabricates an FPA device with any need for the suite of equipment and chemicals necessary for photolithography and etching. Advances in laser technologies and the vast number of laser parameters available are enabling the huge potential for laser processing of thin films and device fabrication. This can be accomplished faster using lasers with fewer steps than using conventional thin film deposition and photolithography methods. This work presents the fabrication and simple operation of a proof-of-concept PbSe-based, 120-pixel PFA (10 × 12 pixel) focal plane array using only laser processing for film deposition and device patterning. Lasers were used to both deposition and pattern a PbSe film with 60 × 70 µm pixels with 100 µm pitch with a unit cell photoresponse of 17% DelR. Additional results, challenges, limitations, and suggested future improvements are presented.

A 3.0 µm Pixels and 1.5 µm Pixels Combined Complementary Metal-Oxide Semiconductor Image Sensor for High Dynamic Range Vision beyond 106 dB.

We propose a new concept image sensor suitable for viewing and sensing applications. This is a report of a CMOS image sensor with a pixel architecture consisting of a 1.5 μm pixel with four-floating-diffusions-shared pixel structures and a 3.0 μm pixel with an in-pixel capacitor. These pixels are four small quadrate pixels and one big square pixel, also called quadrate-square pixels. They are arranged in a staggered pitch array. The 1.5 μm pixel pitch allows for a resolution high enough to recognize distant road signs. The 3 μm pixel with intra-pixel capacitance provides two types of signal outputs: a low-noise signal with high conversion efficiency and a highly saturated signal output, resulting in a high dynamic range (HDR). Two types of signals with long exposure times are read out from the vertical pixel, and four types of signals are read out from the horizontal pixel. In addition, two signals with short exposure times are read out again from the square pixel. A total of eight different signals are read out. This allows two rows to be read out simultaneously while reducing motion blur. This architecture achieves both an HDR of 106 dB and LED flicker mitigation (LFM), as well as being motion-artifact-free and motion-blur-less. As a result, moving subjects can be accurately recognized and detected with good color reproducibility in any lighting environment. This allows a single sensor to deliver the performance required for viewing and sensing applications.

Evaluation of planar silicon pixel sensors with the RD53A readout chip for the Phase-2 Upgrade of the CMS Inner Tracker

The Large Hadron Collider at CERN will undergo an upgrade in order to increase its luminosity to 7.5 × 1034 cm-2s-1. The increased luminosity during this High-Luminosity running phase, starting around 2029, means a higher rate of proton-proton interactions, hence a larger ionizing dose and particle fluence for the detectors. The current tracking system of the CMS experiment will be fully replaced in order to cope with the new operating conditions. Prototype planar pixel sensors for the CMS Inner Tracker with square 50 μm × 50 μm and rectangular 100 μm × 25 μm pixels read out by the RD53A chip were characterized in the lab and at the DESY-II testbeam facility in order to identify designs that meet the requirements of CMS during the High-Luminosity running phase. A spatial resolution of approximately 3.4 μm (2 μm) is obtained using the modules with 50 μm × 50 μm (100 μm × 25 μm) pixels at the optimal angle of incidence before irradiation. After irradiation to a 1 MeV neutron equivalent fluence of Φeq = 5.3 × 1015 cm-2, a resolution of 9.4 μm is achieved at a bias voltage of 800 V using a module with 50 μm × 50 μm pixel size. All modules retain a hit efficiency in excess of 99% after irradiation to fluences up to 2.1 × 1016 cm-2. Further studies of the electrical properties of the modules, especially crosstalk, are also presented in this paper.

CNR performance of semiconductor materials for X-ray imaging of breast calcifications

We present the results of a GAMOS/GEANT4 computer simulation of a standard X-ray mammography system, which consists of a Tungsten 28 kVp polychromatic X-ray source with a 50 μm Rh filter, a mammography phantom with Al2O3 spherical specks of different diameters, and a generic pixel detector (55 μm × 55 μm pixel size) with different types of semiconductor sensors. The number of photons simulated is calibrated to produce similar entrance surface dose (ESD) as the one used by a standard clinical mammography screening. Estimates of Contrast to Noise Ratio (CNR) as a function of ESD, sensor thickness and microcalcification diameter are presented for four different sensor materials: Silicon (Si), Cadmium Telluride (CdTe), Gallium Arsenide (GaAs) and Perovskite (MAPbI3). For the X-ray energy spectrum and pixel size considered, and an ESD dose of 4 mGy, our study shows that, with the exception of Si, these sensors, as thin as 200 μm, are able to resolve (with at least 3 standard deviations above background) Al2O3 spherical specks up to a minimum diameter of 180 μm, having statistically compatible CNR performance. The increase in substrate thickness has a substantial improvement in the CNR values provided by the Si sensor, while for the other cases the enhancement of CNR is marginal and consistent with statistical uncertainties with the thinnest case considered.

A Thin-Film Pinned-Photodiode Imager Pixel with Fully Monolithic Fabrication and beyond 1Me- Full Well Capacity.

Thin-film photodiodes (TFPD) monolithically integrated on the Si Read-Out Integrated Circuitry (ROIC) are promising imaging platforms when beyond-silicon optoelectronic properties are required. Although TFPD device performance has improved significantly, the pixel development has been limited in terms of noise characteristics compared to the Si-based image sensors. Here, a thin-film-based pinned photodiode (TF-PPD) structure is presented, showing reduced kTC noise and dark current, accompanied with a high conversion gain (CG). Indium-gallium-zinc oxide (IGZO) thin-film transistors and quantum dot photodiodes are integrated sequentially on the Si ROIC in a fully monolithic scheme with the introduction of photogate (PG) to achieve PPD operation. This PG brings not only a low noise performance, but also a high full well capacity (FWC) coming from the large capacitance of its metal-oxide-semiconductor (MOS). Hence, the FWC of the pixel is boosted up to 1.37 Me- with a 5 μm pixel pitch, which is 8.3 times larger than the FWC that the TFPD junction capacitor can store. This large FWC, along with the inherent low noise characteristics of the TF-PPD, leads to the three-digit dynamic range (DR) of 100.2 dB. Unlike a Si-based PG pixel, dark current contribution from the depleted semiconductor interfaces is limited, thanks to the wide energy band gap of the IGZO channel material used in this work. We expect that this novel 4 T pixel architecture can accelerate the deployment of monolithic TFPD imaging technology, as it has worked for CMOS Image sensors (CIS).

VeryFastCCD: a high frame rate soft X-ray detector

Direct X-ray detection in silicon has been transformative for scattering experiments in biology and materials science. While bump-bonded hybrid pixels have been attractive for hard X-ray detection, the challenge for single photon soft X-ray detection is sufficiently low noise. CCD structures on thick, high-resistivity silicon have been successfully used as sensors over the range of soft to hard X-rays at storage rings and FELs. The VeryFastCCD is a high frame rate, column-parallel CCD sensor with 48 μm pixels. Combined with 256-channel custom readout ASICs, frame rates of 5–10 kHz have been achieved with readout noise as low as 20 e and full-well capacity >4 × 105 e/pixel. Thin (10 nm and 100 nm) entrance window contact processes have also been developed which provide >85% quantum efficiency for 285 eV X-rays. Systems are currently being developed for several beamlines at the upgraded Advanced Light Source.

Cellular migration into a subretinal honeycomb-shaped prosthesis for high-resolution prosthetic vision

In patients blinded by geographic atrophy, a subretinal photovoltaic implant with 100 µm pixels provided visual acuity closely matching the pixel pitch. However, such flat bipolar pixels cannot be scaled below 75 µm, limiting the attainable visual acuity. This limitation can be overcome by shaping the electric field with 3-dimensional (3-D) electrodes. In particular, elevating the return electrode on top of the honeycomb-shaped vertical walls surrounding each pixel extends the electric field vertically and decouples its penetration into tissue from the pixel width. This approach relies on migration of the retinal cells into the honeycomb wells. Here, we demonstrate that majority of the inner retinal neurons migrate into the 25 µm deep wells, leaving the third-order neurons, such as amacrine and ganglion cells, outside. This enables selective stimulation of the second-order neurons inside the wells, thus preserving the intraretinal signal processing in prosthetic vision. Comparable glial response to that with flat implants suggests that migration and separation of the retinal cells by the walls does not cause additional stress. Furthermore, retinal migration into the honeycombs does not negatively affect its electrical excitability, while grating acuity matches the pixel pitch down to 40 μm and reaches the 27 μm limit of natural resolution in rats with 20 μm pixels. These findings pave the way for 3-D subretinal prostheses with pixel sizes of cellular dimensions.